IPP07N03L IPB07N03L OptiMOS Buck converter series Product Summary Feature •N-Channel •Logic Level •Low On-Resistance R DS(on) VDS 30 V RDS(on) max. SMD version 5.9 mΩ ID 80 A •Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 P- TO220 -3-1 •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for fast switching buck converters Type IPP07N03L Package Ordering Code P- TO220 -3-1 Q67042-S4051 Marking IPB07N03L P- TO263 -3-2 Q67042-S4082 07N03L 07N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 80 TC = 25°C ,1) 80 Pulsed drain current ID puls 320 TC=25°C EAS 30 Repetitive avalanche energy, limited by Tjmax 2) EAR 15 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 150 W Avalanche energy, single pulse mJ ID=20A, V DD=25V, RGS=25Ω kV/µs IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 -55... +175 °C 55/175/56 Page 1 2002-10-17 IPP07N03L IPB07N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 0.68 1 @ min. footprint - - 62 @ 6 cm2 cooling area 3) - - 40 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS=0V, I D=1mA Gate threshold voltage, V GS = VDS ID = 80 µA Zero gate voltage drain current µA IDSS VDS=30V, V GS=0V, T j=25°C - 0.01 1 VDS=30V, V GS=0V, T j=125°C - 10 100 - 1 100 Gate-source leakage current IGSS nA VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ VGS=4.5V, ID=50A - 7 10 VGS=4.5V, ID=50A, SMD version - 6.6 9.7 VGS=10V, ID=50A - 5 6.2 VGS=10V, ID=50A, SMD version - 4.6 5.9 Drain-source on-state resistance4) RDS(on) 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 123A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2002-10-17 IPP07N03L IPB07N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 44 88 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=80A Input capacitance Ciss VGS=0V, VDS =25V, - 1900 2350 Output capacitance Coss f=1MHz - 740 990 Reverse transfer capacitance Crss - 175 265 Gate resistance RG - 2.2 - Ω Turn-on delay time t d(on) VDD=15V, VGS=10V, - 10.4 15.6 ns Rise time tr ID=20A, - 23 35 - 73 109 - 61 91 - 5 7 - 16 25 - 27 34 - 26.4 33 Turn-off delay time t d(off) Fall time tf RG =3.6Ω Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD=15V, ID=20A VDD=15V, ID=20A, nC VGS=0 to 5V Output charge Q oss VDS=15V, ID =20A, nC VGS=0V Gate plateau voltage V(plateau) VDD=15V, ID=20A - 3.1 - V IS TC=25°C - - 80 A - - 320 Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF =lS , - 41 51 ns Reverse recovery charge Qrr diF/dt=100A/µs - 46 58 nC Page 3 2002-10-17 IPP07N03L IPB07N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: VGS≥ 10 V 160 IPP07N03L 90 A W 70 120 60 ID P tot IPP07N03L 100 50 80 40 60 30 40 20 20 10 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp) parameter : D = 0 , T C = 25 °C parameter : D = tp/T 10 3 IPP07N03L 10 1 IPP07N03L K/W A tp = 22.0µs = 10 2 DS (on ) 100 µs 10 -1 R ID ZthJC V DS /I D 10 0 10 -2 D = 0.50 0.20 1 ms 10 1 10 -3 0.10 0.05 10 ms 0.02 single pulse DC 10 -4 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s tp VDS Page 4 2002-10-17 10 0 IPP07N03L IPB07N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C parameter: t p = 80 µs RDS(on) = f (ID) 190 parameter: VGS IPP07N03L Ptot = 150W 20 A d mΩ h i e f g VGS [V] a 3.0 g 140 120 100 b 3.2 c 3.4 d 3.6 e 3.8 f 4.0 g 4.5 h 10.0 f i 80 16 RDS(on) 160 ID IPP07N03L 14 12 10 5.0 8 e 60 6 h d 40 c 20 2 b a 0 0 i 4 1 2 3 4 5 V 6 0 0 8 VGS [V] = d 3.6 e f 3.8 4.0 20 40 g h i 4.5 10.0 5.0 60 80 100 120 A 160 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max gfs = f(ID); Tj=25°C parameter: t p = 80 µs parameter: gfs 160 120 S A 100 90 gfs ID 120 100 80 70 80 60 50 60 40 40 30 20 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS Page 5 0 0 20 40 60 80 120 A ID 2002-10-17 IPP07N03L IPB07N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 50 A, V GS = 10 V parameter: VGS = VDS IPP07N03L 3 15 mΩ V V GS(th) RDS(on) 12 11 10 9 8 1.5 98% 7 1mA 2 6 83µA typ 5 1 4 3 0.5 2 1 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 Tj 180 °C Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 IPP07N03L A pF Ciss C IF 10 2 Coss 10 3 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V VSD VDS Page 6 2002-10-17 3 IPP07N03L IPB07N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: I D = 20 A, V DD = 25 V, RGS = 25 Ω parameter: I D=10 mA 36 30 IPP07N03L V V(BR)DSS E AS mJ 20 34 33 32 15 31 30 10 29 5 28 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 20 A pulsed 16 IPP07N03L V VGS 12 10 8 0.2 VDS max 0.5 VDS max 6 0.8 VDS max 4 2 0 0 10 20 30 40 50 nC 65 Q Gate Page 7 2002-10-17 200 IPP07N03L IPB07N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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