Dynex DCR1675SA52 Phase control thyristor Datasheet

DCR1675SA
DCR1675SA
Phase Control Thyristor
Advance Information
Replaces DCR1675SZ issue July 2001 version, DS4648-7.1
FDS5648-1.0 August 2003
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
5200V
IT(AV)
3770A
ITSM
50000A
dVdt*
1000V/µs
dI/dt
300A/µs
■ High Surge Capability
■ High Mean Current
■ Fatigue Free
APPLICATIONS
*Higher dV/dt selections available
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
DCR1675SA52
DCR1675SA51
DCR1675SA50
DCR1675SA49
DCR1675SA48
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
5200
5100
5000
4900
4800
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
Outline type code: A.
See Package Details for further information.
Fig. 1 Package outline
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1675SA51
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
1/8
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DCR1675SA
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
3770
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
5920
A
Continuous (direct) on-state current
-
5486
A
2476
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3889
A
Continuous (direct) on-state current
-
3333
A
Conditions
Max.
Units
2975
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4670
A
Continuous (direct) on-state current
-
4230
A
1920
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3015
A
Continuous (direct) on-state current
-
2510
A
IT
Half wave resistive load
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DCR1675SA
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
50.0
kA
VR = 50% VRRM - 1/4 sine
12.5 x 106
A2s
10ms half sine; Tcase = 125oC
62.5
kA
VR = 0
19.5 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
dc
-
0.0065
o
Anode dc
-
0.013
o
Cathode dc
-
0.013
o
C/W
Double side
-
0.001
o
C/W
Single side
-
0.002
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
125
o
Clamping force
74.0
91.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 83.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1675SA
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
500
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC, gate open circuit.
-
1000
V/µs
-
150
A/µs
Rate of rise of on-state current
From 67% VDRM to 1000A
Gate source 30V, 10Ω
tr = 0.5µs to 1A, Tj = 125oC
Repetitive 50Hz
dI/dt
Non-repetitive
-
300
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.0
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.15
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 20V, 10Ω
tr = 0.5µs, Tj = 25oC
-
1.1
µs
IL
Latching current
Tj = 25oC, VD = 5V
-
650
mA
IH
Holding current
Tj = 25oC, Rg-k = ∞
-
200
mA
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
500
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, gate characteristics curve
150
W
PG(AV)
Mean gate power
10
W
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DCR1675SA
CURVES
5000
10000
Measured under pulse conditions
Tj = 125˚C
d.c.
Half wave
4000
Instantaneous on-state current, IT - (A)
8000
3 phase
Mean power dissipation - (W)
6 phase
3000
2000
1000
0
0.5
6000
4000
2000
1.0
1.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
2.0
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
5000
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.8497627
B = –0.03614853
C = 5.286579 x 10–5
D = 0.01334724
these values are valid for Tj = 125˚C for IT 500A to 5000A
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DCR1675SA
100000
100
Tj = 125˚C
Table gives pulse power PGM in Watts
Gate trigger voltage, VGT - (V)
Total stored charge, QS - (µC)
Pulse Width
IT = 600A
10000
Frequency Hz
50
150
150
150
150
20
µs
100
200
500
1ms
10ms
100
150
150
150
100
-
400
150
125
100
25
-
VFGM
100W
50W
20W
10W
10
r
pe
p
U
1
9
it
m
Li
9%
Tj = 25˚C
IT
%
QS
VGD
Lo
tp = 3ms
dI/dt
1000
0.1
IRM
1.0
10
Rate of decay of on-state current dI/dt - (A/µs)
100
w
L
er
im
it 1
IGD
0.1
0.001
IFGM
Fig.4 Stored charge
Fig.5 Gate characteristics
125
0.1
I2t = Î2 x t
2
12.5
0.01
Double side cooled
0.001
Effective thermal resistance
Junction to case ˚C/W
Conduction
Double side
0.0065
0.0072
0.0073
0.0076
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
1
Anode side
0.0130
0.0137
0.0138
0.0141
10
100
Time - (s)
Fig.6 Transient thermal impedance - junction to case
I2t
10.0
75
7.5
50
5.0
I2t value - (A2s x 106)
Thermal impedance - (˚C/W)
Anode side cooled
Peak half sine wave on-state current - (kA)
100
0.0001
0.001
10
0.01
0.1
1.0
Gate trigger current, IGT - (A)
25
2.5
0
1
10
ms
1
2 3 45
10
0
20 30 50
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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DCR1675SA
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode tab
Cathode
Ø148 nom
Ø100 nom
35.0 ± 0.5
Ø1.5
Gate
Ø100 nom
Anode
Ø138.5
Nominal weight: 2575g
Clamping force: 83kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: A
Fig.8 Package outline
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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