AP6N4R0I
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Lower On-resistance
60V
RDS(ON)
3.99mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
4
70A
S
Description
AP4604 series
AP6N4R0
seriesare
arefrom
fromAdvanced
Advanced Power
Power innovated
innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220
TO-220CFM
package
package
is widelyispreferred
widely for
preferred
all commercialfor all
industrial through hole
commercial-industrial
through
applications.
hole applications.
The lowThe
thermal
mold
resistance and
compound
provides
low package
a high isolation
cost contribute
voltage capability
to the worldwide
and low
popular
package. between the tab and the external heat-sink.
thermal resistance
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
.
Parameter
Rating
Units
60
V
+20
V
Drain Current, VGS @ 10V
4
70
A
Drain Current, VGS @ 10V
4
44
A
280
A
32.8
W
1.92
W
184
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201601051
AP6N4R0I
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
3.99
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=5V, ID=30A
-
52
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
73
117
nC
Qgs
Gate-Source Charge
VDS=30V
-
20
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
29
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
19
-
ns
tr
Rise Time
ID=30A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=3.5Ω
-
41
-
ns
tf
Fall Time
VGS=10V
-
67
-
ns
Ciss
Input Capacitance
VGS=0V
-
3900 6240
pF
Coss
Output Capacitance
VDS=30V
-
2400
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
168
-
pF
Rg
Gate Resistance
-
2.4
4.8
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
65
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
4.Starting Tj=25 C , VDD=30V , L=0.3mH , RG=25Ω
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6N4R0I
200
250
o
160
ID , Drain Current (A)
ID , Drain Current (A)
200
150
V G =6.0V
100
50
120
V G =6.0V
80
40
0
0
0
4
8
12
16
0
20
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
8
I D =30A
I D =30A
V G =10V
T C =25 o C
2.0
6
.
4
Normalized RDS(ON)
RDS(ON) (mΩ)
10V
9.0V
8.0V
7.0V
T C =150 o C
10V
9.0V
8.0V
7.0V
T C = 25 C
1.6
1.2
0.8
0.4
2
5
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
30
I D =250uA
25
Normalized VGS(th)
1.6
IS(A)
20
15
T j =150 o C
T j =25 o C
1.2
0.8
10
0.4
5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6N4R0I
f=1.0MHz
8000
I D =30A
V DS =30V
10
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4000
C iss
4
C oss
2000
2
C rss
0
0
0
20
40
60
80
100
1
120
21
41
61
81
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this area
limited by RDS(ON)
ID (A)
100
10us
100us
10
.
1ms
1
T C =25 o C
Single Pulse
10ms
DC
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
Fig 9. Maximum Safe Operating Area
0.1
1
Fig 10. Effective Transient Thermal Impedance
100
200
T j =25 o C
V DS =5V
80
T j =150 o C
160
ID , Drain Current (A)
ID , Drain Current (A)
0.01
t , Pulse Width (s)
60
40
20
120
80
40
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP6N4R0I
10
60
T j =25 o C
50
PD, Power Dissipation(W)
RDS(ON) (mΩ)
8
6
4
V GS =10V
40
30
20
2
10
0
0
0
50
100
150
0
200
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
2
I D =1mA
Normalized BVDSS
1.6
1.2
.
0.8
0.4
0
-100
-50
T
0
j
50
100
150
, Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
AP6N4R0I
MARKING INFORMATION
Part Number
6N4R0
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6