Weitron MMBT5551 High voltage npn transistor Datasheet

MMBT5550
MMBT5551
High Voltage NPN Transistors
COLLECTOR
3
3
1
BASE
1
2
SOT-23
2
EMITTER
V CEO
Value
140
160
6.0
600
556
300
2.4
417
MMBT5550 = M1F ; MMBT5551 = G1
(TA=25 C unless otherwise noted)
(3)
1.0
,
MMBT5550
MMBT5551
140
160
-100
,
MMBT5550
MMBT5551
160
180
10
,
WEITRON
http://www.weitron.com.tw
6.0
MMBT5550
MMBT5551
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Min
Symbol
Characteristics
Max
Unit
100
50
100
50
nAdc
OFF CHARACTERISTICS
I CBO
Collector Cutoff Current
( VCB 100 Vdc, I E= 0 )
( VCB 120 Vdc, I E= 0 )
MMBT5550
MMBT5551
MMBT5550
MMBT5551
( VCB 100 Vdc, I E= 0 ,TA= 100 C )
( VCB 100 Vdc, IE= 0 , TA= 100 C )
Emitter Cutoff Current
( VEB 4.0 Vdc, I C=0 )
I EBO
50
uAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC=1.0 mAdc, VCE=5.0 Vdc)
hFE
-
MMBT5550
MMBT5551
60
80
-
(IC=10 mAdc, VCE=5.0 Vdc)
MMBT5550
MMBT5551
60
80
250
250
(IC=50 mAdc, VCE=5.0 Vdc)
MMBT5550
MMBT5551
20
30
-
VCE(sat)
Collector-Emitter Saturation Voltage
Vdc
(IC=10 mAdc, IB=1.0mAdc)
Both Types
-
0.15
(IC=50 mAdc, IB=5.0mAdc)
MMBT5550
MMBT5551
-
0.25
0.20
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10 mAdc, IB=1.0mAdc)
Both Types
-
1.0
(IC=50 mAdc, IB=5.0mAdc)
MMBT5550
MMBT5551
-
1.2
1.0
1. FR-5=1.0 x 0.75 x 0.062 in
2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%
WEITRON
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MMBT5550
MMBT5551
h FE , DC CURRENT GAIN
500
300
VCE = 1.0 V
VCE = 5.0 V
TJ = 125 C
200
25 C
100
-55 C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0 7.0
10
I C , COLLECTOR CURRENT (mA)
20
30
50
70
100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIG.1 DC Current Gain
1.0
0.9
0.8
0.7
IC = 1.0 m A
0.6
10 m A
100 m A
30 m A
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I B , BASE CURRENT (mA)
2.0
5.0
10
20
50
FIG. 2 Collector Saturation Region
100
1.0
VCE = 30 V
TJ = 125 C
10-1
-2
10
I C = I CES
75 C
-3
REVERSE
10
FORWARD
25 C
-4
10
10
V, VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
1
10
TJ = 25 C
0.8
0.6
VBE(sat ) @ I C / I B = 10
0.4
0.2
VCE(sat )@ IC / I B = 10
-5
0.4
0.3
0.2 0.1 0
0.1 0.2 0.3 0.4 0.5
VBE , BASE-EMITTER VOLTAGE (VOLTS)
FIG. 3 Collector Cut-Off Region
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0.6
0
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC , COLLECTOR CURRENT (mA)
FIG. 4 "On" Voltages
100
MMBT5550
MMBT5551
V , TEMPERA TURE COEFFICIENT (mV/ C)
2.5
2.0
TJ = - 55 C to +135 C
1.5
1.0
0.5
Vin
0
- 0.5
- 1.0
- 1.5
0.20.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC , COLLECTOR CURRENT (mA)
100
Vout
5.1 k
100
1N914
1000
TJ= 25 C
I C / I B = 10
TJ = 25 C
500
tr @ VCC= 120 V
300
t , TIM E (n s)
C, CAPACIT ANCE (p F)
RB
20
10
Cibo
7.0
5.0
Cobo
3.0
200
t r@ VCC = 30 V
100
50
t d@ VEB(off) = 1.0 V
30
VCC = 120 V
20
2.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
10
0.20.3 0.5
VR, REVERSE VOLTAGE (VOLTS)
20 30 50
1.0 2.03.0 5.0 10
I C , COLLECTOR CURRENT (mA)
FIG. 7 Capacitances
5000
FIG. 8 Turn-On Time
t f @ VCC= 120 V
3000
t , TIME (n s)
2000
IC / I B = 10
TJ = 25 C
t f @ VCC = 30 V
1000
500
300
200
t s@ VCC = 120 V
100
50
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
I C , COLLECTOR CURRENT (mA)
FIG.9 Turn-Off Time
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RC
FIG. 6 Switching Time Test Circuit
30
1.0
0.2 0.3
3.0 k
Values Shown are for IC@ 10 mA
FIG.5 Temperature Coefficients
100
70
50
0.25mF
tr ,t f 10 n s
Vin
DUTY CYCLE = 1.0%
- 2.0
- 2.5
0.1
100
10 ms
INPUT PULSE
q VB for VBE(sat)
VCC
30 V
VBB
-8.8V
10.2 V
q VC for VCE(sat)
100 200
100 200
MMBT5550
MMBT5551
SOT-23 Package Outline Dimensions
Unit:mm
A
B
TOP VIEW
E
G
Dim Min Max
A
0.35 0.51
B
1.19 1.80
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.60
L
0.30 0.61
M 0.076 0.25
C
D
H
K
J
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L
M
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