HVGT ESJC50F08 500mA 8kV HIGH VOLTAGE DIODES Outline Drawings : mm Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect.. Cathode Mark Lot No. o 7.0 o 1.28 Features High speed switching High Current 24 min. High surge resisitivity for CRT discharge High reliability design High Voltage 21 24 min. DO-721 Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit Microwave emission power HVGT ESJC50F08 ESJC50F08 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition ESJC50F08 Units 8.0 kV 500 mA I FSM 30 A peak Junction Temperature Tj 120 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg -40 to +125 °C Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols ESJC50F08 Conditions Units Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 14 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C 100 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2015