BSZ160N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 100 V • Ideal for high frequency switching R DS(on),max 16 mΩ • Optimized technology for DC/DC converters ID 40 A • Excellent gate charge x R DS(on) product (FOM) PG-TSDSON-8 • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type Package Marking BSZ160N10NS3 G PG-TSDSON-8 160N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 40 V GS=10 V, T C=100 °C 28 V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Unit A 8 Pulsed drain current3) I D,pulse T C=25 °C 160 Avalanche energy, single pulse4) E AS I D=20 A, R GS=25 Ω 80 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information 2) Rev. 1.2 page 1 2009-11-12 BSZ160N10NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 63 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.1 R thJA=60 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 2.1 minimal footprint - - 62 6 cm2 cooling area2) - - 60 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=12 µA 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=20 A - 14 16 mΩ V GS=6 V, I D=10 A - 18 33 - 1.4 - Ω 16 33 - S Gate resistance RG Transconductance g fs Rev. 1.2 |V DS|>2|I D|R DS(on)max, I D=20 A page 2 2009-11-12 BSZ160N10NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1300 1700 - 240 320 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=50 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 11 - Turn-on delay time t d(on) - 13.0 - Rise time tr - 10.0 - Turn-off delay time t d(off) - 22.0 - Fall time tf - 5.0 - Gate to source charge Q gs - 5.7 - Gate charge at threshold Q g(th) - 3.8 - Gate to drain charge Q gd - 3.4 - Switching charge Q sw - 5.3 - Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 25 33 nC - - 40 A - - 160 - 0.9 1.2 V - 73 - ns - 52 - nC V DD=50 V, V GS=10 V, I D=10 A, R G=1.6 Ω ns Gate Charge Characteristics 5) V DD=50 V, I D=10 A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 1.2 T C=25 °C V GS=0 V, I F=20 A, T j=25 °C V R=50 V, I F=10A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2009-11-12 BSZ160N10NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 50 45 70 40 60 35 30 I D [A] P tot [W] 50 40 25 20 30 15 20 10 10 5 0 0 0 25 50 75 100 125 150 175 0 25 50 75 T C [°C] 100 125 150 175 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 102 10 µs 10 0.5 Z thJC [K/W] I D [A] DC 1 100 µs 1 0.2 0.1 0.1 1 ms 100 0.05 0.02 0.01 10 ms single pulse 0.01 10-1 10 -1 10 0 10 1 10 2 10 3 10 0 -6 10 0 -5 10 0 -4 10 0 -3 10 0 -2 10 1 -1 100 t p [s] V DS [V] Rev. 1.2 0 page 4 2009-11-12 BSZ160N10NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 100 10 V 40 7V 9V 8V 36 6V 80 32 5V 28 R DS(on) [mΩ] 60 I D [A] 5.5 V 40 5V 24 V 5.5 20 V6 7V 16 8V 9V 10 V 12 20 8 4.5 V 4 0 0 0 1 2 3 4 5 0 20 40 V DS [V] 60 80 100 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 80 40 60 30 g fs [S] I D [A] parameter: T j 40 20 20 10 150 °C 25 °C 0 0 0 1 2 3 4 5 6 7 V GS [V] Rev. 1.2 0 10 20 30 I D [A] page 5 2009-11-12 BSZ160N10NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 4 40 35 3 30 330 µA 20 V GS(th) [V] R DS(on) [mΩ] 33 µA 25 98% 15 2 Typ 1 10 5 0 0 -60 -20 20 60 100 140 -60 180 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 10 3 25 °C 150 °C 100 25 °C I F [A] C [pF] Coss 102 150 °C 10 Crss 101 100 1 0 20 40 60 80 V DS [V] Rev. 1.2 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2009-11-12 BSZ160N10NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=10 A pulsed parameter: T j(start) parameter: V DD 100 12 50 V 10 20 V 80 V V GS [V] I AV [A] 8 10 25 °C 100 °C 6 125 °C 4 2 1 0 0.1 1 10 100 1000 0 5 t AV [µs] 10 15 20 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg V BR(DSS) [V] 105 100 V g s(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.2 page 7 2009-11-12 BSZ160N10NS3 G Package Outline: PG-TSDSON-8 Footprint Dimensions in mm Rev. 1.2 page 8 2009-11-12 BSZ160N10NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 2009-11-12