DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
Stacked 1Gb C-die DDR SDRAM Specification
(x4/x8)
66 TSOP-II with Pb-Free
(RoHS compliant)
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* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
Table of Contents
1.0 Key Features .............................................................................................................................. 4
2.0 Ordering Information ................................................................................................................ 4
3.0 Operating Frequencies............................................................................................................... 4
4.0 Pin Description .......................................................................................................................... 5
5.0 Package Physical Dimension ................................................................................................... 6
6.0 Block Diagram (64Mbit x4 / 32Mbit x8 I/O x4 Banks) ............................................................... 7
7.0 Input/Output Function Description ........................................................................................... 8
8.0 Command Truth Table ............................................................................................................... 9
9.0 General Description...................................................................................................................10
10.0 Absolute Maximum Rating .....................................................................................................10
11.0 DC Operating Conditions ........................................................................................................10
12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11
13.0 Input/Output Capacitance ......................................................................................................11
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12
15.0 DDR SDRAM IDD spec table ..................................................................................................13
16.0 AC Operating Conditions .......................................................................................................14
17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15
19.0 AC Timming Parameters & Specifications ...........................................................................16
20.0 System Characteristics for DDR SDRAM ............................................................................. 17
21.0 Component Notes ................................................................................................................... 18
22.0 System Notes ..........................................................................................................................20
23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
Revision History
Revision
Month
Year
History
0.0
January
2005
- First version for internal review
1.0
April
2005
- Revision 1.0 spec. release.
1.1
June
2005
- Changed master format.
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
1.0 Key Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe DQS
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
2.0 Ordering Information
Part No.
K4H1G0638C-UC/LA2
K4H1G0638C-UC/LB0
K4H1G0738C-UC/LA2
K4H1G0738C-UC/LB0
Org.
st.256M x 4
st.128M x 8
Max Freq.
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Interface
Package
SSTL2
66pin TSOP II
SSTL2
66pin TSOP II
3.0 Operating Frequencies
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
Speed @CL2
133MHz
100MHz
Speed @CL2.5
133MHz
133MHz
Speed @CL3
-
-
CL-tRCD-tRP
2-3-3
2.5-3-3
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
4.0 Pin Description
st.128Mb x 8
st.256Mb x 4
VDD
DQ0
VDDQ
VDD
NC
1
66
VSS
VSS
2
65
NC
DQ7
VSSQ
VDDQ
3
64
VSSQ
NC
NC
4
63
NC
NC
DQ1
DQ0
5
62
DQ3
DQ6
VSSQ
VSSQ
6
61
VDDQ
VDDQ
NC
NC
7
60
NC
NC
DQ2
NC
8
59
NC
DQ5
VDDQ
9
58
VSSQ
VSSQ
57
NC
NC
56
DQ2
DQ4
55
VDDQ
VDDQ
54
NC
NC
53
NC
NC
52
VSSQ
VSSQ
51
DQS
DQS
50
NC
NC
49
VREF
VREF
48
VSS
VSS
DM
VDDQ
NC
DQ3
10
NC
11
DQ1
VSSQ
VSSQ
12
NC
NC
13
NC
NC
14
VDDQ
VDDQ
15
NC
NC
16
NC
NC
17
VDD
NC
NC
VDD
18
NC
19
66Pin TSOPII
(400mil x 875mil)
(0.65mm Pin Pitch)
Bank Address
BA0~BA1
Auto Precharge
A10
NC
20
47
DM
WE
WE
21
46
CK
CK
CAS
CAS
22
45
CK
CK
RAS
RAS
23
44
CKE0
CKE0
CS0
CS0
24
43
CKE1
CKE1
CS1
CS1
25
42
A12
A12
BA0
BA0
26
41
A11
A11
27
40
A9
A9
39
A8
A8
A7
BA1
AP/A10
BA1
AP/A10
28
A0
A0
29
38
A7
A1
A1
30
37
A6
A6
A2
A2
31
36
A5
A5
A3
A3
32
35
A4
A4
VDD
VDD
33
34
VSS
VSS
stacked 1Gb TSOP-II Package Pinout
Organization
Row Address
Column Address
st.256Mx4
A0~A12
A0-A9, A11, A12
st.128Mx8
A0~A12
A0-A9, A11
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
5.0 Package Physical Dimension
#33
0.45~0.75
#1
Units : Millimeters
10.16
+0.075
0.05(min)
0.45~0.75
(4×
)
2.54(max)
(0.71)
(R
0.2
5)
0.25 ± 0.08
(R
0.
25
)
0.125 - 0.035
22.62MAX
22.22 ± 0.10
0.65
(0.50)
#34
11.76±0.20
#66
0.25TYP
0×~8×
NOTE
1. (
) IS REFERENCE
2. [
] IS ASS’Y OUT QUALITY
66pin TSOPII / Package dimension
6.0 Block Diagram (32Mb x 4 / 16Mb x 8 / 8Mb x 16 I/O x4 Banks)
CK,CK,CAS
RAS,WE,DM
CK,CK,CAS
RAS,WE,DM
128Mx4
CKE1,CS1
64Mx8
CKE1,CS1
128Mx4
64Mx8
CKE0,CS0
CKE0,CS0
I/O0-I/O3,DQS
st.256Mb x 4
A0-A12,BA0,BA1
I/O 0 ~ I/O 3, DQSA0-A12, BA0,BA1
st.128Mb x 8
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
7.0 Input/Output Function Description
SYMBOL
TYPE
DESCRIPTION
CK, CK
Input
Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to
both edges of CK. Internal clock signals are derived from CK/CK.
CKE
Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE Low provides PRECHARGE POWERDOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER-DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE
must be maintained high throughput READ and WRITE accesses. Input buffers, excluding CK,
CK and CKE are disabled during POWER-DOWN. Input buffers, excluding CKE are disabled
during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS Low level after
Vdd is applied upon 1st power up, After VREF has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For
proper SELF-REFRESH entry and exit, VREF must be maintained to this input.
CS
Input
Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command
decoder. All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the command code.
RAS, CAS, WE
Input
Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
LDM,(UDM)
Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled on both
edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS
loading. For the x16, LDM corresponds to the data on DQ0~D7 ; UDM corresponds to the data
on DQ8~DQ15. DM may be driven high, low, or floating during READs.
BA0, BA1
Input
Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied.
A [0 : 12]
Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address and
AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also
provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which
mode register is loaded during the MODE REGISTER SET command (MRS or EMRS).
DQ
I/O
Data Input/Output : Data bus
LDQS,(U)DQS
I/O
Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on
DQ0~D7 ; UDQS corresponds to the data on DQ8~DQ15
NC
-
VDDQ
Supply
DQ Power Supply : +2.5V ± 0.2V. (+2.6V ±0.1V for DDR400)
VSSQ
Supply
DQ Ground.
VDD
Supply
Power Supply : +2.5V ± 0.2V. (+2.6V ±0.1V for DDR400)
VSS
Supply
Ground.
VREF
Input
No Connect : No internal electrical connection is present.
SSTL_2 reference voltage.
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
8.0 Command Truth Table
COMMAND
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
CKEn-1 CKEn
CS
RAS
CAS
WE
BA0,1 A10/AP
A0 ~ A9,
A11 ~ A12
Note
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
L
L
L
H
X
Auto Refresh
Refresh
Self
Refresh
Entry
Exit
H
H
L
L
H
H
H
H
X
X
X
X
L
L
H
H
V
X
L
H
L
H
V
L
H
Bank Active & Row Addr.
H
Read &
Column Address
Auto Precharge Disable
H
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
H
X
L
H
L
L
H
X
L
H
H
L
H
X
L
L
H
L
Entry
H
L
H
X
X
X
L
V
V
V
Exit
L
H
Auto Precharge Enable
Burst Stop
Precharge
Bank Selection
All Banks
Active Power Down
Entry
H
L
Precharge Power Down Mode
Exit
L
DM(UDM/LDM for x16 only)
H
No operation (NOP) : Not defined
H
H
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
X
X
X
L
H
H
H
3
3
X
V
3
Row Address
L
Column
Address
H
L
Column
Address
H
X
V
L
X
H
4
4
4
4, 6
7
X
5
X
X
X
H
3
X
8
9
9
Note :
1. OP Code : Operand Code. A0 ~ A13& BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges
(Write UDM/LDM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
st. 64M x 4Bit x 4 Banks / st. 32M x 8Bit x 4 Banks Double Data Rate SDRAM
9.0 General Description
The K4H1G0638C / K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864 / 4x
33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features
with Data Strobe allow extremely high performance up to 266Mb/s per pin. I/O transactions are possible on both edges of DQS. Range
of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
10.0 Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
11.0 DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333)
VDD
2.3
2.7
Supply voltage(for device with a nominal VDD of 2.6V for DDR400)
VDD
2.5
2.7
I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333)
VDDQ
2.3
2.7
I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR400)
VDDQ
2.5
2.7
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V
2
Input logic high voltage
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
II
-2
2
uA
5
Input leakage current
Output leakage current
IOZ
-5
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V
IOH
-16.8
mA
uA
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V
IOL
16.8
mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
IOL
9
mA
Note :
1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may
not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
12.0 DDR SDRAM Spec Items & Test Conditions
Conditions
Symbol
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
IDD0
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition
IDD1
Precharge power-down standby current; All banks idle; power - down mode;
CKE = <VIL(max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
Vin = Vref for DQ,DQS and DM.
IDD2P
Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=10ns for
DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs changing
once per clock cycle; Vin = Vref for DQ,DQS and DM
IDD2F
Precharge Quiet standby current; CS# > = VIH(min); All banks idle;
CKE > = VIH(min); tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and
other control inputs stable at >= VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM
IDD2Q
Active power - down standby current ; one bank active; power-down mode;
CKE=< VIL (max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
Vin = Vref for DQ,DQS and DM
IDD3P
Active standby current; CS# >= VIH(min); CKE>=VIH(min);
one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for
DDR333, 5ns for DDR400; DQ, DQS and DM inputs changing twice per clock cycle; address and other control
inputs changing once per clock cycle
IDD3N
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control
inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266(A2), CL=2.5 at
tCK=7.5ns for DDR266(B0), tCK=6ns for DDR333, CL=3 at tCK=5ns for DDR400; 50% of data changing on every
transfer; lout = 0 m A
IDD4R
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2
at tCK=7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333, 5ns for DDR400; DQ, DM
and DQS inputs changing twice per clock cycle, 50% of input data changing at every burst
IDD4W
Auto refresh current; tRC = tRFC(min) which is 12*tCK for DDR200 at tCK=10ns; 16*tCK for DDR266 at
tCK=7.5ns; 20*tCK for DDR333 at tCK=6ns, 24*tCK for DDR400 at tCK=5ns; distributed refresh
IDD5
Self refresh current; CKE =< 0.2V; External clock on; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for
DDR333, 5ns for DDR400.
IDD6
Operating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition
IDD7A
13.0 Input/Output Capacitance
( TA= 25°C, f=100MHz)
Parameter
Symbol
Min
Max
Delta Cap(max)
Unit
Note
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
CIN1
4
6
1
pF
4
Input capacitance( CK, CK )
CIN2
4
6
0.5
pF
4
Data & DQS input/output capacitance
COUT
8
10
pF
1,2,3,4
Input capacitance(DM for x4/8, UDM/LDM for x16)
CIN3
8
10
pF
1,2,3,4
1
Note :
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. For DDR266 and DDR333 VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V. For
DDR400, VDDQ = +2.6V +0.1V, VDD = +2.6V +0.1V. For all devices, f=100MHz, tA=25°C, Vout(dc) = VDDQ/2, Vout(peak to
peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace
matching at the board level).
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A
IDD1 : Operating current: One bank operation
1. Typical Case: Fro DDR200,266,333: Vdd = 2.5V, T=25’C; For DDR400: Vdd=2.6V,T=25’C
Worst Case : Vdd = 2.7V, T= 10’c
2. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
3. Timing patterns
- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- B3(166Mhz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC = 10*tCK, tRAS=7*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- CC(200Mhz,CL = 3) : tCK = 5ns, CL = 3, BL = 4, tRCD = 3*tCK , tRC = 11*tCK, tRAS = 8*tCK
Read : A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing
*50% of data changing at every transfer
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=DESELECT
IDD7A : Operating current: Four bank operation
1. Typical Case: Fro DDR200,266,333: Vdd = 2.5V, T=25’C; For DDR400: Vdd=2.6V,T=25’C
Worst Case : Vdd = 2.7V, T= 10’ C
2. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- B3(166Mhz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- CC(200Mhz,CL = 3) : tCK = 5ns, CL = 3, BL = 4, tRCD = 3*tCK , tRC = 11*tCK, tRAS = 8*tCK
Read : A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing
*50% of data changing at every transfer
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=DESELECT
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
15.0 DDR SDRAM IDD spec table
Symbol
IDD6
st.256Mx4 (K4H1G0638C)
Unit Notes
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
125
125
IDD1
155
155
mA
IDD2P
10
10
mA
mA
IDD2F
60
60
mA
IDD2Q
50
50
mA
IDD3P
35
35
mA
mA
IDD3N
75
75
IDD4R
170
170
mA
IDD4W
175
175
mA
IDD5
225
225
mA
10
10
mA
6
6
mA
370
370
mA
Normal
Low power
IDD7A
Symbol
IDD6
(VDD=2.7V, T = 10°C)
st.128Mx8 (K4H1G0738C)
Unit Notes
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
125
125
mA
IDD1
155
155
mA
IDD2P
10
10
mA
IDD2F
60
60
mA
IDD2Q
50
50
mA
IDD3P
35
35
mA
IDD3N
75
75
mA
IDD4R
170
170
mA
IDD4W
170
170
mA
IDD5
225
225
mA
Normal
10
10
mA
Low power
6
6
mA
370
370
mA
IDD7A
Optional
Optional
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
16.0 AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
V
VREF - 0.31
V
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Specification
Parameter
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.5 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.5 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
4.5 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
4.5 V-ns
VDD
Overshoot
5
Maximum Amplitude = 1.5V
4
3
Volts (V)
2
Area = 4.5V-ns
1
0
-1
-2
-3
Maximum Amplitude = 1.5V
GND
-4
-5
0
0.6875
1.5
2.5
3.5
4.5
5.5
6.3125
7.0
0.5
1.0
2.0
3.0
4.0
5.0
6.0
6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Specification
Parameter
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.2 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
VDDQ
Overshoot
5
Maximum Amplitude = 1.2V
4
3
Volts (V)
2
1
Area = 2.4V-ns
0
-1
-2
-3
Maximum Amplitude = 1.2V
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
19.0 AC Timming Parameters & Specifications
Symbol
Parameter
Row cycle time
A2
(DDR266@CL=2.0)
Min
Max
B0
(DDR266@CL=2.5)
Min
Max
Unit
tRC
65
65
Refresh row cycle time
tRFC
75
75
Row active time
tRAS
45
RAS to CAS delay
tRCD
20
20
tRP
20
20
ns
tRRD
15
15
ns
Row precharge time
Row active to Row active delay
Write recovery time
70K
45
ns
ns
70K
ns
ns
tWR
15
15
ns
tWTR
1
1
tCK
7.5
12
10
12
ns
tCK
7.5
12
7.5
12
ns
-
-
-
-
Clock high level width
tCH
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
tCK
Last data in to Read command
CL=2.0
Clock cycle time
CL=2.5
CL=3.0
tDQSCK
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.5
-
0.5
ns
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
DQS-out access time from CK/CK
Note
Read Postamble
tRPST
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
ns
DQS-in hold time
tWPRE
0.25
0.25
tCK
DQS falling edge to CK rising-setup time
tDSS
0.2
0.2
tCK
DQS falling edge from CK rising-hold time
tDSH
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
tCK
22
13
Address and Control Input setup time(fast)
tIS
0.9
0.9
ns
15, 17~19
Address and Control Input hold time(fast)
tIH
0.9
0.9
ns
15, 17~19
Address and Control Input setup
tIS
1.0
1.0
ns
16~19
ns
16~19
Address and Control Input hold time(slow)
tIH
1.0
Data-out high impedence time from CK/CK
tHZ
-0.75
+0.75
-0.75
1.0
+0.75
ns
11
Data-out low impedence time from CK/CK
tLZ
-0.75
+0.75
-0.75
+0.75
ns
11
Mode register set cycle time
tMRD
15
15
ns
DQ & DM setup time to DQS
tDS
0.5
0.5
ns
j, k
DQ & DM hold time to DQS
tDH
0.5
0.5
ns
j, k
Control & Address input pulse width
tIPW
2.2
2.2
ns
18
DQ & DM input pulse width
tDIPW
1.75
1.75
ns
18
Exit self refresh to non-Read command
tXSNR
75
75
ns
Exit self refresh to read command
tXSRD
200
Refresh interval time
tREFI
Output DQS valid window
tQH
tHP
-tQHS
Clock half period
tHP
tCLmin
or tCHmin
Data hold skew factor
DQS write postamble time
200
7.8
tQHS
-
tHP
-tQHS
-
tCLmin
or tCHmin
0.75
tWPST
0.4
0.6
0.4
Active to Read with Auto precharge
command
tRAP
20
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
tCK
7.8
us
14
-
ns
21
-
ns
20, 21
0.75
ns
21
0.6
tCK
12
tCK
23
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
20.0 System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system
performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
DDR333
DDR266
DDR200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
TBD
TBD
0.5
4.0
V/ns
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
∆tIS
∆tIH
Units
Notes
0.5 V/ns
0
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
∆tDS
∆tDH
Units
Notes
0.5 V/ns
0
0
ps
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
∆tDS
∆tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR266B
DDR200
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
0.67
1.5
e,m
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
21.0 Component Notes
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,
but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be
either a precise representation of the typical system environment nor a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics).
VDDQ
50Ω
Output
(Vout)
30pF
Figure 1 : Timing Reference Load
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to
VREF (or to the crossing point for CK/CK), and parameter specifications are guaranteed for the specified ac input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the dc
input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.2VDDQ is
recognized as LOW.
7. Enables on.chip refresh and address counters.
8. IDD specifications are tested after the device is properly initialized.
9. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference level
for signals other than CK/CK, is VREF.
10. The output timing reference voltage level is VTT.
11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys
tem performance (bus turnaround) will degrade accordingly.
13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ
ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
15. For command/address input slew rate ≥ 1.0 V/ns
16. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
Component Notes
17. For CK & CK slew rate ≥ 1.0 V/ns
18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by
device design or tester correlation.
19. Slew Rate is measured between VOH(ac) and VOL(ac).
20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the
period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into
the clock traces.
21. tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst
case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers.
22. tDQSQ
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle.
23. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and
tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3)
tDAL = 5 clocks
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
22.0 System Notes
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2.
Test point
Output
50Ω
VSSQ
Figure 2 : Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 3.
VDDQ
50Ω
Output
Test point
Figure 3 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example : For typical slew rate, DQ0 is switching
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
d. Evaluation conditions
Typical : 25 °C (T Ambient), VDDQ = 2.5V(for DDR266/333) and 2.6V(for DDR400), typical process
Minimum : 70 °C (T Ambient), VDDQ = 2.3V(for DDR266/333) and 2.5V(for DDR400), slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V(for DDR266/333) and 2.7V(for DDR400), fast - fast process
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and
voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns
as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or
VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4.
Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the
slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(Slew Rate2)}
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this
would result in the need for an increase in tDS and tDH of 100 ps.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotonic.
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
23.0 IBIS : I/V Characteristics for Input and Output Buffers
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Typical
Minimum
Maximum
25×C
70×C
0×C
Vdd/Vddq = 2.5V, typical process
Vdd/Vddq = 2.3V, slow-slow process
Vdd/Vddq = 2.7V, fast-fast process
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
the of the V-I curve of Figure 3 and 4.
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Iout(mA)
160
Maximum
140
120
Typical High
100
80
Typical Low
60
Minimum
40
20
0
0.0
0.5
1.0
1.5
2.0
Pullup Characteristics for Full Strength Output Driver
0 .0
1 .0
2.5
Vout(V)
2 .0
0
-20
Minumum
Typical Low
Iout(mA)
-40
-60
-80
-100
-120
-140
Typical High
-160
-180
Maximum
-200
-220
Pulldown Characteristics for Full Strength Output Driver
Vout(V)
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
Pulldown Current (mA)
Voltage
(V)
Typical
Typical
Low
High
0.1
6.0
0.2
pullup Current (mA)
Typical
Typical
Low
High
9.6
-6.1
9.2
18.2
20.1
13.8
26.6
18.4
29.8
33.0
0.6
34.6
0.7
0.8
Minimum
Maximum
Minimum
Maximum
6.8
4.6
-7.6
-4.6
-10.0
12.2
13.5
-12.2
-14.5
-9.2
-20.0
0.3
18.1
0.4
24.1
26.0
-18.1
-21.2
-13.8
-29.8
33.9
-24.0
-27.7
-18.4
-38.8
0.5
23.0
41.8
-29.8
-34.1
-23.0
-46.8
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
Table 8. Full Strength Driver Characteristics
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
90
Maximum
80
70
Typical High
50
Iout(mA)
Iout(mA)
60
40
Typical Low
Minimum
30
20
10
0
0.0
1.0
2.0
Pullup Characteristics for Weak Output Driver
0.0
1.0
Vout(V)
2.0
0
Iout(mA)
-10
Minumum
Typical Low
-20
-30
-40
-50
-60
Typical High
-70
-80
Maximum
-90
Pulldown Characteristics for Weak Output Driver
Vout(V)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.1 June. 2005
DDR SDRAM stacked 1Gb C-die (x4/x8)
DDR SDRAM
Pulldown Current (mA)
Voltage
(V)
Typical
Typical
Low
High
0.1
3.4
0.2
6.9
pullup Current (mA)
Typical
Typical
Low
High
5.0
-3.5
5.2
9.9
-6.9
Minimum
Maximum
3.8
2.6
7.6
Minimum
Maximum
-4.3
-2.6
-5.0
-8.2
-5.2
-9.9
0.3
10.3
11.4
7.8
14.6
-10.3
-12.0
-7.8
-14.6
0.4
13.6
15.1
10.4
19.2
-13.6
-15.7
-10.4
-19.2
0.5
16.9
18.7
13.0
23.6
-16.9
-19.3
-13.0
-23.6
0.6
19.6
22.1
15.7
28.0
-19.4
-22.9
-15.7
-28.0
0.7
22.3
25.0
18.2
32.2
-21.5
-26.5
-18.2
-32.2
0.8
24.7
28.2
20.8
35.8
-23.3
-30.1
-20.4
-35.8
0.9
26.9
31.3
22.4
39.5
-24.8
-33.6
-21.6
-39.5
1.0
29.0
34.1
24.1
43.2
-26.0
-37.1
-21.9
-43.2
1.1
30.6
36.9
25.4
46.7
-27.1
-40.3
-22.1
-46.7
1.2
31.8
39.5
26.2
50.0
-27.8
-43.1
-22.2
-50.0
1.3
32.8
42.0
26.6
53.1
-28.3
-45.8
-22.3
-53.1
1.4
33.5
44.4
26.8
56.1
-28.6
-48.4
-22.4
-56.1
1.5
34.0
46.6
27.0
58.7
-28.7
-50.7
-22.6
-58.7
1.6
34.3
48.6
27.2
61.4
-28.9
-52.9
-22.7
-61.4
1.7
34.5
50.5
27.4
63.5
-28.9
-55.0
-22.7
-63.5
1.8
34.8
52.2
27.7
65.6
-29.0
-56.8
-22.8
-65.6
1.9
35.1
53.9
27.8
67.7
-29.2
-58.7
-22.9
-67.7
2.0
35.4
55.0
28.0
69.8
-29.2
-60.0
-22.9
-69.8
2.1
35.6
56.1
28.1
71.6
-29.3
-61.2
-23.0
-71.6
2.2
35.8
57.1
28.2
73.3
-29.5
-62.4
-23.0
-73.3
2.3
36.1
57.7
28.3
74.9
-29.5
-63.1
-23.1
-74.9
2.4
36.3
58.2
28.3
76.4
-29.6
-63.8
-23.2
-76.4
2.5
36.5
58.7
28.4
77.7
-29.7
-64.4
-23.2
-77.7
2.6
36.7
59.2
28.5
78.8
-29.8
-65.1
-23.3
-78.8
2.7
36.8
59.6
28.6
79.7
-29.9
-65.8
-23.3
-79.7
Table 9. Weak Driver Characteristics
Rev. 1.1 June. 2005