ASI MRF314A Npn silicon rf power transistor Datasheet

MRF314A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF314A is Designed for Class
C Power Amplifier Applications up to
200 MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
FEATURES:
• PG = 10 dB min. at 30 W/ 150 MHz
• Withstands 30:1 Load VSWR
• Omnigold™ Metalization System
C
B
E
ØC
E
B
D
MAXIMUM RATINGS
H
I
J
G
#8-32 UNC-2A
4.0 A
IC
A
F
E
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
O
60 W @ TC = 25 C
O
O
O
O
-65 C to +200 C
TJ
TSTG
-65 C to +150 C
θJC
O
inches / mm
inches / mm
A
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10770
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
MINIMUM
.220 / 5.59
J
2.9 C/W
CHARACTERISTICS
MAXIMUM
DIM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
35
V
BVCES
IC = 200 mA
65
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VE = 28 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
ηC
ψ
VCC = 28 V
IC = 200 mA
5
f = 1.0 MHz
POUT = 30 W
f = 150 MHz
10
50
13.5
60
2.0
mA
---
---
50
pF
dB
%
30:1 minimum without degration in output power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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