Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTBH0N25J3 BVDSS ID@VGS=10V, TC=25°C 250V ID@VGS=10V, TA=25°C VGS=10V, ID=3A 1.0A 780mΩ VGS=4.5V, ID=2A 735mΩ RDSON(TYP) 3.5A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTBH0N25J3 G：Gate S：Source TO-252(DPAK) G D：Drain D S Ordering Information Device MTBH0N25J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBH0N25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=3A, VDD=50V Repetitive Avalanche Energy@ L=0.1mH Total Power Dissipation @TC=25℃ (Note 1) Total Power Dissipation @TC=100℃ (Note 1) Total Power Dissipation @TA=25℃ (Note 2) Total Power Dissipation @TA=70℃ (Note 2) Operating Junction and Storage Temperature Range Symbol Limits VDS VGS 250 ±20 3.5 2.5 1.0 0.8 8.5 4 9 3 30 15 2.5 1.6 -55~+175 (Note 1) (Note 1) (Note 2) ID (Note 2) (Note 3) (Note 4) (Note 4) (Note 3) IDM IAS EAS EAR PD PDSM Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 5 Thermal Resistance, Junction-to-ambient, max (Note 2) 50 °C/W RθJA Thermal Resistance, Junction-to-ambient, max (Note 4) 110 . Note : 1 The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=2mH, IAS=2A, VGS=10V, VDD=50V 5. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTBH0N25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 3/9 Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. 250 1 - 780 735 6.2 2.5 ±100 1 25 980 960 - - 11.8 1.5 4.7 6 16 28.2 23.4 382 32.3 16.3 - - 0.77 42 58 3.5 8 1 - Unit V nA μA mΩ S Test Conditions VGS=0V, ID=250μA VDS =VGS, ID=250μA VGS=±20V, VDS=0V VDS =200V, VGS =0V VDS =200V, VGS =0V, TJ=125°C VGS =10V, ID=3A VGS =4.5V, ID=2A VDS =15V, ID=3A nC VDS=200V, ID=3A, VGS=10V ns VDS=125V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IS=1A, VGS=0V IF=1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTBH0N25J3 CYStek Product Specification Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 8 ID, Drain Current (A) 7 6 5 4 3.5V BVDSS, Normalized Drain-Source Breakdown Voltage 10V 9V 8V 7V 6V 5V 4.5V 4V VGS=3V 3 2 1.2 1 0.8 0.6 ID=250μA, VGS=0V 1 0.4 0 0 3 6 9 12 VDS, Drain-Source Voltage(V) -75 -50 -25 15 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10000 1000 VGS=3V VGS=4.5V VGS=10V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 100 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3 1600 ID=3A 1400 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 1200 1000 800 600 400 200 2.5 VGS=10V, ID=3A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 780mΩ 0 0 0 MTBH0N25J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 10 0 5 10 15 20 VDS, Drain-Source Voltage(V) 25 -75 -50 -25 30 Gate Charge Characteristics 10 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current VDS=15V 1 0.1 Ta=25°C Pulsed 0.01 0.001 8 6 4 VDS=200V ID=3A 2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 100μs 1ms RDSON Limited 10ms 1 100m 1s 0.1 10 12 DC TC=25°C, Tj=175°C VGS=10V, RθJC=5°C/W Single Pulse 4 ID, Maximum Drain Current(A) 10 4 6 8 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 0 3.5 3 2.5 2 1.5 1 VGS=10V, RθJC=5°C/W 0.5 0 0.01 0.1 MTBH0N25J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 1000 8 900 7 VDS=10V 6 700 Power (W) ID, Drain Current(A) TJ(MAX) =175°C TC=25°C RθJC=5°C/W 800 5 4 3 600 500 400 300 2 200 1 100 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=5°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTBH0N25J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTBH0N25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBH0N25J3 CYStek Product Specification Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 BH0 N25 Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBH0N25J3 CYStek Product Specification