UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G ORDERING INFORMATION Ordering Number Normal Lead Free Halogen Free MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MMBT3906G-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING 2A. L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-013.D MMBT3906 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -40 V Emitter Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Dissipation PC 350 mW Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note) Emitter-Base Breakdown Voltage DC Current Gain (Note) Collector-Emitter Saturation Voltage (Note) Base-Emitter Saturation Voltage Transition Voltage Output Capacitance Turn on Time SYMBOL TEST CONDITIONS ICEX VCE=-30V, VEB=-3V IBL VCE=-30V, VEB=-3V VCBO IC=-10μA,IE=0 -40 VCEO IC=-1mA, IB=0 VEBO hFE1 hFE2 hFE3 hFE4 hFE5 IE=-10μA, IC=0 -6 VCE=-1V, IC=-0.1mA 60 VCE=-1V, IC=-1mA 80 VCE=-1V, IC=-10mA 100 VCE=-1V, IC=-50mA 60 VCE=-1V, IC=-100mA 30 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA -0.65 IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz 250 VCB=-5V,IE=0, f=1MHz VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA IB1=1B2=-1mA VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 VBE(SAT)2 fT Cob tON Turn off Time tOFF Note: Pulse test: PW≦300μs, Duty Cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -50 nA -50 nA V -40 V V 300 -0.25 -0.4 -0.85 -0.95 4.5 V V V V MHz pF 70 ns 300 ns 2 of 3 QW-R206-013.D MMBT3906 TYPICAL CHARACTERISTICS DC Current Gain Current Gain-Bandwidth Product 1000 DC Current Gain, hFE 300 VCE=10V 100 50 VCE=1V 30 10 -1 -3 -5 -10 Current Gain-Bandwidth Product, fT(MHz) 1000 VCE=-1V 500 -30 -50 -100 -300 -1000 VCE=-20V 500 300 100 50 30 10 -0.1 -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 Collector Current, IC(mA) Collector Current, IC(mA) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Output Capacitance -10 -5 -3 12 IC=10 IB VBE(SAT) -1 -0.5 -0.3 -0.1 VCE(SAT) -0.05 -0.03 Capacitance, Cob (pF) Saturation Voltage, VBE(SAT), VCE(SAT) (V) PNP SILICON TRANSISTOR IE=0 f=100KHz 10 8 6 4 2 -0.01 -0.1 -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 Collector Current, IC(mA) 0 -1 -3 -5 -10 -30 -30 -50 -100 Collector-Base Voltage, VCB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-013.D