Eudyna ESN26A090IV High voltage - high power gan-hemt Datasheet

Eudyna GaN-HEMT 90W
Preliminary
ES/EGN26A090IV
High Voltage - High Power GaN-HEMT
FEATURES
・High Voltage Operation : VDS=50V
・High Power : 50.0dBm (typ.) @ P3dB
・High Efficiency: 55%(typ.) @ P3dB
・Linear Gain : 14.0dB(typ.) @ f=2.6GHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt
Tstg
Tch
Condition
a
in
Rating
Tc=25oC
m
i
l
e
ry
120
-5
150
-65 to +175
250
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
r
P
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
VDS
IGF
IGR
Tch
Condition
Limit
Unit
50
<TBD
>-7.2
200
V
mA
mA
oC
RG=5 Ω
RG=5 Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Pinch-Off Voltage
Vp
VDS=50V IDS=36mA
Gate-Drain Breakdown Voltage
VGDO
IGS=- 18mA
3dB Gain Compression Power
P3dB
VDS=50V
Drain Efficiency
ηd
IDS(DC)=500mA
Linear Gain
GL
f=2.6GHz
Thermal Resistance
Edition 1.2
Dec. 2005
Channel to Case
Rth
1
min.
Limit
Typ. Max.
-1.0
-2.0
-3.5
Unit
V
-
-350
-
TBD
50.0
-
dBm
-
55
-
%
14.0
-
TBD
-
1.3
1.5
V
dB
oC/W
ES/EGN26A090IV
High Voltage - High Power GaN-HEMT
53
100
51
51
90
49
49
80
47
70
45
60
43
50
Output Power [dBm]
47
45
43
41
39
37
35
33
2.45
41
a
in
39
37
ry
40
30
20
35
2.50
2.55
2.60
2.65
2.70
2.75
m
i
l
e
Frequency [GHz]
Pin=22dBm
Pin=26dBm
Pin=34dBm
Pin=38dBm
10
33
21 23
0
25 27 29
Pin=30dBm
r
P
Power Derating Curve
140
120
100
80
60
40
20
0
0
50
100
150
200
Case Temperature [o C]
Edition 1.2
Dec. 2005
2
31 33 35
Input Power [dBm]
160
Total Power Dissipasion [W]
Output Power [dBm]
53
250
300
37 39
Drain Efficiency [%]
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=500mA f=2.6GHz
Output Power vs. Frequency
VDS=50V IDS(DC)=500mA
ES/EGN26A090IV
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V, IDS=500mA, f=1 to 4 GHz,
Zl = Zs = 50 ohm
+50j
+100j
10Ω
+25j
25Ω
50Ω
+10j
0
2.6GHz
2.6GHz
-10j
-25j
-100j
-50j
r
P
+90°
2.6GHz
±180° 10
Scale for |S21|
Freq
[GHz]
1.0
1.1
1.2
1.3
1.4
+250j
1.5
1.6
1.7
∞
1.8
1.9
2.0
-250j
2.1
2.2
2.3
S11
2.4
2.5
S22
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
0°
3.9
4.0
m
i
l
e
2.6GHz
S12
0.1
S21
Scale for |S 12| -90°
Edition 1.2
Dec. 2005
3
S11
MAG
ANG
0.943
165.0
0.943
162.9
0.940
160.3
0.935
157.5
0.928
154.6
0.925
150.6
0.913
146.1
0.894
141.3
0.869
135.0
0.833
127.3
0.776
116.9
0.692
103.3
0.568
83.3
0.402
49.8
0.255
-19.0
0.296 -100.5
0.371 -138.8
0.406 -159.7
0.401 -175.1
0.357
170.2
0.272
154.9
0.139
134.9
0.046
-28.8
0.242
-67.5
0.425
-87.3
0.568 -103.1
0.665 -116.5
0.732 -127.4
0.769 -137.1
0.795 -145.2
0.814 -152.3
S21
MAG
ANG
0.650
-13.1
0.616
-18.2
0.605
-23.0
0.619
-28.1
0.662
-33.3
0.724
-39.5
0.828
-46.4
0.981
-54.7
1.221
-64.3
1.577
-75.6
2.116
-90.6
2.998
-109.6
4.387
-134.6
6.406
-169.4
8.084
144.3
7.474
95.7
5.713
58.1
4.410
31.2
3.574
9.4
3.057
-9.9
2.752
-28.8
2.545
-48.8
2.377
-69.9
2.165
-91.9
1.911
-113.2
1.663
-132.7
1.463
-149.5
1.331
-164.6
1.254
-179.5
1.254
165.6
1.324
147.4
y
r
a
in
S12
MAG
ANG
0.001
1.1
0.001
6.6
0.001
-17.8
0.001
12.1
0.001
27.6
0.001
-5.3
0.001
4.0
0.001
-2.7
0.002
-14.6
0.002
-24.3
0.003
-48.8
0.004
-69.2
0.006
-101.3
0.010
-137.9
0.014
176.6
0.014
127.7
0.013
96.2
0.011
72.4
0.010
56.3
0.009
40.2
0.009
24.7
0.009
4.9
0.009
-13.8
0.008
-37.1
0.008
-58.2
0.007
-74.9
0.007
-90.9
0.007
-106.6
0.008
-117.0
0.009
-122.4
0.013
-136.3
S22
MAG
ANG
0.905
176.8
0.899
176.2
0.897
175.3
0.906
174.2
0.910
172.9
0.912
171.2
0.911
169.2
0.910
166.8
0.902
164.1
0.895
160.8
0.875
156.4
0.839
150.9
0.762
142.5
0.588
129.2
0.228
127.2
0.333 -146.4
0.606 -155.0
0.739 -165.1
0.805 -172.8
0.843 -178.7
0.864
176.2
0.878
171.3
0.884
166.5
0.887
160.9
0.886
155.4
0.877
149.3
0.864
142.6
0.841
135.2
0.814
125.4
0.771
112.8
0.710
93.1
ES/EGN26A090IV
High Voltage - High Power GaN-HEMT
IV Package Outline
Metal-Ceramic Hermetic Package
r
P
m
i
l
e
y
r
a
in
PIN ASSIGNMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit : mm
Edition 1.2
Dec. 2005
4
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