isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUP23B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUP23B 450V (Min)-BUP23C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage VALUE BUP23B 750 BUP23C 850 BUP23B 400 BUP23C 450 UNIT V V Emitter-Base Voltage 9 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current- Continuous 6 A IBM Base Current-Peak 9 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUP23B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUP23B VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= 100mA ; IB= 0;L= 25mH BUP23B VBE(sat) TYP. UNIT 400 BUP23C VCE(sat) MIN V 450 IC= 10A; IB= 1.33A 1.5 Collector-Emitter Saturation Voltage V BUP23C IC= 10A; IB= 1.67A 1.5 BUP23B IC= 10A; IB= 1.33A 1.5 Base-Emitter Saturation Voltage V BUP23C IC= 10A; IB= 1.67A 1.5 ICES Collector Cutoff Current VCE= VCESmax ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 9V ; IC= 0 10 mA hFE DC Current Gain IC= 1A ; VCE= 5V 25 Switching Times, Resistive Load ton Turn-On Time tstg Storage Time 0.7 μs 2.0 μs 0.27 μs For BUP23B IC= 10A ;IB1= -IB2= 1.33A For BUP23C IC= 10A ;IB1= -IB2= 1.67A tf Fall Time isc Website：www.iscsemi.cn 2