NSS1C201LT1G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device http://onsemi.com 100 VOLTS, 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 2.0 A ICM 3.0 A Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 490 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous Collector Current − Peak 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. DEVICE MARKING VT MG G 1 VT = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS1C201LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 0 1 Publication Order Number: NSS1C201L/D NSS1C201LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −140 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc 100 Vdc 140 Vdc 7.0 nAdc 100 nAdc 50 ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.01 A) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) 150 120 80 40 240 360 V 0.030 0.060 0.090 0.150 V 0.950 V 0.850 Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 230 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 14 pF 110 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS PD, POWER DERATING (W) 0.8 0.7 Note 2 0.6 0.5 0.4 Note 1 0.3 0.2 0.1 0 0 20 40 60 80 100 TJ, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 120 140 NSS1C201LT1G TYPICAL CHARACTERISTICS 400 300 25°C 250 200 150 −55°C 100 0.01 0.1 1 25°C 250 200 150 −55°C 100 0 10 0.1 −55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC/IB = 20 150°C 25°C 0.1 −55°C 0.01 0.001 VBE(sat), BASE−EMITTER SATURATION (V) VBE(sat), BASE−EMITTER SATURATION (V) IC/IB = 10 −55°C 0.8 25°C 0.6 150°C 0.4 0.01 0.1 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage 1.2 1.0 10 1 Figure 4. Collector−Emitter Saturation Voltage 0.001 1 Figure 3. DC Current Gain 25°C 0.2 0.1 Figure 2. DC Current Gain 150°C 0.001 0.01 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.01 0.001 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0.001 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 300 50 50 0 VCE = 4 V 150°C 350 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 350 400 VCE = 2 V 150°C 10 1.2 IC/IB = 50 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage http://onsemi.com 3 10 NSS1C201LT1G 1.2 1 VCE = 2 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 COB, OUTPUT CAPACITANCE (pF) 150 100 50 0 1 2 3 4 5 6 7 8 0.1 1 TJ = 25°C fTEST = 1 MHz 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 80 60 40 20 0.01 90 100 10 TJ = 25°C fTEST = 1 MHz VCE = 2 V 0.001 45 VEB, EMITTER BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) CIB, INPUT CAPACITANCE (pF) fTau, CURRENT GAIN BANDWIDTH (MHz) 0.01 50 TJ = 25°C fTEST = 1 MHz 200 0 0.001 Figure 9. Collector Saturation Region 250 100 0.0001 Figure 8. Base Emitter Voltage 300 120 IC = 0.1 A IB, BASE CURRENT (A) 350 140 0.5 A 0.1 IC, COLLECTOR CURRENT (A) 400 0 1A 0.01 10 3A 2A 0.1 10 mS 1 Thermal Limit 0.1 0.01 1 1 mS 100 mS 0.1 1 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 100 NSS1C201LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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