JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD JC(T BC846W BC847W BC848W SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-323 1. BASE 2. EMITTER FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Value BC846W 80 BC847W 50 BC848W 30 BC846W 65 BC847W 45 BC848W 30 BC846W Unit V V 6 BC847W 6 BC848W 5 V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 150 mW RΘJA Thermal Resistance From Junction To Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ DEVICE MARKING BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F; BC847CW=1G; BC848AW=1J; BC848BW=1K: BC848CW=1L www.cj-elec.com 1 D,Sep,2014 A,Jun,2014 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage BC847W Collector-emitter breakdown voltage Test conditions BC846W VCBO IC= 10µA, IE=0 BC846W 65 VCEO IC= 10mA, IB=0 BC848W 45 IE= 1 µA, IC=0 6 ICBO VCB=30V 15 hFE VCE= 5V, IC= 10µA 150 BC847CW,BC848CW 270 BC846BW,847BW,848BW VCE= 5V, IC= 2mA BC847CW,BC848CW Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter VBE(on) Transition frequency fT Collector output capacitance Noise figure 220 200 450 420 800 IC=10mA, IB=0. 5mA 0.25 IC=100mA, IB= 5mA 0.6 IC=10mA, IB=0. 5mA 0.7 IC=100mA, IB= 5mA 0.9 VCE= 5V, IC= 2mA VCE= 5V, IC= 10mA VCE= 5 V, IC= 10mA f=100MHz 580 660 700 770 100 mV MHz 4.5 VCE=5V,Ic=0.2mA, NF f=1KHz,RS=2KΩ 10 BW=200Hz 4 2 V V VCB=10V,f=1MHz BC847CW,BC848CW www.cj-elec.com 110 Cob BC846AW,847AW,848AW BC846BW,847BW,848BW nA 90 BC846AW,847AW,848AW voltage V 5 BC846AW,847AW,848AW BC846BW,847BW,848BW V 6 VEBO BC848W DC current gain V 30 BC846W Collector Cutoff Current Max Unit 50 30 BC847W Typ 80 BC848W BC847W Emitter-base breakdown voltage Min pF dB A,Jun,2014 D,Sep,2014 Typical Characteristics Static Characteristic (mA) 10 COMMON EMITTER Ta=25℃ 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC 100 (mA) IC β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 500 β=20 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 10 COLLECTOR CURRENT VCE (V) 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 200 400 600 10 0.25 800 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ Cob 1 0.1 0.1 8 —— IC 10 12 125 150 (mA) Ta 150 100 50 0 1 REVERSE VOLTAGE www.cj-elec.com 6 PC 200 f=1MHz IE=0/IC=0 10 4 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta (℃ ) D,Sep,2014 A,Jun,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 4 D,Sep,2014 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 5 D,Sep,2014 A,Jun,2014