DMTH6010LK3Q Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary INFORMATION ADVANCED NEW PRODUCT BVDSS Features ID Max RDS(ON) Max TC = +25°C 8mΩ @ VGS = 10V 70A 12mΩ @ VGS = 4.5V 50A 60V Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DCDC Converters Rated to 175°C – ideal for high ambient temperature environments 100% Unclamped Inductive Switching – ensures more reliable and robust end application Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMTH6010LK3Q-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H6010L YYWW DMTH6010LK3Q Document number: DS38162 Rev. 2 - 2 = Manufacturer’s Marking H6010L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH6010LK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25C TA = +70C TC = +25C TC = +100C INFORMATION ADVANCED NEW PRODUCT Continuous Drain Current, VGS = 10V (Note 6) Continuous Drain Current, VGS = 10V (Note 7) Value 60 ±20 14.8 11.9 ID A IS IDM IAS EAS 70 50 60 130 20 20 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 31 47 60 2.5 -55 to +175 Unit W °C/W W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Unit V V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 60 - - 1 V μA - - 100 μA Zero Gate Voltage Drain Current (Note 9) IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS - - ±100 nA VGS(TH) RDS(ON) VSD 6.3 8.3 0.9 3 8 12 1.2 V Static Drain-Source On-Resistance 1 - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 0.1 - 2090 746 38.5 0.59 19.3 41.3 6 8.8 5.7 4.3 23.4 9.7 35.4 38.2 1.8 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, IS = 20A pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 20A, Rg = 3Ω ns nC IF = 20A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH6010LK3Q Document number: DS38162 Rev. 2 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH6010LK3Q 30.0 30 VGS=3.5V VDS= 5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=3.0V VGS=4.0V VGS=4.5V 20.0 15.0 VGS=10V 10.0 VGS=2.5V 5.0 20 15 125℃ 10 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 85℃ 150℃ 25℃ 5 175℃ VGS=2.2V 0.0 -55℃ 0 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) Figure 2. Typical Transfer Characteristic 0.01 0.009 VGS=4.5V 0.008 0.007 VGS=10V 0.006 0.005 0.004 0 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 0.02 2 1.6 1.2 VGS=10V, ID=10A 0.8 VGS=5V, ID=5A 0.4 VGS= 4.5V 0.018 150℃ 0.016 125℃ 175℃ 0.014 0.012 85℃ 0.01 25℃ 0.008 -55℃ 0.006 0.004 0.002 0 20 0 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) INFORMATION ADVANCED NEW PRODUCT 25.0 5 0.02 0.018 0.016 0.014 0.012 VGS=5V, ID=5A 0.01 0.008 0.006 VGS=10V, ID=10A 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Temperature DMTH6010LK3Q Document number: DS38162 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature December 2015 © Diodes Incorporated DMTH6010LK3Q 30 1.8 1.6 IS, SOURCE CURRENT (A) INFORMATION ADVANCED NEW PRODUCT VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 ID=1mA 1.4 1.2 1 ID=250μA 0.8 0.6 25 VGS=0V, TJ=125℃ 20 VGS=0V, TJ=150℃ 15 VGS=0V, TJ=175℃ VGS=0V, TJ=85℃ 10 VGS=0V, TJ=25℃ 5 0.4 VGS=0V, TJ=-55℃ 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. junction Temperature 175 0 10000 1.5 10 f=1MHz 9 Ciss 8 Coss 1000 7 VDS=30V, ID=20A 6 VGS (V) CT, JUNCTION CAPACITANCE (pF) 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 100 Crss 5 4 3 10 2 1 0 1 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance 40 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 10. Gate Charge 40 45 1000 ID, DRAIN CURRENT (A) RDS(ON) Limited PW =10µs PW =100µs PW =1µs 100 10 1 0.1 PW =1ms TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on infinite heatsink VGS= 10V PW =10ms PW =100ms PW =1s 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area DMTH6010LK3Q Document number: DS38162 Rev. 2 - 2 100 4 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH6010LK3Q D=0.7 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCED NEW PRODUCT 1 D=0.9 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RθJC(t) = r(t) * RθJC RθJC = 2.48℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 DMTH6010LK3Q Document number: DS38162 Rev. 2 - 2 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 12 .Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 December 2015 © Diodes Incorporated DMTH6010LK3Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TO252 (DPAK) E A INFORMATION ADVANCED NEW PRODUCT b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMTH6010LK3Q Document number: DS38162 Rev. 2 - 2 6 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH6010LK3Q IMPORTANT NOTICE INFORMATION ADVANCED NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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