Mitsubishi CM75TU-24H High power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
F
G
E
H
E
G
E
H
R 4 - Mounting
Holes
S
K
L
GuP
EuP
D
GvP
EvP
GwP
EwP
C
GuN
EuN
TC
Measured
Point
v
u
TC
Measured M
Point
GwN
EwN
GvN
EvN
w
N
5 - M5 NUTS
E
H
E
H
K
E
J
J
TAB#110 t=0.5
P
Q
P
GuP
GvP
GwP
EuP
EvP
EwP
U
V
W
GuN
GvN
GwN
EuN
EvN
EwN
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
N
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
4.21
B
3.54±0.01
Millimeters
Dimensions
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified system assembly and thermal management.
Inches
Millimeters
3.75
107.0
K
0.15
90.0±0.25
L
0.67
17.0
102.0
M
1.91
48.5
80.0±0.25
N
0.03
0.8
C
4.02
D
3.15±0.01
E
0.43
11.0
P
0.32
8.1
F
0.91
23.0
Q
1.02
26.0
G
0.47
12.0
R
0.22 Dia.
H
0.85
21.7
S
0.57
J
0.91
23.0
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-24H is a
1200V (VCES), 75 Ampere SixIGBT Module.
5.5 Dia.
Type
Current Rating
Amperes
VCES
Volts (x 50)
14.4
CM
75
24
Sep.1998
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM75TU-24H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
75
Amperes
ICM
150*
Amperes
IE
75
Amperes
Peak Emitter Current**
IEM
150*
Amperes
Maximum Collector Dissipation (Tj < 150°C)
Pc
600
Watts
Storage Temperature
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current**
Mounting Torque, M5 Main Terminal
–
2.5~3.5
N·m
Mounting Torque, M5 Mounting
–
2.5~3.5
N·m
–
680
Grams
Viso
2500
Vrms
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C
–
2.9
3.7
Volts
IC = 75A, VGE = 15V, Tj = 125°C
–
2.85
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 75A, VGE = 15V
–
280
–
nC
Emitter-Collector Voltage*
VEC
IE = 75A, VGE = 0V
–
–
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 75A,
–
–
100
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
Turn-off Delay Time
Times
Fall Time
11
Units
Output Capacitance
VCE = 10V, VGE = 0V
–
Max.
Cies
Switch
–
Typ.
Input Capacitance
nF
–
–
3.7
nF
–
–
2.2
nF
td(off)
RG = 4.2Ω, Resistive
–
–
250
ns
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 75A, diE/dt = -150A/µs
–
–
300
µC
Diode Reverse Recovery Charge
Qrr
IE = 75A, diE/dt = -150A/µs
–
0.41
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/6 Module
Thermal Resistance, Junction to Case
Rth(j-c)D
Per Free-Wheel Diode 1/6 Module
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
Contact Thermal Resistance
Min.
–
Typ.
Max.
Units
0.21
°C/W
–
0.47
°C/W
0.015
–
°C/W
–
Sep.1998
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
150
125
15
12
VGE = 20V
100
11
75
10
50
9
25
8
120
90
60
30
0
0
0
2
4
6
8
10
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
4
8
12
16
0
20
25
50
75
100
125
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
10
IC = 150A
IC = 75A
4
IC = 30A
8
12
16
100
1.0
20
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
1.5
2.0
2.5
3.0
3.5
103
Cres
REVERSE RECOVERY TIME, trr, (ns)
tf
td(on)
tr
101
COLLECTOR CURRENT, IC, (AMPERES)
100
102
102
101
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
102
GATE CHARGE, VGE
102
trr
101
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
di/dt = -150A/µsec
Tj = 25°C
td(off)
102
100
100
10-1
10-1
4.0
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101
Coes
100
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VCC = 600V
VGE = ±15V
RG = 4.2 Ω
Tj = 125°C
Cies
VGE = 0V
0
4
101
101
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
2
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
6
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
8
0
150
102
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
150
SWITCHING TIME, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
IC = 75A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
100
200
300
400
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM75TU-24H
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.21°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.47°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Sep.1998
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