Formosa FM160-MS Smd schottky barrier rectifier Datasheet

SMD Schottky Barrier Rectifier
FM120-MS THRU FM1200-MS
Formosa MS
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
SMD Schottky Barrier Rectifier
Formosa MS
FM120-MS THRU FM1200-MS
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Package outline
Features
• Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
•
•
•
SOD-123S
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Tiny plastic SMD package.
Low power loss, high efficiency.
High current capability, l ow forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. FM120-ΜS-H.
0.154(3.9)
0.138(3.5)
0.044(1.1)
0.018(0.45) Typ.
0.079(2.0)
0.063(1.6)
0.028(0.7)
0.119(3.0)
0.103(2.6)
0.009(0.22)
0.007(0.18)
0.040(1.00)
0.036(0.90)
Mechanical data
0.032 (0.8) Typ.
0.032(0.8) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123S/MINI SMA
• Terminals :Plated terminals, solderable per MIL-STD-750,
Dimensions in inches and (millimeters)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.0155 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
Symbol
MIN.
TYP.
O
V R = V RRM T J = 100 C
Junction to ambient
Thermal resistance
1.0
A
I FSM
30
A
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
Storage temperature
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
FM120-MS
20
14
20
FM130-MS
30
21
30
FM140-MS
40
28
40
FM150-MS
50
35
50
*4
VF
(V)
Operating
temperature
T J, ( OC)
0.50
-55 to +125
84
42
CJ
120
O
C/W
O
C/W
pF
O
+175
-65
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.70
FM160-MS
60
42
60
FM180-MS
80
56
80
FM1100-MS
100
70
100
FM1150-MS
150
105
150
0.90
FM1200-MS
200
140
200
0.92
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mA
10
R θJC
T STG
SYMBOLS
0.5
IR
R θJA
Junction to case
UNIT
IO
O
V R = V RRM T J = 25 C
Reverse current
MAX.
0.85
*3 Continuous reverse voltage
-55 to +150
Page 2
*4 Maximum forward voltage@I F=1.0A
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
Rating and characteristic curves (FM120-MS THRU FM1200-MS)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
1.0
100
120
140
160
180
200
PEAK FORWARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0V
V
00
~2
1.0
0
15
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
8.3ms Single Half
TJ=25 C
Sine Wave
.01
JEDEC method
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
20V~40V
50V~200V
NUMBER OF CYCLES AT 60Hz
10
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
JUNCTION CAPACITANCE,(pF)
V
MS
80
LEAD TEMPERATURE,(°C)
00
0-
60
~1
20
40
~4
M1
S
20
0V
~F
-M
0
3.0
80
MS
40
0
20
01
FM
S~
0.2
~6
15
-M
0.4
10
50
FM
20
0.6
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
1
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
1.2
300
250
200
150
100
TJ=100°C
1.0
0.1
TJ=25°C
0.01
50
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Page 3
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
SMD Schottky Barrier Rectifier
FM120-MS THRU FM1200-MS
Formosa MS
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
FM120-MS
FM130-MS
FM140-MS
FM150-MS
FM160-MS
FM180-MS
FM1100-MS
FM1150-MS
FM1200-MS
12
13
14
15
16
18
10
115
120
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SOD-123S
0.044 (1.10)
0.040 (1.00)
0.079 (2.00)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
SMD Schottky Barrier Rectifier
Formosa MS
FM120-MS THRU FM1200-MS
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOD-123S
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
SMD Schottky Barrier Rectifier
FM120-MS THRU FM1200-MS
Formosa MS
Reel packing
PACKAGE
SOD-123S
REEL SIZE
7"
COMPONENT
SPACING
REEL
(pcs)
(m/m)
4.0
3,000
BOX
(pcs)
30,000
INNER
BOX
REEL
DIA,
CARTON
SIZE
CARTON
APPROX.
GROSS WEIGHT
(m/m)
(m/m)
(m/m)
(pcs)
(kg)
183*123*183
178
382*257*387
240,000
9.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 6
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
SMD Schottky Barrier Rectifier
FM120-MS THRU FM1200-MS
Formosa MS
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=125 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
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MIL-STD-750D
METHOD-1031
O
Page 7
Document ID
Issued Date
Revised Date
DS-121664
2011/02/21
2011/11/29
Revision
C
Page.
7
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