Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
General Description
Features
The AP2114 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 1A (Min) continuous load current.
•
•
•
•
The AP2114 features low power consumption.
•
The AP2114 is available in 1.2V, 1.5V, 1.8V, 2.5V
and 3.3V regulator output and 0.8V to 5V adjustable
output, and available in excellent output accuracy
±1.5%, it is also available in an excellent load
regulation and line regulation performance.
•
•
•
The AP2114 is available in standard packages of
SOT-223, TO-252-2 (1), TO-252-2 (3), TO-252-2 (4),
TO-263-3, SOIC-8 and PSOP-8.
•
•
•
•
•
AP2114
Output Voltage Accuracy: ±1.5%
Output Current: 1A (Min)
Fold-back Short Current Protection: 50mA
Low Dropout Voltage (3.3V): 450mV (Typ)
@IOUT=1A
Stable with 4.7μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
Excellent Line Regulation: 0.02%/V (Typ),
0.1%/V (Max) @ IOUT=30mA
Excellent Load Regulation: 0.2%A (Typ) @
IOUT=1mA to 1A
Low Quiescent Current: 60μA (1.2V/1.5V/1.8V
/2.5V/ADJ)
Low Output Noise: 30μVRMS
PSRR: 68dB @ Freq=1KHz (1.2V/1.5V/1.8V
/ADJ)
OTSD Protection
Operating Temperature Range: -40°C to 85°C
ESD: MM 400V, HBM 4000V
Applications
•
•
•
SOT-223
TO-252-2 (3)
LCD Monitor
LCD TV
STB
TO-263-3
TO-252-2 (4)
TO-252-2 (1)
SOIC-8
PSOP-8
Figure 1. Package Types of AP2114
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
1
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Pin Configuration
H/HA Package
(SOT-223)
H
S Package
(TO-263-3)
HA
D/DA Package
D
DA
(TO-252-2 (1))
VOUT
(TO-252-2 (3))
(TO-252-2 (1))
3
VIN
3
VIN
3
VOUT
2
VOUT VOUT
2
VOUT GND
2
GND
1
GND
1
GND
1
VIN
(TO-252-2 (4))
VOUT
3
VIN
2
VOUT
1
GND
GND
GND
1
8
EN
GND
VOUT
2
7
ADJ
GND
3
GND
VIN
4
1
8
EN
VIN
1
8
VOUT
VOUT
2
7
GND GND
2
7
VIN
6
GND GND
4
5
GND
For Fixed Versions
EN
VOUT
2
GND
1
VIN
3
VOUT
2
GND
1
VIN
MP Package
(PSOP-8)
GND
3
GND
3
(TO-252-2 (4))
M Package
(SOIC-8)
GND
(TO-252-2 (3))
3
4
6
5
For Adjustable Version
VIN
1
8
VOUT
GND
GND
2
7
GND
6
GND
GND
3
6
ADJ
5
GND
EN
4
5
GND
For Fixed Versions
For Adjustable Version
Figure 2. Pin Configuration of AP2114 (Top View)
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Pin Descriptions
Pin Number
SOT-223 (H),
TO-263-3,
TO-252-2 (1) (D)
TO-252-2 (3) (D)
TO-252-2 (4) (D)
1
2
3
SOT-223 (HA),
TO-252-2 (1) (DA)
TO-252-2 (3) (DA)
TO-252-2 (4) (DA)
SOIC-8,
PSOP-8
(Fixed)
SOIC-8,
PSOP-8
(ADJ)
Pin
Name
2
3
1
1, 3, 5, 6, 7
2
4
2, 3, 5, 7
8
1
GND
VOUT
VIN
8
4
EN
6
ADJ
Function
Ground
Regulated Output
Input Voltage Pin
Chip Enable, H–Normal
Work, L– Shutdown Output
Adjust Output
Functional Block Diagram
EN
(8)
3 (4) {1}
Shutdown
Logic
VIN
Foldback
Current Limit
Thermal
Shutdown
2 (2) {3}
VOUT
3MΩ
VREF
GND
1 (1 , 3 , 5 , 6 , 7) {2}
A (B) {C}
A : SOT- 223 (H) , TO-263-3 , TO- 252- 2 (1)/(3)/(4)(D)
B : SOIC-8 , PSOP-8
C: SOT- 223 (HA) , TO- 252- 2 (1)/(3)/(4) (DA)
For Fixed Versions
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Functional Block Diagram (Continued)
EN
4
1
Shutdown
Logic
Thermal
Shutdown
VIN
Foldback
Current Limit
3 MΩ
8
VREF
VOUT
6
2, 3, 5, 7
ADJ
GND
SOIC-8 , PSOP-8
For ADJ Version
Figure 3. Functional Block Diagram of AP2114
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
4
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Ordering Information
AP2114
Package
Circuit Type
G1: Green
Package
H/HA: SOT-223
D/DA: TO-252-2 (1)/(3)/(4)
S: TO-263-3
M: SOIC-8
MP: PSOP-8
Blank: Tube
TR: Tape & Reel
Temperature
Range
SOT-223
-40 to 85°C
SOT-223
-40 to 85°C
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
-40 to 85°C
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
-40 to 85°C
TO-263-3
-40 to 85°C
SOIC-8
-40 to 85°C
Output
Voltage
1.2V (H)
1.5V (H)
1.8V (H)
2.5V (H)
3.3V (H)
1.2V (HA)
1.5V (HA)
1.8V (HA)
2.5V (HA)
3.3V (HA)
1.2V (D)
1.5V (D)
1.8V (D)
2.5V (D)
3.3V (D)
1.2V (DA)
1.5V (DA)
1.8V (DA)
2.5V (DA)
3.3V (DA)
1.2V
1.5V
1.8V
2.5V
3.3V
1.2V
1.5V
1.8V
2.5V
3.3V
ADJ
Jan. 2013
-
1.2: Fixed Output 1.2V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
ADJ: ADJ Output
Part Number
AP2114H-1.2TRG1
AP2114H-1.5TRG1
AP2114H-1.8TRG1
AP2114H-2.5TRG1
AP2114H-3.3TRG1
AP2114HA-1.2TRG1
AP2114HA-1.5TRG1
AP2114HA-1.8TRG1
AP2114HA-2.5TRG1
AP2114HA-3.3TRG1
AP2114D-1.2TRG1
AP2114D-1.5TRG1
AP2114D-1.8TRG1
AP2114D-2.5TRG1
AP2114D-3.3TRG1
AP2114DA-1.2TRG1
AP2114DA-1.5TRG1
AP2114DA-1.8TRG1
AP2114DA-2.5TRG1
AP2114DA-3.3TRG1
AP2114S-1.2TRG1
AP2114S-1.5TRG1
AP2114S-1.8TRG1
AP2114S-2.5TRG1
AP2114S-3.3TRG1
AP2114M-1.2TRG1
AP2114M-1.5TRG1
AP2114M-1.8TRG1
AP2114M-2.5TRG1
AP2114M-3.3TRG1
AP2114M-ADJG1
AP2114M-ADJTRG1
Rev. 2. 2
Marking ID
Packing
Type
GH12C
GH16G
GH12D
GH14C
GH12E
GH13B
GH16H
GH14D
GH14E
GH14F
AP2114D-1.2G1
AP2114D-1.5G1
AP2114D-1.8G1
AP2114D-2.5G1
AP2114D-3.3G1
AP2114DA-1.2G1
AP2114DA-1.5G1
AP2114DA-1.8G1
AP2114DA-2.5G1
AP2114DA-3.3G1
AP2114S-1.2G1
AP2114S-1.5G1
AP2114S-1.8G1
AP2114S-2.5G1
AP2114S-3.3G1
2114M-1.2G1
2114M-1.5G1
2114M-1.8G1
2114M-2.5G1
2114M-3.3G1
2114M-ADJG1
2114M-ADJG1
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tube
Tape & Reel
BCD Semiconductor Manufacturing Limited
5
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Ordering Information (Continued)
Package
Temperature
Range
PSOP-8
-40 to 85°C
Output
Voltage
1.2V
1.5V
1.8V
2.5V
3.3V
ADJ
Part Number
AP2114MP-1.2TRG1
AP2114MP-1.5TRG1
AP2114MP-1.8TRG1
AP2114MP-2.5TRG1
AP2114MP-3.3TRG1
AP2114MP-ADJG1
AP2114MP-ADJTRG1
Marking ID
2114MP-1.2G1
2114MP-1.5G1
2114MP-1.8G1
2114MP-2.5G1
2114MP-3.3G1
2114MP-ADJG1
2114MP-ADJG1
Packing
Type
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tube
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
VIN
6.5
V
Power Supply Voltage
Operating Junction Temperature
Range
Storage Temperature Range
TJ
150
ºC
TSTG
-65 to 150
ºC
Lead Temperature (Soldering, 10sec)
TLEAD
260
ºC
Thermal Resistance （Junction to
Ambient）(No Heatsink)
θJA
SOIC-8
144
PSOP-8
143
SOT-223
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
TO-263-3
128
°C/W
90
73
ESD (Machine Model)
400
V
ESD (Human Body Model)
4000
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient
Range
Jan. 2013
Temperature
Symbol
Min
Max
Unit
VIN
2.5
6.0
V
TA
-40
85
°C
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
7
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics
AP2114-1.2 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Input Voltage
Test Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
IOUT(MAX)
VIN=2.5V, VOUT=1.182V to 1.218V
Load Regulation
△VOUT/VOUT
△IOUT
VIN=2.5V, 1mA ≤ IOUT ≤1A
Line Regulation
△VOUT/VOUT
△VIN
2.5V≤VIN≤6V, IOUT=30mA
Dropout Voltage
VDROP
Quiescent Current
IQ
Supply
Rejection
Output Voltage
Temperature Coefficient
Short Current Limit
Max
Unit
VOUT
×98.5%
1.2
VOUT
×101.5%
V
6.0
V
PSRR
△VOUT/VOUT
△T
ISHORT
IOUT=1.0A
VIN=2.5V, IOUT=0mA
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
1300
mV
60
75
μA
VOUT=0V
50
mA
30
μVRMS
Standby Current
ISTD
VIN=2.5V, VEN in OFF mode
Thermal Resistance
(Junction to Case)
1200
ppm/°C
Enable logic low, regulator off
Shutdown
%/V
±30
VIL
Shutdown
0.1
IOUT=30mA, TA =-40°C to 85°C
VEN Low Voltage
RDCHG
0.02
dB
Enable logic high, regulator on
VOUT Discharge Resistor
%/A
68
VIH
RPD
1
f=1KHz
VEN High Voltage
tS
0.2
68
10Hz ≤ f ≤100kHz (No Load)
EN Pull Down Resistor
A
f=100Hz
VNOISE
Start-up Time
1
-0.1
RMS Output Noise
Thermal
Temperature
Thermal
Hysteresis
Typ
VIN
Maximum Output Current
Power
Ratio
Min
No Load
Set EN pin at Low
1.5
0.4
0.01
μA
20
μs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
PSOP-8
SOT-223
TO-252-2 (1) /(3) /(4)
TO-263-3
74.6
43.7
50.9
35
22
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
8
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-1.5 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Input Voltage
Test Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
IOUT(MAX)
VIN=2.5V, VOUT=1.478V to 1.523V
Load Regulation
△VOUT/VOUT
△IOUT
VIN=2.5V, 1mA ≤ IOUT ≤1A
Line Regulation
△VOUT/VOUT
△VIN
2.5V≤VIN≤6V, IOUT=30mA
Dropout Voltage
VDROP
Quiescent Current
IQ
Supply
Rejection
Output Voltage
Temperature Coefficient
Short Current Limit
Max
Unit
VOUT
×98.5%
1.5
VOUT
×101.5%
V
6.0
V
PSRR
△VOUT/VOUT
△T
ISHORT
%/A
0.02
0.1
%/V
IOUT=1.0A
800
1000
mV
VIN=2.5V, IOUT=0mA
60
75
μA
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
-0.1
f=100Hz
68
f=1KHz
68
dB
IOUT=30mA, TA =-40°C to 85°C
±30
ppm/°C
VOUT=0V
50
mA
30
μVRMS
10Hz ≤ f ≤100kHz (No Load)
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=2.5V, VEN in OFF mode
tS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
A
1
VNOISE
Start-up Time
1
0.2
RMS Output Noise
Thermal
Temperature
Thermal
Hysteresis
Typ
VIN
Maximum Output Current
Power
Ratio
Min
No Load
Set EN pin at Low
1.5
0.4
0.01
μA
20
μs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
PSOP-8
SOT-223
TO-252-2 (1) /(3) /(4)
TO-263-3
74.6
43.7
50.9
35
22
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
9
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-1.8 Electrical Characteristics (Note 2)
(VIN=2.8V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Maximum Output Current
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Power
Ratio
Supply
IOUT(MAX)
IQ
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Test Conditions
VIN =2.8V, 1mA ≤ IOUT ≤ 30mA
VIN=2.8V, VOUT=1.773V to 1.827V
Min
Typ
Max
Unit
VOUT
×98.5%
1.8
VOUT
×101.5%
V
1.0
VIN=2.8V, 1mA ≤ IOUT ≤1A
A
0.2
1.0
%/A
0.02
0.1
%/V
IOUT=1.0A
500
700
mV
VIN=2.8V, IOUT=0mA
60
75
μA
2.8V≤VIN≤6V, IOUT=30mA
Ripple 1Vp-p
VIN=2.8V,
IOUT=100mA
-0.1
f=100Hz
68
f=1KHz
68
dB
IOUT=30mA, TA =-40°C to 85°C
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No load)
30
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=2.8V, VEN in OFF mode
Start-up Time
tS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
Set EN pin at Low
1.5
0.4
0.01
μA
20
μs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
74.6
PSOP-8
43.7
SOT-223
50.9
TO-252-2 (1) /(3) /(4)
35
TO-263-3
22
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
10
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-2.5 Electrical Characteristics (Note 2)
(VIN=3.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Maximum Output Current
IOUT(MAX)
Test Conditions
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
VIN=3.5V, VOUT=2.463V to 2.537V
Load Regulation
△VOUT/VOUT
△IOUT
Vout=2.5V, VIN=Vout+1V
1mA ≤ IOUT ≤1A
Line Regulation
△VOUT/VOUT
△VIN
3.5V≤VIN≤6V, IOUT=30mA
Dropout Voltage
VDROP
Quiescent Current
IQ
Power
Ratio
Supply
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Min
Typ
Max
Unit
VOUT
×98.5%
2.5
VOUT
×101.5%
V
1.0
A
0.2
1.0
%/A
0.02
0.1
%/V
IOUT =1A
450
750
mV
VIN=3.5V, IOUT=0mA
60
80
μA
Ripple 1Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
-0.1
dB
IOUT=30mA
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz
30
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=3.5V, VEN in OFF mode
Start-up Time
tS
EN Pull Down Resistor
RPD
VOUT Discharge Resistor
RDCHG
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
Set EN pin at Low
1.5
0.4
0.01
μA
20
μs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
74.6
PSOP-8
43.7
SOT-223
50.9
TO-252-2 (1) /(3) /(4)
35
TO-263-3
22
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
11
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-3.3 Electrical Characteristics (Note 2)
(VIN=4.3V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Output Voltage
VOUT
Maximum Output Current
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Power
Ratio
Supply
IOUT(MAX)
IQ
Rejection
Output Voltage
Temperature Coefficient
PSRR
△VOUT/VOUT
△T
Test Conditions
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
VIN =4.3V, VOUT=3.25V to 3.35V
Min
Typ
Max
Unit
VOUT
×98.5%
3.3
VOUT
×101.5%
V
1.0
VIN=4.3V, 1mA ≤ IOUT ≤1A
A
0.2
1.0
%/A
0.02
0.1
%/V
IOUT=1A
450
750
mV
VIN=4.3V, IOUT=0mA
65
90
μA
Ripple 1Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
65
f=1KHz
65
4.3V≤VIN≤6V, IOUT=30mA
-0.1
dB
IOUT=30mA
±30
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No load)
30
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=4.3V, VEN in OFF mode
Start-up Time
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
tS
No Load
RPD
RDCHG
Set EN pin at Low
1.5
0.4
0.01
μA
20
μs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
74.6
PSOP-8
43.7
SOT-223
50.9
TO-252-2 (1) /(3) /(4)
35
TO-263-3
22
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
12
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Electrical Characteristics (Continued)
AP2114-ADJ Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Reference Voltage
VREF
Input Voltage
VIN
Maximum Output Current
IOUT(MAX)
Test Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
VIN=2.5V, VOUT= 0.788V to 0.812V
Load Regulation
△VOUT/VOUT
△IOUT
VIN=2.5V, 1mA ≤ IOUT ≤1A
Line Regulation
△VOUT/VOUT
△VIN
2.5V≤VIN≤6V, IOUT=30mA
Quiescent Current
Power
Ratio
Supply
IQ
Rejection
Output Voltage
Temperature Coefficient
Short Current Limit
PSRR
△VOUT/VOUT
△T
ISHORT
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
V
6.0
V
1
A
0.2
1
%/A
0.02
0.1
%/V
60
75
μA
dB
IOUT=30mA, TA =-40°C to 85°C
±30
ppm/°C
VOUT=0V
50
mA
30
μVRMS
VEN Low Voltage
VIL
Enable logic low, regulator off
Standby Current
ISTD
VIN=2.5V, VEN in OFF mode
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
VREF
×101.5%
68
Enable logic high, regulator on
RDCHG
0.8
f=1KHz
VIH
VOUT Discharge Resistor
VREF
×98.5%
68
VEN High Voltage
RPD
Unit
f=100Hz
10Hz ≤ f ≤100kHz (No Load)
EN Pull Down Resistor
Max
VIN=2.5V, IOUT=0mA
VNOISE
tS
Typ
-0.1
RMS Output Noise
Start-up Time
Min
No Load
Set EN pin at Low
1.5
0.4
0.01
μA
20
μs
3.0
MΩ
60
Ω
TOTSD
160
THYOTSD
25
θJC
1.0
V
°C
SOIC-8
PSOP-8
74.6
43.7
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
13
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics
400
500
AP2114_1.2V
VIN=2.5V
450
O
TA=-40 C
Ground Current (μA)
Ground Current (μA)
400
AP2114_1.8V
VIN=2.8V
CIN=4.7μF
COUT=4.7μF
350
O
350
TA=25 C
300
TA=85 C
O
250
200
150
300
250
200
150
O
TA=-40 C
O
100
TA=25 C
100
O
TA=85 C
50
50
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0
0
0.0
0.2
0.4
0.6
0.8
0.0
1.0
0.2
Figure 4. Ground Current vs. Output Current
0.6
0.8
1.0
Figure 5. Ground Current vs. Output Current
500.0
400
AP2114_2.5V
VIN=3.5V
350
450.0
CIN=4.7μF
300
AP2114_3.3V
VIN=4.3V
400.0
Ground Current (μA)
Ground Current (μA)
0.4
Output Current (A)
Output Current (A)
COUT=4.7μF
250
200
150
O
TA=-40 C
100
O
O
TA=85 C
Continuous Airflow 10scfm
300.0
250.0
200.0
O
150.0
TA=-40 C
O
TA=25 C
100.0
TA=25 C
50
350.0
O
50.0
TA=85 C
Continuous Airflow 10scfm
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
0.0
Output Current (A)
0.4
0.6
0.8
1.0
Output Current (A)
Figure 6. Ground Current vs. Output Current
Jan. 2013
0.2
Figure 7. Ground Current vs. Output Current
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
14
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
100
100
AP2114_1.2V
VIN=2.5V
Quiescent Current (μA)
Quiescent Current (μA)
90
AP2114_1.8V
VIN=2.8V
90
IOUT=0mA
80
70
60
50
No Load
CIN=4.7μF
80
70
COUT=4.7μF
60
50
40
30
20
40
10
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0
30
-40
-20
0
20
40
60
-40
80
-20
0
20
40
60
80
100
120
O
Temperature ( C)
O
Temperature ( C)
Figure 9. Quiescent Current vs. Temperature
100
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
AP2114_2.5V
VIN=3.5V
AP2114_3.3V
VIN=4.3V
90
Quiescent Current (μA)
Quiescent Current (μA)
Figure 8. Quiescent Current vs. Temperature
No Load
CIN=4.7μF
COUT=4.7μF
IOUT=0mA
80
70
60
50
40
Continuous Airflow 10scfm
Continuous Airflow 10scfm
30
-40
-20
0
20
40
60
80
100
-40
120
0
20
40
60
80
O
Figure 10. Quiescent Current vs. Temperature
Jan. 2013
-20
Temperature ( C)
O
Temperature ( C)
Figure 11. Quiescent Current vs. Temperature
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
15
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
100
110
AP2114_1.2V
IOUT=0mA
90
AP2114_1.8V
IOUT=0mA
100
80
Quiescent Current (μA)
Quiescent Current (μA)
O
TA= -40 C
O
TA= 25 C
70
O
TA= 85 C
60
50
40
30
o
TA=25 C
90
o
TA=-40 C
80
o
TA=85 C
70
60
50
40
20
Continuous Airflow 10scfm
Continuous Airflow 10scfm
10
30
2
3
4
5
6
2.5
3.0
3.5
Input Voltage (V)
4.0
4.5
5.0
5.5
Input Voltage (V)
Figure 12. Quiescent Current vs. Input Voltage
Figure 13. Quiescent Current vs. Input Voltage
110
110
AP2114_2.5V
IOUT=0mA
100
AP2114_3.3V
IOUT=0mA
100
o
TA=25 C
90
Quiescent Current (μA)
Quiescent Current (μA)
6.0
o
TA=-40 C
80
o
TA=85 C
70
60
50
O
TA= 25 C
80
O
TA= 85 C
70
60
50
40
40
O
TA= -40 C
90
Continuous Airflow 10scfm
Continuous Airflow 10scfm
30
30
2.5
3.0
3.5
4.0
4.5
5.0
5.5
3.5
6.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 14. Quiescent Current vs. Input Voltage
Jan. 2013
4.0
Figure 15. Quiescent Current vs. Input Voltage
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
16
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
1.90
1.216
AP2114_1.2V
AP2114_1.8V
VIN=2.8V
1.208
IOUT=10mA
1.86
CIN=4.7μF
IOUT=100mA
1.84
COUT=4.7μF
1.204
IOUT=500mA
IOUT=1000mA
1.200
1.196
1.192
Output Voltage (V)
Output Voltage (V)
1.88
VIN=2.5V
1.212
IOUT=10mA
IOUT=100mA
IOUT=500mA
IOUT=1000mA
1.82
1.80
1.78
1.76
1.188
1.74
1.184
Continuous Airflow 10scfm
-40
-20
0
Continuous Airflow 10scfm
1.72
1.180
20
40
60
1.70
80
-40
-20
0
20
40
60
80
O
O
Temperature ( C)
Temperature ( C)
Figure 16. Output Voltage vs. Temperature
Figure 17. Output Voltage vs. Temperature
3.35
2.54
IOUT=10mA
IOUT=100mA
3.33
Output Voltage (V)
2.52
Output Voltage (V)
AP2114_3.3V
VIN=4.3V
3.34
2.50
2.48
AP2114_2.5V
VIN=3.5V
2.46
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
2.44
3.31
3.30
3.29
3.27
IOUT=500mA
Continuous Airflow 10scfm
IOUT=1000mA
3.28
IOUT=100mA
2.42
IOUT=500mA
3.32
3.26
IOUT=1000mA
Continuous Airflow 10scfm
3.25
2.40
-40
-20
0
20
40
60
80
-40
0
20
40
60
80
Temperature ( C)
Temperature ( C)
Figure 18. Output Voltage vs. Temperature
Jan. 2013
-20
O
O
Figure 19. Output Voltage vs. Temperature
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
17
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
2.0
1.6
AP2114_1.2V
1.8
1.4
1.4
Output Voltage (V)
Output Voltage (V)
1.6
1.2
1.0
O
0.8
TA=-40 C
O
TA=25 C
0.6
O
TA=85 C
0.4
0.2
Continuous Airflow 10scfm
1.2
o
2
3
4
o
TA=85 C
0.6
CIN=4.7μF
0.4
COUT=4.7μF
0.2
IOUT=10mA
0.0
5
TA=25 C
0.8
0.0
1
AP2114_1.8V
o
TA=-40 C
1.0
CIN=4.7μF
COUT=4.7μF
0.5
6
IOUT=10mA
Continuous Airflow 10scfm
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 20. Output Voltage vs. Input Voltage
Figure 21. Output Voltage vs. Input Voltage
4.0
AP2114_3.3V
2.5
Output Voltage (V)
3.5
Output Voltage (V)
2.0
AP2114_2.5V
CIN=4.7μF
1.5
COUT=4.7μF
IOUT=10mA
1.0
O
TA=-40 C
2.5
O
2.0
TA=-40 C
O
TA=25 C
1.5
O
TA=85 C
O
TA=25 C
0.5
3.0
1.0
CIN=4.7μF
O
TA=85 C
COUT=4.7μF
0.5
IOUT=10mA
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0.0
0.0
1
2
3
4
5
6
0.5
7
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 22. Output Voltage vs. Input Voltage
Jan. 2013
1.0
Figure 23. Output Voltage vs. Input Voltage
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
18
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
1.205
AP2114_1.2V
1.200
VIN=2.5V
1.3
1.1
1.195
1.190
1.185
1.180
1.175
1.170
O
0.8
0.7
0.6
VIN=2.5V
0.5
0.3
O
0.2
TA=85 C
Continuous Airflow 10scfm
1.155
0.9
O
TA=25 C
1.160
1.0
VIN=3.3V
0.4
TA=-40 C
1.165
AP2114_1.2V
1.2
Output Voltage (V)
Output Voltage (V)
1.210
O
TA=25 C
CIN=4.7μF
COUT=4.7μF
0.1
Continuous Airflow 10scfm
0.0
1.150
0.0
0.2
0.4
0.6
0.8
0.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Output Current (A)
Output Current (A)
Figure 24. Output Voltage vs. Output Current
Figure 25. Output Voltage vs. Output Current
2.00
3.0
1.75
2.5
Output Voltage (V)
Output Voltage (V)
AP2114_1.8V
VIN=2.8V
1.50
CIN=4.7μF
1.25
COUT=4.7μF
1.00
O
TA=-40 C
0.75
O
TA=25 C
0.50
2.0
AP2114_2.5V
VIN=3.5V
1.5
COUT=4.7μF
CIN=4.7μF
O
TA=-40 C
1.0
O
TA=25 C
O
O
TA=85 C
TA=85 C
0.5
0.25
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0.00
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
Output Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Output Current (A)
Figure 26. Output Voltage vs. Output Current
Jan. 2013
0.2
Figure 27. Output Voltage vs. Output Current
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
19
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
3.35
AP2114_3.3V
3.5
AP2114_3.3V
3.34
VIN=4.3V
Output Voltage (V)
Output Voltage (V)
3.0
2.5
2.0
1.5
VIN=4.3V
VIN=5V
1.0
CIN=4.7μF
Continuous Airflow 10scfm
O
TA=25 C
3.32
O
TA=85 C
3.31
3.30
3.29
O
TA=25 C
0.5
O
TA=-40 C
3.33
3.28
Continuous Airflow 10scfm
COUT=4.7μF
0.0
3.27
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
Figure 28. Output Voltage vs. Output Current
0.8
1.0
Figure 29. Output Voltage vs. Output Current
0.60
0.7
AP2114_1.8V
VIN=2.8V
0.6
0.50
CIN=4.7μF
COUT=4.7μF
0.5
O
TA=-40 C
0.4
O
TA=25 C
O
0.3
AP2114_2.5V
VIN=3.5V
0.55
Dropout Voltage (V)
Dropout Voltage (V)
0.6
Output Current (A)
Output Current (A)
TA=85 C
0.2
CIN=4.7μF
0.45
COUT=4.7μF
0.40
O
TA=-40 C
0.35
O
0.30
TA=25 C
0.25
TA=85 C
O
0.20
0.15
0.10
0.1
0.05
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0.00
0.0
0.0
0.2
0.4
0.6
0.8
0.0
1.0
Figure 30. Dropout Voltage vs. Output Current
Jan. 2013
0.2
0.4
0.6
0.8
1.0
Output Current (A)
Output Current (A)
Figure 31. Dropout Voltage vs. Output Current
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
20
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
1.8
0.60
0.55
O
Max. Output Current (A)
Dropout Voltage (V)
0.45
COUT=4.7μF
0.40
O
0.35
TA=-40 C
0.30
TA=25 C
0.25
TA=85 C
AP2114_1.2V
1.6
AP2114_3.3V
CIN=4.7μF
0.50
O
O
0.20
0.15
TA=25 C
1.4
CIN=4.7μF
COUT=4.7μF
1.2
1.0
0.8
0.6
0.4
0.10
0.2
0.05
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0.0
0.00
0.0
0.2
0.4
0.6
0.8
2.0
1.0
2.5
3.0
4.0
4.5
5.0
5.5
Figure 32. Dropout Voltage vs. Output Current
Figure 33. Max. Output Current vs. Input Voltage
2.0
2.0
AP2114_1.8V
CIN=4.7μF
1.8
1.6
COUT=4.7μF
1.6
COUT=4.7μF
1.4
VOUT=1.8X(1+1.5%)
1.4
VOUT=2.5X(1+1.5%)
Max. Output Current (A)
1.8
1.2
1.0
0.8
0.6
AP2114_2.5V
CIN=4.7μF
1.2
1.0
0.8
0.6
0.4
0.4
0.2
6.0
Input Voltage (V)
Output Current (A)
Max. Output Current (A)
3.5
0.2
Continuous Airflow 10scfm
Continuous Airflow 10scfm
0.0
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
3.0
Input Voltage (V)
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Figure 34. Max. Output Current vs. Input Voltage
Jan. 2013
3.5
Figure 35. Max. Output Current vs. Input Voltage
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
21
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
1.8
2.0
AP2114_3.3V
1.6
CIN=4.7μF
COUT=4.7μF
Max. Output Current (A)
Max. Output Current (A)
1.4
O
1.2
TA=25 C
1.0
0.8
0.6
0.4
TA=-30OC
AP2114-3.3V
TO-252-2 (1)/(3)
1.8
TA=25OC
1.6
TA=40OC
1.4
TA=50 C
1.2
TA=85OC
O
1.0
0.8
Note 4
0.6
Still air
0.2
0.4
Continuous Airflow 10scfm
Copper Heat Spreader Area:100mm
0.0
2
0.2
4.0
4.5
5.0
5.5
6.0
4.0
4.5
5.0
5.5
6.0
Input Voltege (V)
Input Voltage (V)
Figure 36. Max. Output Current vs. Input Voltage
Figure 37. Max. Output Current vs. Input Voltage
Note 4: Considering power dissipation and thermal behavior, we suggest provide enough design margins in
application design which are no less than 30% at least.
100
100
AP2114_1.2V
VIN=2.5V
AP2114_1.8V
VIN=2.8V
90
Output Short Current (mA)
Output Short Current (mA)
90
80
70
60
50
40
30
CIN=4.7μF
80
COUT=4.7μF
70
60
50
40
30
Continuous Airflow 10scfm
Continuous Airflow 10scfm
20
20
-40
-20
0
20
40
60
80
-40
0
20
40
60
80
100
120
Temperature ( C)
Temperature ( C)
Figure 38. Output Short Current vs. Temperature
Jan. 2013
-20
O
O
Figure 39. Output Short Current vs. Temperature
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
22
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
100
100
AP2114_2.5V
VIN=3.5V
CIN=4.7μF
80
AP2114_3.3V
VIN=4.3V
90
Output Short Current (mA)
Output Short Current (mA)
90
COUT=4.7μF
70
60
50
40
80
70
60
50
40
30
30
Continuous Airflow 10scfm
Continuous Airflow 10scfm
20
20
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
80
Temperature ( C)
Temperature ( C)
Figure 40. Output Short Current vs. Temperature
Figure 41. Output Short Current vs. Temperature
80
80
AP2114_1.2V
AP2114_1.8V
70
70
60
60
PSRR (dB)
PSRR (dB)
60
O
O
50
40
50
40
O
O
30
TA=25 C
20
COUT=4.7μF
30
CIN=1μF
20
10
Ripple=1Vp-p
0
COUT=4.7μF
Ripple=1Vp-p
0
100
1k
10k
100k
100
Frequency (Hz)
1k
10k
100k
Frequency (Hz)
Figure 42. PSRR vs. Frequency
Jan. 2013
CIN=4.7μF
IOUT=10mA
IOUT=10mA
10
TA=25 C
Figure 43. PSRR vs. Frequency
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
23
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Performance Characteristics (Continued)
80
80
AP2114_3.3V
70
70
60
60
50
50
O
TA=25 C
CIN=1μF
COUT=4.7μF
Ripple=1Vp-p
PSRR (dB)
PSRR (dB)
AP2114_2.5V
40
O
TA=25 C
30
40
30
CIN=4.7μF
COUT=4.7μF
20
20
IOUT=10mA
10
IOUT=10mA
IOUT=100mA
10
Ripple=1Vp-p
0
0
100
1k
10k
100
100k
Figure 44. PSRR vs. Frequency
1A
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Figure 45. PSRR vs. Frequency
CIN=4.7μF
COUT=4.7μF
0A
Figure 46. Load Transient
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
24
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Typical Application
Figure 47. Typical Application of AP2114
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
25
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions
SOT-223
Unit: mm(inch)
6.300(0.248)
6.700(0.264)
0)
0.250(0.01
4)
01
0.
0(
0.35
2.900(0.114)
3.100(0.122)
0.900(0.035)
3.700(0.146)
3.300(0.130)
6.700(0.264)
7.300(0.287)
MIN
0.250(0.010)
1.750(0.069)
TYP
2.300(0.091)
0.610(0.024)
TYP
0.810(0.032)
0°
10°
4.500(0.177)
4.700(0.185)
0.020(0.001)
0.100(0.004)
Jan. 2013
1.500(0.059)
1.520(0.060)
1.700(0.067)
1.800(0.071)
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
26
Jan. 2013
Rev. 2. 2
27
4.800(0.189)
6.500(0.256)
5.450(0.215)
6.250(0.246)
1.350(0.053)
1.650(0.065)
TO-252-2 (1)
3.800REF(0.150REF)
2.550(0.100)
2.900(0.114)
1.400(0.055)
1.780(0.070)
0.600(0.024)
0.900(0.035)
9.500(0.374)
9.900(0.390)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
0.900(0.035)
1.250(0.049)
TO-252-2 (3)
6.500(0. 256)
6.700(0. 264)
4.700REF
5.130(0.202)
5.460(0.215)
1.29±0.1
0.470(0.019)
0.600(0.024)
5
9
0.900(0.035)
1.100(0.043)
0
8
2.900REF
3
7
1.400(0.055)
1.700(0.067)
9.800(0.386)
10.400(0.409)
5.250REF
0.720(0.028)
0.850(0.033)
0.720(0.028)
0.900(0. 035)
2.286(0. 090)
BSC
0.600(0.024)
1.000(0.039)
0.150(0.006)
0.750(0.030)
1.800REF
6.000(0.236)
6.200(0.244)
Option 1
5
9
2.200(0.087)
2.380(0.094)
Jan. 2013
Unit: mm(inch)
0
8
Option 2
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
28
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
TO-252-2 (4)
Jan. 2013
Rev. 2. 2
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
29
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
TO-263-3
4.070(0.160)
4.820(0.190)
Unit: mm(inch)
3°
9.650(0.380)
10.290(0.405)
8.840(0.348)
1.150(0.045)
1.390(0.055)
1.270(0.050)
1.390(0.055)
7.420(0.292)
70°
14.760(0.581)
15.740(0.620)
1.150(0.045)
1.390(0.055)
3°
0.510(0.020)
0.990(0.039)
2.540(0.100)
2.540(0.100)
7.980(0.314)
2°
8°
0.380(0.015)
2.540(0.100)
0°
6°
Jan. 2013
2.640(0.104)
2.700(0.106)
0.360(0.014)
0.400(0.016)
7°
2.200(0.087)
5.600(0.220)
0.020(0.001)
0.250(0.010)
2.390(0.094)
2.690(0.106)
8.640(0.340)
9.650(0.380)
7°
Rev. 2. 2
2.540(0.100)
BCD Semiconductor Manufacturing Limited
30
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
Unit: mm(inch)
R0.150(0.006)
SOIC-8
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
31
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE
AP2114
Mechanical Dimensions (Continued)
Unit: mm(inch)
3.202(0.126)
3.402(0.134)
PSOP-8
Jan. 2013
Rev. 2. 2
BCD Semiconductor Manufacturing Limited
32
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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