EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 4.7kW IC(MAX.) R1 EMT5 UMT5 (3) (5) (1) (4) (2) (5) EMG3 (SC-107BB) with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 6) Only the on/off conditions need to be set for operation, making the circuit design easy. 7) Lead Free/RoHS Compliant. UMG3N SOT-353 (SC-88A) (1) lFeatures 1) Built-In Biasing Resistors. 2) Two DTC143T chips in one package. 3) Emitter-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors consist of thin-film resistors (2) (5) (4) (3) FMG3A (SC-74A) lInner circuit EMG3 / UMG3N Base (3) (4) Collector lApplication (1) (4) (3) SMT5 (2) Emitter (2) FMG3A Base (1) Base (3) (5) Collector (2) Collector Emitter (4) Base (5) (1) Collector Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Package size (mm) Taping code EMG3 EMT5 1616 T2R 180 8 8,000 G3 UMG3N UMT5 2021 TR 180 8 3,000 G3 FMG3A SMT5 2928 T148 180 8 3,000 G3 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/6 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2012.06 - Rev.B Data Sheet EMG3 / UMG3N / FMG3A lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC(MAX.)*1 100 mA 150 (Total)*3 mW 300 (Total)*4 mW Tj 150 °C Tstg -55 to +150 °C Collector current Power dissipation EMG3 / UMG3N PD FMG3A Junction temperature Range of storage temperature *2 lElectrical characteristics(Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. Typ. Max. Unit IC= 50mA 50 - - V BVCEO IC= 1mA 50 - - V BVEBO IE= 50mA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 mA Emitter cut-off current IEBO VEB = 4V - - 0.5 mA IC / IB= 5mA / 0.25mA - - 0.15 V 100 250 600 - Collector-emitter saturation voltage VCE(sat) Conditions DC current gain hFE Input resistance R1 - 3.5 4.7 5.9 kW Transition frequency fT *1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz VCE= 5V , IC= 1mA , *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/6 2012.06 - Rev.B Data Sheet EMG3 / UMG3N / FMG3A lElectrical characteristic curves(Ta = 25°C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 100 10 Ta=25ºC COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) VCE=5V 1 0.1 Ta=100ºC 25ºC -40ºC 0.01 0.001 0 0.5 1 1.5 2 BASE TO EMITTER VOLTAGE : VBE (V) IB= 500μA 450μA 400μA 80 350μA 300μA 60 250μA 200μA 40 150μA 100μA 20 0 50μA 0A 0 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/6 2012.06 - Rev.B Data Sheet EMG3 / UMG3N / FMG3A lDimensions (Unit : mm) D EMT5 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/6 2012.06 - Rev.B Data Sheet EMG3 / UMG3N / FMG3A lDimensions (Unit : mm) UMT5 D A e c x Lp L1 A3 S A e e1 l1 y S A1 A b HE E Q S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 INCHES MIN 0.031 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/6 2012.06 - Rev.B Data Sheet EMG3 / UMG3N / FMG3A lDimensions (Unit : mm) SMT5 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 INCHES MIN 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/6 2012.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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