CR100-8 Sensitive Gate Silicon Controlled Rectifiers TO-92 Symbol ○ 3. Anode BVDRM = 600V IT(RMS) = 1.0A ▼ ○ 1.Cathode ITSM = 10A 2.Gate 1 ○ 2 3 Features ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.)) ◆ General Description Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. This device may substitute for MCR100-6, MCR100-8 series. Absolute Maximum Ratings Symbol ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage sine wave,50 to 60Hz 600 V IT(AV) Average On-State Current half sine wave : TC = 83 °C 0.5 A IT(RMS) R.M.S On-State Current All Conduction Angle 1.0 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms 10 A I2t for Fusing t = 8.3ms 0.415 A 2s Forward Peak Gate Power Dissipation TA = 25 °C, pulse width ≤ 1.0㎲ 2 W Forward Average Gate Power Dissipation TA = 25 °C, t = 8.3ms 0.1 W IFGM Forward Peak Gate Current TA = 25 °C, pulse width ≤ 1.0㎲ 1 A VRGM Reverse Peak Gate Voltage TA = 25 °C, pulse width ≤ 1.0㎲ 5.0 V Operating Junction Temperature - 40 ~ 110 °C Storage Temperature - 40 ~ 150 °C I2 t PGM PG(AV) TJ TSTG 1/5 April, 2010. Rev.1 copyright @ Apollo Electron Co., Ltd. All rights reserved. CR100-8 Electrical Characteristics Symbol ( Tj = 25 °C unless otherwise noted ) Items Ratings Conditions Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 110°C ─ ─ ─ ─ 10 100 VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) ─ 1.3 1.7 IGT Gate Trigger Current (2) VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) dv/dt Critical Rate of Rise Off-State Voltage di/dt IH Critical Rate of Rise On-State Voltage Holding Current Unit ㎂ V VAK = 12 V, RL=100 Ω VD =12 V, RL=100 Ω VAK = 12 V, RL=100 Ω ITM = 2A ; Ig = 10mA VAK = 12 V, Gate Open Initiating Curent = 20mA Tj = 125 °C ─ -- 200 -- -- 0.8 V ─ V 0.2 ─ 10 -- ─ ─ --- 0.8 ㎂ v/㎲ -- 50 10 A/㎲ mA Rth(j-c) Thermal Impedance Junction to case ─ ─ 60 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ─ ─ 150 °C/W 2/5 CR100-8 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ C] 140 1 VGM(5V) PG(AV)(0.1W) 0 10 IGM(1A) Gate Voltage [V] PGM(2W) o 25 C VGD(0.2V) -1 10 120 o 10 0 1 10 2 10 3 10 10 100 θ = 180 80 60 π o 2π θ 40 360° 20 θ 0 0.0 4 10 : Conduction Angl e 0.1 0.2 0.3 0.4 0.5 0.6 Average On-State Current [A] Gate Current [mA] Fig 4. Thermal Response Fig 3. Typical Forward Voltage 1 10 3 On-State Current [A] o Transient Thermal Impedance [ C/W] 10 0 10 o 125 C o 25 C -1 10 1 10 0 0.5 1.0 1.5 2.0 10 2.5 On-State Voltage [V] -2 10 -1 0 10 1 10 2 10 10 3 10 Time (sec) Fig 6. Typical Gate Trigger Current vs. Junction Temperature Fig 5. Typical Gate Trigger Voltage vs. 10 o o IGT(t C) 10 IGT(25 C) VGT(t C) VGT(25oC) Rθ (J-C) 2 10 1 0.1 -50 0 50 100 o Junction Temperature[ C] 150 1 0.1 -50 0 50 100 150 o Junction Temperature[ C] 3/5 CR100-8 Fig 7. Typical Holding Current Fig 8. Power Dissipation 10 0.7 IH(25oC) IH(t C) o Max. Average Power Dissipation [W] θ = 180 1 0.1 -50 0 50 100 o Junction Temperature[ C] 4/5 150 0.6 θ = 120 θ = 90 0.5 θ = 30 o θ = 60 o o o o 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] 0.5 0.6 CR100-8 TO-92 Package Dimension Dim. mm Min. Inch Typ. A Max. Min. 4.2 Typ. Max. 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E F 0.4 4.43 4.83 G 0.016 0.174 0.190 0.45 0.017 H 2.54 0.100 I 2.54 0.100 J 0.33 0.48 A 0.013 0.019 E B F C G 1 D 2 3 H I 1. Cathode 2. Gate 3. Anode J 5/5