SemiHow HRU13N10K 100v n-channel trench mosfet Datasheet

BVDSS = 100 V
RDS(on) typ = 85 Pȍ
HRD13N10K / HRU13N10K
ID = 3.5 A
100V N-Channel Trench MOSFET
D-PAK
FEATURES
I-PAK
2
‰ Originative New Design
1
1
2
3
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
3
HRD13N10K
HRU13N10K
1.Gate 2. Drain 3. Source
‰ Unrivalled Gate Charge : 20 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 85 Pȍ (Typ.) @VGS=10V
‰ Lower RDS(ON) : 135 Pȍ (Typ.) @VGS=4.5V
‰ Built-in ESD Diode
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
100
V
Drain Current
– Continuous (TC = 25୅)
3.5
A
Drain Current
– Continuous (TC = 70୅)
2.8
A
IDM
Drain Current
– Pulsed
14.0
A
VGS
Gate-Source Voltage
ρ20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
40
mJ
IAR
Avalanche Current
(Note 1)
3.5
A
Power Dissipation (TA = 25୅)*
2.5
W
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
37
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.3
W/୅
-55 to +150
୅
300
୅
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
3.4
RșJA
Junction-to-Ambient*
--
50
RșJA
Junction-to-Ambient
--
110
Units
୅/W
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HRD13N10K_HRU13N10K
Dec 2013
Device Marking
Week Marking
Package
Packing
Quantity
RoHS Status
HRD13N10K
YWWX
TO-252
Tube / Reel
80 / 2,500
Pb Free
HRD13N10K
YWWXg
TO-252
Tube / Reel
80 / 2,500
Halogen Free
HRU13N10K
YWWX
TO-251
Tube
80
Pb Free
HRU13N10K
YWWXg
TO-251
Tube
80
Halogen Free
Electrical Characteristics TC=25 qC
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
--
2.5
V
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
1.5
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.5 A
--
85
105
mŸ
VGS = 4.5 V, ID = 2.0 A
--
135
175
mŸ
VGS = 0 V, ID = 250 Ꮃ
100
--
--
V
VDS = 100 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 100 V, TC = 125୅
--
--
30
Ꮃ
VGS = ρ16 V, VDS = 0 V
--
--
ρ10
Ꮃ
--
940
1220
Ꮔ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
--
80
105
Ꮔ
--
50
65
Ꮔ
--
17
44
Ꭸ
--
24
58
Ꭸ
--
85
180
Ꭸ
--
12
34
Ꭸ
--
20
26
nC
--
3.0
--
nC
--
4.2
--
nC
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 50 V, ID = 3.5 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 80 V, ID = 3.5 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
3.5
ISM
Pulsed Source-Drain Diode Forward Current
--
--
14.0
VSD
Source-Drain Diode Forward Voltage
IS = 3.5 A, VGS = 0 V
--
--
1.1
V
trr
Reverse Recovery Time
--
44
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 3.5 A, VGS = 0 V
diF/dt = 100 A/ȝV
(Note 4)
--
80
--
nC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=0.1mH, ISD”$9DD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HRD13N10K_HRU13N10K
Package Marking and Odering Information
HRD13N10K_HRU13N10K
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Gate-Source On Resistance
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VGS, Gate-Source Voltage [V]
12
VDS = 50V
10
VDS = 80V
8
6
4
2
* Note : ID = 3.5A
0
0
3
6
9
12
15
18
21
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HRD13N10K_HRU13N10K
Typical Characteristics
(continued)
Figure 7. Gate Threshold Voltage
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HRD13N10K_HRU13N10K
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HRD13N10K_HRU13N10K
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HRD13N10K_HRU13N10K
Package Dimension
{vTY\YG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HRD13N10K_HRU13N10K
Package Dimension
{vTY\XG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡