MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM150TU-12H ● IC ................................................................... 150A ● VCES .......................................................... 600V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 107 90 ±0.25 23 12 Dimensions in mm 4–φ5.5 MOUNTING HOLES CM G E 12 11 G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 P 0.5 G 48.5 11 14.4 21.7 E N 3.75 G U 5–M5NUTS TC measured point 11 21.7 E GvP EvP GwP EwP U V W GuN EuN GvN EvN GwN EwN CIRCUIT DIAGRAM +1 29 –0.5 0.8 11 GuP EuP TC measured point 2.8 8.1 7.1 4 LABEL 26 102 80 ±0.25 11 G 17 P N GuP EuP GvP EvP GwP EwP (4) 3.75 12 Feb. 2009 1 MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage Note 1. 2. 3. 4. 5. 6. (Note 1) Ratings Unit 600 ±20 150 300 150 300 600 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Contact thermal resistance (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 15mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.4 2.6 — — — 300 — — — — — — 0.36 — — 0.5 3.0 — 13.2 7.2 2 — 100 350 300 300 2.6 160 — 0.21 0.47 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W — 0.09 — K/W Item ICES Rth(c-f) VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE = ±15V RG = 4.2Ω Resistive load IE = 150A, VGE = 0V IE = 150A, die / dt = –300A / µs Junction to case, IGBT part (Per 1/6 module) Junction to case, FWDi part (Per 1/6 module) Case to heat sink, conductive grease applied (Per 1/6 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 250 300 14 VGE=20 (V) 13 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 300 Tj=25°C 12 200 15 150 11 100 10 50 9 VCE = 10V 250 200 150 100 50 Tj = 25°C Tj = 125°C 8 0 2 4 6 8 0 10 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 50 100 150 200 250 Tj = 25°C 8 6 IC = 300A 4 IC = 150A 2 IC = 60A 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 0 300 103 EMITTER CURRENT IE (A) 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 3 2 102 7 5 3 2 7 VGE = 0V 5 3 2 101 7 5 Cies 3 2 100 Coes 3 2 Cres 7 5 3.0 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 101 0.6 1.0 1.4 1.8 2.2 2.6 Feb. 2009 3 MITSUBISHI IGBT MODULES CM150TU-12H HIGH POWER SWITCHING USE INSULATED TYPE 2 td(off) 102 7 5 td(on) 3 2 tr VCC = 300V VGE = ±15V RG = 4.2Ω 101 7 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 2 3 5 7 102 2 3 2 5 5 3 3 2 2 trr 102 7 5 101 7 5 lrr 3 3 2 2 101 1 10 5 7 103 2 3 5 7 102 100 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C Per unit base = Rth(j – c) = 0.21K/W 100 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 102 103 –di/dt = 300A/µs 7 7 Tj = 25°C 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) tf 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 5 Tj = 125°C REVERSE RECOVERY TIME trr (ns) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.47K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A 15 VCC = 200V VCC = 300V 10 5 0 0 100 200 300 400 GATE CHARGE QG (nC) Feb. 2009 4