Diode Semiconductor Korea HER301G---HER308G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A GLASS PASSIVATED RECTIFIERS FEATURES Low cost Glass passivated junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohil,Isopropanop DO - 27 and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.041ounces,1.15grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 301G HER 302G HER 303G HER 304G HER 305G HER 306G HER 307G HER UNITS 308G Maximum recurrent peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V Maximum average forward rectified current 9.5mm lead length, @TA=75 IF(AV) 3.0 A Peak forward surge current IFSM 8.3ms single half-sine-wave superimposed on rated load 150.0 A 1.7 V @TJ=125 Maximum instantaneous forward voltage @3.0 A Maximum reverse current 200.0 @TA=25 at rated DC blocking voltage @TA=100 VF 1.0 1.3 10.0 IR A 150.0 Maximym reverse capacitance (Note1) trr 50 75 ns Typical junction capacitance (Note2) CJ 70 50 pF Typical thermal resistance (Note3) RθJA 30.0 TJ - 55---- +175 TSTG - 55---- + 175 Operating junction temperature range Storage temperature range ／Ｗ NOTE:1. Measured with IF=0.5A, I R=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V 3. Thermal resistance f rom junction to ambient. www.diode.kr HER301G---HER308G Diode Semiconductor Korea AVERAGE FORWARD CURRENT AMPERES FIG.1 --FORWARD DERATING CURVE 6 5 Single Phase Half Wave 60H Z Resistive or Inductive Load 4 3 2 1 0 0 25 50 75 100 125 150 175 AMBIENT TEMPER ATURE, 1000 100 T J=50 10 T J =50 1 T J=25 0.1 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.3--TYPECAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT AMPERES FIG.2 --TYPECAL REVERSE CHARACTERISTICS 8.3ms Single Half Sine-Wave (JEDE METHOD) 200 HER301G-HER305G 100 HER306G-HER308G 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 1000 50/100/200V 300/400V 10 600/800/1000V 1.0 TJ=50 PULSE WIDTH=300uS .1 .01 .2 0 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 300 AMPERES PEAK FORWARD SURGE CURRENT FIG.4--PEAK FORWARD SURGE CURRENT 100 200 HER301G-HER305G 100 60 40 HER306G-HER308G 20 10 6 4 2 1 .1 TJ =25 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr