Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114GS3 Features • Built-in bias resistors, R=10kΩ • Complements the DTA114GS3 • Pb-free lead plating and halogen-free package Equivalent Circuit Outline SOT-323 DTC114GS3 R=10 kΩ B : Base C : Collector E : Emitter Ordering Information Device DTC114GS3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC114GS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 2/6 Absolute Maximum Ratings (Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 50 50 5 100 200 625 -55~+150 -55~+150 Unit V V V mA mW °C/W °C °C Electrical Characteristics (Ta=25℃) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Emitter-Base Resistance Transition Frequency Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) HFE R 50 50 5 300 30 7 10 500 580 120 13 V V V nA μA mV kΩ fT - 250 - MHz Test Conditions IC=50μA IC =1mA IE=720μA VCB=50V VEB=4V IC =10mA, IB=0.5mA VCE=5V, IC =5mA VCE=10V, IC=5mA, f=100MHz* * Transition frequency of the device Recommended Soldering Footprint DTC114GS3 CYStek Product Specification Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics DC Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 1000 Collector-Emitter Saturation Voltage--VCE(SAT) (mV) Current Gain---H FE 1000 Ta=125°C 75°C 25°C 0°C -40°C 100 10 VCE =5V Pulsed Ta=125°C 75°C 25°C 0°C -40°C 100 IC/IB=20 Pulsed 10 1 0.1 1 10 Collector Current ---I C (mA) 1 100 100 Power Derating Curve Grounded Emitter Propagation Characteristics 250 100 Ta= 125°C, 75°C, 25°, 0°C, -40°C Power Dissipation---P D(mW) Collector Current --- I C (mA) 10 Collector Current ---I C (mA) 10 1 VCE =5V Pulsed 0.1 0 DTC114GS3 0.2 0.4 0.6 0.8 Base-Emitter Voltage--- VBE(V) 200 150 100 50 0 1 0 50 100 150 200 Ambient Temperature --- TA(℃ ) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTC114GS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC114GS3 CYStek Product Specification Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 6/6 CYStech Electronics Corp. SOT-323 Dimension Marking: 3 Q A1 1 C K24 Lp 2 detail Z bp e1 W XX A B e E D A Device Code Z Date Code θ He 0 v A 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 2 mm 1 scale Style: Pin 1.Base 2.Emitter 3.Collector *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0078 0.0157 0.0031 0.0059 0.0709 0.0866 0.0453 0.0531 0.0472 0.0551 DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.20 0.40 0.08 0.15 1.80 2.20 1.15 1.35 1.20 1.40 DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256* 0.0846 0.0965 0.0105 0.0181 0.0051 0.0091 0.0079 0.0079 0° 8° Millimeters Min. Max. 0.65* 2.15 2.45 0.26 0.46 0.13 0.23 0.2 0.2 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC114GS3 CYStek Product Specification