NTMD4820N Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8 Features •Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •Dual SOIC-8 Surface Mount Package Saves Board Space http://onsemi.com V(BR)DSS RDS(on) Max ID Max 20 mW @ 10 V Applications 30 V •Disk Drives •DC-DC Converters •Printers 8A 27 mW @ 4.5 V N-Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V ID 6.4 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 1.28 Continuous Drain Current RqJA (Note 2) TA = 25°C ID 4.9 Power Dissipation RqJA (Note 2) TA = 70°C Steady State G 5.1 TA = 70°C W S A MARKING DIAGRAM & PIN ASSIGNMENT 3.9 TA = 25°C PD 0.75 W Continuous Drain Current RqJA t < 10 s (Note 1) TA = 25°C ID 8.0 A Power Dissipation RqJA t < 10 s (Note 1) TA = 25°C D1 D1 D2 D2 Pulsed Drain Current TA = 70°C 6.4 8 8 PD 2.0 W IDM 32 A TJ, TSTG -55 to +150 °C 1 4820N AYWW G SOIC-8 CASE 751 STYLE 11 1 S1 G1 S2 G2 TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) IS 1.7 A Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1.0 mH, RG = 25 W EAS 60.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Rating Symbol Max Junction-to-Ambient – Steady State (Note 1) RqJA 97.5 Junction-to-Ambient – t ≤ 10 s (Note 1) RqJA 62 Junction-to-FOOT (Drain) RqJF 40 Junction-to-Ambient – Steady State (Note 2) RqJA 167.5 4820N A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION THERMAL RESISTANCE RATINGS Device NTMD4820NR2G Unit °C/W Package Shipping† SOIC-8 (Pb-Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 December, 2007 - Rev. 0 1 Publication Order Number: NTMD4820N/D NTMD4820N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)jk Characteristic Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 30 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Tem‐ perature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS/TJ IDSS V 5.0 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 100°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coeffi‐ cient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 1.5 26 mV/°C VGS = 10 V ID = 7.5 A 15 20 VGS = 4.5 V ID = 6.5 A 20 27 VDS = 1.5 V, ID = 7.5 A 21 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 940 VGS = 0 V, f = 1.0 MHz, VDS = 15 V 225 CRSS 125 Total Gate Charge QG(TOT) 7.7 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 7.5 A pF 1.1 nC 3.3 3.2 VGS = 10 V, VDS = 15 V, ID = 7.5 A 15.2 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 9.4 VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W tf 4.0 ns 21 6.5 DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb VGS = 0 V ID = 1.7 A TJ = 25°C 0.75 TJ = 125°C 0.59 1.0 17.8 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.7 A V ns 8.3 9.5 QRR 8.0 nC Source Inductance LS 0.66 nH Drain Inductance LD 0.20 nH Reverse Recovery Time PACKAGE PARASITIC VALUES Gate Inductance LG Gate Resistance RG TA = 25°C 1.50 1.5 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 nH 3.0 W NTMD4820N TYPICAL PERFORMANCE CURVES 15 15 TJ = 25°C 6V 5V 4.5 V 7.5 3.4 V 5 3.2 V 2.5 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 4.2 V 4V 3.8 V 10 VDS ≥ 10 V 3.6 V ID, DRAIN CURRENT (AMPS) 12.5 3.0 V 2.8 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 5 4.0 1.5 1 TJ = -55°C 2.5 2 3.5 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.095 TJ = 25°C ID = 9 A 0.085 0.075 0.065 0.055 0.045 0.035 0.025 0.015 0.005 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25°C 0.025 VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 0.005 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100000 1.6 1.5 4.5 0.030 Figure 3. On-Resistance vs. Gate-to-Source Voltage VGS = 0 V ID = 7.5 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = 125°C TJ = 25°C 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 10V 1.3 1.2 1.1 1.0 0.9 10000 TJ = 150°C 1000 TJ = 100°C 0.8 0.7 0.6 -50 100 -25 0 25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMD4820N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 10 TJ = 25°C VGS = 0 V Ciss Coss 300 200 100 0 Crss 0 5 10 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 QT 9 VDS 8 7 6 12 5 8 3 2 4 ID = 7.5 A TJ = 25°C 1 0 30 2 0 14 0 16 3 IS, SOURCE CURRENT (AMPS) VDD = 10 V ID = 1 A VGS = 15 V td(off) 100 t, TIME (ns) 6 10 4 8 12 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 tf tr td(on) 10 1 10 1 0.5 0.6 0.7 0.8 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ms 1 ms 1 10 ms VGS = 20 V SINGLE PULSE TC = 25°C dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 10 0.01 0.1 2 RG, GATE RESISTANCE (OHMS) 10 ms 0.1 VGS = 0 V TJ = 25°C 0 0.4 100 100 ID, DRAIN CURRENT (AMPS) QGD QGS 4 Figure 7. Capacitance Variation 1 16 VGS VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1300 1200 1100 1000 900 800 700 600 500 400 75 ID = 11 A 50 25 0 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMD4820N PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AJ -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. A 8 5 S B 0.25 (0.010) M Y M 1 4 K -YG C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X S J SOLDERING FOOTPRINT* INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8 _ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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