MMT05B230T3, MMT05B260T3, MMT05B310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD http://onsemi.com These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. • High Surge Current Capability: 50 Amps 10 x 1000 µsec, for Controlled Temperature Environments • The MMT05B230T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation • Surface Mount Technology (SMT) • Indicates UL Registered − File #E210057 • Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG; MMT05B310T3: RPBJ, and Date Code BIDIRECTIONAL TSPD ( 50 AMP SURGE 265 thru 365 VOLTS MT1 Symbol Off−State Voltage − Maximum MMT05B230T3 MMT05B260T3 MMT05B310T3 VDM Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1. and 2.) (−25°C Initial Temperature) 8 x 20 µsec 10 x 160 µsec 10 x 560 µsec 10 x 1000 µsec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, R = 1.0, L = 1.5 µH, C = 1.67 µF, Ipk = 110A Value MARKING DIAGRAMS YWW RPBx RPBx x Y WW Unit Volts 170 200 270 150 100 70 50 di/dt 150 A/µs 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 7 = Specific Device Code = F, G or J = Year = Work Week ORDERING INFORMATION A(pk) IPPS1 IPPS2 IPPS3 IPPS4 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating ) Device Package Shipping† MMT05B230T3 SMB 12mm Tape and Reel (2.5K/Reel) MMT05B260T3 SMB 12mm Tape and Reel (2.5K/Reel) MMT05B310T3 SMB 12mm Tape and Reel (2.5K/Reel) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MMT05B230T3/D MMT05B230T3, MMT05B260T3, MMT05B310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 µsec @ 25°C) PPK 2000 W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) Symbol Min Typ Max MMT05B230T3 MMT05B260T3 MMT05B310T3 − − − − − − 265 320 365 MMT05B230T3 MMT05B260T3 MMT05B310T3 − − − − − − 280 340 400 MMT05B230T3 MMT05B260T3 MMT05B310T3 − − − − − − 265 320 365 MMT05B230T3 MMT05B260T3 MMT05B310T3 − − − − − − 280 340 400 − 0.08 − − − − 190 240 280 − − − V(BO) Unit Volts (+65°C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kΩ, t = 0.5 cycle) (Note 3.) V(BO) Volts (+65°C) Breakover Voltage Temperature Coefficient dV(BO)/dTJ Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) MMT05B230T3 MMT05B260T3 MMT05B310T3 %/°C Volts Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 µA On−State Voltage (IT = 1.0 A) (PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3.) VT − 1.53 3.0 Volts Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) Both polarities IBO − 230 − mA Holding Current (Both polarities) VS = 500 Volts; IT (Initiating Current) = 1.0 Amp IH 150 340 − mA dv/dt 2000 − − V/µs CO − − 22 53 − 75 pF (Note 3.) Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) 3. Measured under pulse conditions to reduce heating. http://onsemi.com 2 MMT05B230T3, MMT05B260T3, MMT05B310T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM IH ID1 VD2 V(BR) 340 V BR , BREAKDOWN VOLTAGE (VOLTS) I D1, OFF−STATE CURRENT (µ A) I(BO) ID2 + Voltage VD1 100 VD1 = 50V 10 1 0.1 0.01 V(BO) 0 20 40 60 80 100 TEMPERATURE (°C) 120 320 280 260 Figure 1. Off−State Current versus Temperature MMT05B260T3 240 220 MMT05B230T3 200 180 160 − 50 140 MMT05B310T3 300 −25 0 25 50 TEMPERATURE (°C) 75 100 125 Figure 2. Breakdown Voltage versus Temperature http://onsemi.com 3 380 1000 360 900 340 I H , HOLDING CURRENT (mA) V BO , BREAKOVER VOLTAGE (VOLTS) MMT05B230T3, MMT05B260T3, MMT05B310T3 MMT05B310T3 320 300 280 MMT05B260T3 260 240 MMT05B230T3 800 700 600 500 400 300 200 220 200 − 50 − 25 0 25 50 TEMPERATURE (°C) 75 100 100 − 50 125 Figure 3. Breakover Voltage versus Temperature −25 0 25 50 TEMPERATURE (°C) 75 100 125 Figure 4. Holding Current versus Temperature Peak Value 100 CURRENT (A) Ipp − PEAK PULSE CURRENT − %Ipp 100 tr = rise time to peak value tf = decay time to half value Half Value 50 1 0.001 0 0 tr 10 tf TIME (s) Figure 5. Exponential Decay Pulse Waveform 0.01 0.1 1 TIME (sec) 10 100 Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 4 MMT05B230T3, MMT05B260T3, MMT05B310T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 5 TELECOM EQUIPMENT MMT05B230T3, MMT05B260T3, MMT05B310T3 PACKAGE DIMENSIONS SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C−01 ISSUE A S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H J SOLDERING FOOTPRINT* 0.089 2.261 0.108 2.743 inches mm 0.085 2.159 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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