Jiangsu B772 Transistor (pnp) Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
B772
SOT-89
TRANSISTOR (PNP)
1. BASE
FEATURES
Power dissipation
2. COLLETOR
PCM:
500
1
mW (Tamb=25℃)
2
3. EMITTER
Collector current
-3
A
ICM:
Collector-base voltage
-40
V
V(BR)CBO:
Operating and storage junction temperature range
3
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
CLASSIFICATION OF hFE(1)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA , IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 µA, IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40 V, IE=0
-1
µA
Collector cut-off current
ICEO
VCE=-30 V, IB=0
-10
µA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
µA
hFE(1)
VCE= -2V, IC= -1A
60
hFE(2)
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
V
400
DC current gain
VCE= -5V,
Transition frequency
C=-0.1A
fT
50
MHz
f = 10MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
Similar pages