Apollo Electron MCR100-6 Sensitive gate silicon controlled rectifier Datasheet

CR100-8
Sensitive Gate Silicon Controlled Rectifiers
TO-92
Symbol
○
3. Anode
BVDRM = 600V
IT(RMS) = 1.0A
▼
○
1.Cathode
ITSM = 10A
2.Gate
1
○
2
3
Features
◆ Repetitive
Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 1.0 A )
◆ Low On-State Voltage (1.3V(Typ.))
◆
General Description
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as
small motor control, gate driver for large thyristor, sensing and detecting circuits.
This device may substitute for MCR100-6, MCR100-8 series.
Absolute Maximum Ratings
Symbol
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
sine wave,50 to 60Hz
600
V
IT(AV)
Average On-State Current
half sine wave : TC = 83 °C
0.5
A
IT(RMS)
R.M.S On-State Current
All Conduction Angle
1.0
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
10
A
I2t for Fusing
t = 8.3ms
0.415
A 2s
Forward Peak Gate Power Dissipation
TA = 25 °C, pulse width ≤ 1.0㎲
2
W
Forward Average Gate Power Dissipation
TA = 25 °C, t = 8.3ms
0.1
W
IFGM
Forward Peak Gate Current
TA = 25 °C, pulse width ≤ 1.0㎲
1
A
VRGM
Reverse Peak Gate Voltage
TA = 25 °C, pulse width ≤ 1.0㎲
5.0
V
Operating Junction Temperature
- 40 ~ 110
°C
Storage Temperature
- 40 ~ 150
°C
I2 t
PGM
PG(AV)
TJ
TSTG
1/5
April, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
CR100-8
Electrical Characteristics
Symbol
( Tj = 25 °C unless otherwise noted )
Items
Ratings
Conditions
Min.
Typ.
Max.
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 110°C
─
─
─
─
10
100
VTM
Peak On-State Voltage (1)
( ITM = 1 A, Peak )
─
1.3
1.7
IGT
Gate Trigger Current (2)
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
dv/dt
Critical Rate of Rise Off-State
Voltage
di/dt
IH
Critical Rate of Rise On-State
Voltage
Holding Current
Unit
㎂
V
VAK = 12 V, RL=100 Ω
VD =12 V, RL=100 Ω
VAK = 12 V, RL=100 Ω
ITM = 2A ; Ig = 10mA
VAK = 12 V, Gate Open
Initiating Curent = 20mA
Tj = 125 °C
─
--
200
--
--
0.8
V
─
V
0.2
─
10
--
─
─
---
0.8
㎂
v/㎲
--
50
10
A/㎲
mA
Rth(j-c)
Thermal Impedance
Junction to case
─
─
60
°C/W
Rth(j-a)
Thermal Impedance
Junction to Ambient
─
─
150
°C/W
2/5
CR100-8
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
Max. Allowable Case Temperature [ C]
140
1
VGM(5V)
PG(AV)(0.1W)
0
10
IGM(1A)
Gate Voltage [V]
PGM(2W)
o
25 C
VGD(0.2V)
-1
10
120
o
10
0
1
10
2
10
3
10
10
100
θ = 180
80
60
π
o
2π
θ
40
360°
20
θ
0
0.0
4
10
: Conduction Angl e
0.1
0.2
0.3
0.4
0.5
0.6
Average On-State Current [A]
Gate Current [mA]
Fig 4. Thermal Response
Fig 3. Typical Forward Voltage
1
10
3
On-State Current [A]
o
Transient Thermal Impedance [ C/W]
10
0
10
o
125 C
o
25 C
-1
10
1
10
0
0.5
1.0
1.5
2.0
10
2.5
On-State Voltage [V]
-2
10
-1
0
10
1
10
2
10
10
3
10
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
10
o
o
IGT(t C)
10
IGT(25 C)
VGT(t C)
VGT(25oC)
Rθ (J-C)
2
10
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
150
1
0.1
-50
0
50
100
150
o
Junction Temperature[ C]
3/5
CR100-8
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
0.7
IH(25oC)
IH(t C)
o
Max. Average Power Dissipation [W]
θ = 180
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
4/5
150
0.6
θ = 120
θ = 90
0.5
θ = 30
o
θ = 60
o
o
o
o
0.4
0.3
0.2
0.1
0.0
0.0
0.1
0.2
0.3
0.4
Average On-State Current [A]
0.5
0.6
CR100-8
TO-92 Package Dimension
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
4.2
Typ.
Max.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
A
0.013
0.019
E
B
F
C
G
1
D
2
3
H
I
1. Cathode
2. Gate
3. Anode
J
5/5
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