Dynex DS502ST11 Rectifier diode Datasheet

DS502ST
DS502ST
Rectifier Diode
Replaces January 2000 version, DS4794-3.0
DS4794-4.0 October 2001
FEATURES
KEY PARAMETERS
■
Double Side Cooling
VRRM 1400V
■
High Surge Capability
IF(AV) 866A
IFSM
APPLICATIONS
■
Rectification
■
Freewheel Diode
■
DC Motor Control
■
Power Supplies
■
Welding
■
Battery Chargers
8000A
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS502ST14
1400
DS502ST13
1300
DS502ST12
1200
DS502ST11
1100
DS502ST10
1000
DS502ST09
900
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: T
See Package Details for further information.
Fig. 1 Package outline
CURRENT RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS502ST14
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS502ST
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
866
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1360
A
Continuous (direct) forward current
-
1236
A
556
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
873
A
Continuous (direct) forward current
-
721
A
Conditions
Max.
Units
540
A
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
848
A
Continuous (direct) forward current
-
783
A
350
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
550
A
Continuous (direct) forward current
-
465
A
IF
Half wave resistive load
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DS502ST
SURGE RATINGS
Parameter
Symbol
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 175oC
6.5
kA
VR = 50% VRRM - 1/4 sine
211 x 103
A2s
10ms half sine; Tcase = 175oC
8.0
kA
VR = 0
320 x 103
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
dc
-
0.07
o
Anode dc
-
0.14
o
Cathode dc
-
0.14
o
C/W
Double side
-
0.02
o
C/W
Single side
-
0.04
o
C/W
Forward (conducting)
-
185
o
Reverse (blocking)
-
175
o
Storage temperature range
–55
200
o
Clamping force
3.5
5.0
kN
Min.
Max.
Units
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 4.5kN
with mounting compound
C
Virtual junction temperature
C
C
CHARACTERISTICS
Symbol
Parameter
Conditions
IRM
Peak reverse current
At VRRM, Tcase = 175oC
-
30
mA
VTO
Threshold voltage
At Tvj = 175˚C
-
0.84
V
Slope resistance
At Tvj = 175˚C
-
0.667
mΩ
rT
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DS502ST
CURVES
800
3000
dc
1/2 wave
3 phase
6 phase
700
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
2500
2000
1500
Tj = 175ºC
1000
Tj = 25ºC
500
600
500
400
300
200
100
0
0.7
0
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Instantaneous forward voltage, VF - (V)
0
1.6
Fig.2 Maximum (limit) forward characteristics
VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF
100
200
300
400
500
600
Mean on-state current, IT(AV) - (A)
700
800
Fig.3 Dissipation curves
Where
A = 0.504353
B = 0.056611
C = 0.000639
D = –0.0011
these values are valid for Tj = 125˚C for IF 500A to 2500A
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DS502ST
1.0
250
12
I2t = Î2 x t
2
200
6
4
150
I2t
Thermal impedance - (˚C/W)
8
I2t value - (A2s x 103)
Peak half sine forward current - (kA)
10
Anode side cooled
0.1
Double side cooled
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
2
0
1
10
ms
1
2 3
5
10
20
100
50
0.001
0.001
0.01
Effective thermal resistance
Junction to case ˚C/W
Double side
0.070
0.080
0.105
0.1425
0.1
Time - (s)
Single side
0.140
0.150
0.175
0.2125
1
10
Cycles at 50Hz
Duration
Fig.4 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 175˚C)
Fig.5 Maximum (limit) transient thermal impedance junction to case
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DS502ST
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Holes Ø3.6 x 2.0 deep
(One in each electrode)
Cathode
Ø42 max
15.0
14.0
Ø19 nom
Ø19 nom
Anode
Ø37.5 max
Nominal weight: 55g
Clamping force: 4.5kN ±10%
Package outine type code: T
Note:
1. Package maybe supplied with pins and/or tags.
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DS502ST
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4794-4 Issue No. 4.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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