WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SWITCHING DIODE • Low profile surface mounted application in order to FEATURES optimize board space. Low power loss, efficiency. • CMSD2004S type is high a silicon switching dual in series diode • High current capability, low forward voltage drop. manufactured bycapability. the epitaxial planar process, designed for • High surge for overvoltage protection. • Guardring applications requiring high voltage capability. Power dissipation Ultra high-speed switching. • Pb-Free package is available • Silicon epitaxial planar chip, metal silicon junction. RoHS product for packing code suffix ”G” • Lead-free parts meet environmental standards of SOD-123H SOT-323 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) HalogenMIL-STD-19500 free product for packing code suffix “H” /228 1 product forLevel packing1 code suffix "G" • RoHS Moisture Sensitivity 3 Halogen free product for packing code suffix "H" 2 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H MARKING : B6D , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Maximum Ratings @TAby =25℃ • Polarity : Indicated cathode band • Mounting Position : Any Parameter Symbol • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Limit 300 VRM Non-Repetitive Peak reverse voltage Unit V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VR DC Blocking Voltage Ratings at 25℃ ambient temperature unless otherwise specified. Single Repetitive phase half wave, 60Hz, resistive of inductive load. Peak Current IO For capacitive load, derate current by 20% Continuous Forward Current IF RATINGS 240 V 225 mA 225 mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 13 30 14 40 625 15 VRRM 12 20 50 16 60 18 80 10 100 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 ForwardDC Surge Current Maximum Blocking Voltagetp=1 s IFSM V DC 20 30 40 1.0 50 60 80 100 Peak Repetitive Forward Current Marking Code IFRM Maximum Recurrent Peak Reverse Voltage Forward Surge Current tp=1 μs IFSM 4.0 mA115 150 120 200 Volts 105 140 Volts A 150 200 Volts A Maximum Average Forward Rectified Current Power Dissipation IO Pd 250 1.0 mW Amp Peak Forwardtemperature Surge Current 8.3 ms single half sine-wave Junction TJ IFSM 150 30 ℃ Amp Storage temperature Typical Thermal Resistancerange (Note 2) TSTG R ΘJA 40 120 ℃ ℃/W superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage TemperatureCHARACTERISTICS Range ELECTRICAL -55~+150 -55 to +125 TSTG (Ta=25℃ CHARACTERISTICS Parameter Maximum Forward Voltage at 1.0A DC PF -55 to +150 unless otherwise specified) ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VFSymbol Maximum Average Reverse Current at @T A=25℃ IR V Test0.50 conditions 0.70 Min Max 0.85 0.5 (BR) IR= 100μA IR VR=240V 0.1 VF IF=100mA 1 Diode capacitance CD VR=0V,f=1MHz Reveres recovery time trr IF=IR=30mA,RL=100Ω Reverse breakdown voltage Rated DC Blocking Voltage NOTES: Reverse ℃ - 65 to +175 @T A=125℃ voltage leakage current 240 10 Unit 0.9 0.92 V Volts mAmp mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Forward voltage 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 V 5 pF 50 ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD2004SWTHRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Typical Characteristics optimize board space. 0.071(1.8) 0.056(1.4) (nA) 1 : UL94-V0 rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any 0.01 0.0 0.2 0.4 0.6 gram 0.8 • Weight : Approximated 0.011 FORWARD VOLTAGE VF Ta=100℃ 100 REVERSE CURRENT IR Mechanical data 0.012(0.3) Typ. Reverse Characteristics 1000 T= a 2 5℃ FORWARD CURRENT 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 10 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" T= a 1 00 ℃ • IF (mA) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Forward Characteristics for overvoltage protection. • Guardring 200 100 high-speed switching. • Ultra • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 10 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Ta=25℃ 1 Dimensions in inches and (millimeters) 1.0 0.1 0.1 1.2 1 (V) 10 250 100 REVERSE VOLTAGE VR (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Capacitance Characteristics Per Diode RATINGS Ta=25℃ Marking Code 12 20 13 30 VRMS 14 21 VDC 20 30 Maximum RMS Voltage Maximum DC Blocking Voltage 1 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Storage Temperature Range CHARACTERISTICS 4 8 16 VR Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 18 80 10 100 115 150 120 200 Volt 28 35 42 56 70 105 140 Volt 40 50 60 80 100 150 200 Volt 200 1.0 Am 150 30 Am 100 40 120 ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI SYMBOL FM120-MH FM130-MH FM140-MH 0 12 REVERSE VOLTAGE 16 60 50 TSTG Maximum Forward Voltage at 1.0A DC 15 50 -55 to +125 TJ Operating Temperature Range 14 40 250 POWER DISSIPATION IO Maximum Average Forward Rectified Current 0 f=1MHz PD VRRM CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage 0.1 Power Derating Curve FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH 300 (mW) 5 (V) VF @T A=125℃ IR 20 0.50 0 25 0.70 50 75 0.85 AMBIENT TEMPERATURE 0.5 Tj 100 (℃ ) 0.9 125 0.92 10 Volt mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .087(2.20) • Epoxy : UL94-V0 rated flame retardant .070(1.80) .054(1.35) .045(1.15) Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 .047(1.20) Maximum DC Blocking Voltage superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) .004(0.10)MAX. Operating Temperature Range 115 150 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts IFSM 30 Amp RΘJA 40 120 ℃/W -55 to +125 CHARACTERISTICS ℃ - 65 to +175 ℃ Maximum Average Reverse Current at @T A=25℃ IR .016(0.40) .008(0.20) @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF NOTES: PF -55 to +150 TSTG Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 100 Amp TJ Storage Temperature Range 80 1.0 CJ Typical Junction Capacitance (Note 1) 60 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave .010(0.25) 16 .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.50 0.70 0.85 0.9 0.92 0.5 10 Volts mAmp 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.