Maxim MAX19993ETX+ Dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch Datasheet

19-5307; Rev 0; 6/10
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Features
The MAX19993 dual-channel downconverter is designed
to provide 6.4dB of conversion gain, +27dBm input IP3,
15.4dBm 1dB input compression point, and a noise
figure of 9.8dB for 1200MHz to 1700MHz diversity
receiver applications. With an optimized LO frequency
range of 1000MHz to 1560MHz, this mixer is ideal
for low-side LO injection architectures. High-side LO
injection is supported by the MAX19993A, which is pinpin and functionally compatible with the MAX19993.
S 1200MHz to 1700MHz RF Frequency Range
In addition to offering excellent linearity and noise
performance, the MAX19993 also yields a high level
of component integration. This device includes two
double-balanced passive mixer cores, two LO buffers, a
dual-input LO selectable switch, and a pair of differential
IF output amplifiers. Integrated on-chip baluns allow for
single-ended RF and LO inputs. The device requires a
nominal LO drive of 0dBm and a typical supply current of
337mA at VCC = +5.0V or 275mA at VCC = +3.3V.
S 72dBc Typical 2RF - 2LO Spurious Rejection at
The MAX19993 is pin compatible with the MAX9985/
MAX19985A/MAX9995/MAX19993A/MAX19994/
MAX19994A/MAX19995/MAX19995A series of 700MHz
to 2200MHz mixers and pin similar to the MAX19997A/
MAX19999 series of 1850MHz to 4000MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used across
multiple frequency bands.
The device is available in a 6mm x 6mm, 36-pin TQFN
package with an exposed pad. Electrical performance is
guaranteed over the extended temperature range, from
TC = -40NC to +85NC.
Applications
WCDMA/LTE Base Stations
S 1000MHz to 1560MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 6.4dB Typical Conversion Gain
S 9.8dB Typical Noise Figure
S +27dBm Typical Input IP3
S 15.4dBm Typical Input 1dB Compression Point
PRF = -10dBm
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation
S Low -6dBm to +3dBm LO Drive
S Integrated LO Buffer
S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 57dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/19985A/
MAX9995/MAX19993A/MAX19994/MAX19994A/
MAX19995/MAX19995A Series of 700MHz to
2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single +5V or +3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
Wireless Local Loop
Ordering Information
Fixed Broadband Wireless Access
Private Mobile Radios
Military Systems
PART
TEMP RANGE
PIN-PACKAGE
MAX19993ETX+
MAX19993ETX+T
36 TQFN-EP*
-40NC to +85NC
36 TQFN-EP*
-40NC to +85NC
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
MAX19993
General Description
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
Continuous Power Dissipation (Note 1)...............................8.7W
BJA (Notes 2, 3)............................................................ +38NC/W
BJC (Notes 1, 3)..............................................................7.4NC/W
Operating Temperature Range (Note 4).... TC = -40NC to +85NC
Junction Temperature......................................................+150NC
Storage Temperature Range............................. -65NC to +150NC
Lead Temperature (soldering, 10s).................................+300NC
Soldering Temperature (reflow).......................................+260NC
VCC to GND...........................................................-0.3V to +5.5V
LO1, LO2 to GND............................................................... Q0.3V
LOSEL to GND.......................................... -0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power......................... +15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun)..............................................................50mA
TAPMAIN, TAPDIV...................................................-0.3V to +2V
Any Other Pins to GND............................. -0.3V to (VCC + 0.3V)
Note 1: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
Note 2: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I,
R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
PARAMETER
SYMBOL
Supply Voltage
VCC
Supply Current
ICC
LOSEL Input High Voltage
VIH
LOSEL Input Low Voltage
VIL
LOSEL Input Current
CONDITIONS
MIN
4.75
Total supply current
TYP
MAX
5
5.25
V
337
400
mA
2
IIH and IIL
UNITS
V
-10
0.8
V
+10
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
Typical values are at VCC = 3.3V, TC = +25NC, unless otherwise noted. Parameters are guaranteed by design and not production
tested.)
PARAMETER
Supply Voltage
SYMBOL
VCC
CONDITIONS
TYP
3.3
MAX
3.6
UNITS
V
Supply Current
ICC
275
mA
LOSEL Input High Voltage
VIH
2
V
LOSEL Input Low Voltage
VIL
0.8
V
2
Total supply current (Note 5)
MIN
3.0
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RF Frequency
fRF
(Note 6)
1200
1700
MHz
LO Frequency
fLO
(Note 6)
1000
1560
MHz
Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application
Circuit, IF matching components affect the
IF frequency range (Note 6)
100
500
IF Frequency
LO Drive Level
MHz
fIF
PLO
MAX19993
RECOMMENDED AC OPERATING CONDITIONS
Using Mini-Circuits TC4-1W-7A 4:1 transformer as defined in the Typical Application
Circuit, IF matching components affect the
IF frequency range (Note 6)
50
250
(Note 6)
-6
+3
dBm
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from
50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
TC = -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
PARAMETER
Conversion Gain (Note 5)
SYMBOL
GC
CONDITIONS
MIN
TYP
MAX
7.4
4.5
6.4
TC = +25NC
5.1
6.4
7.0
TC = +25NC, fRF = 1427MHz to 1463MHz
5.2
6.4
6.9
Conversion Gain Flatness
DGC
fRF = 1427MHz to 1463MHz
Gain Variation Over Temperature
TCCG
TC = -40NC to +85NC
Input Compression Point
IP1dB
fRF = 1450MHz (Notes 5, 8)
12.9
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone
24.0
27.0
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
fRF = 1427MHz to 1463MHz, TC = +25NC
(Note 5)
24.8
27.0
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
fRF = 1427MHz to 1463MHz (Note 5)
24.4
27.0
Input Third-Order Intercept Point
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure (Note 9)
IIP3
TCIIP3
NFSSB
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40NC to +85NC
UNITS
dB
Q0.03
dB
-0.009
dB/NC
15.4
dBm
dBm
dBm
Q0.5
Single sideband, no blockers present
9.8
12.7
fRF = 1427MHz to 1463MHz, TC = +25NC,
PLO = 0dBm, single sideband, no blockers
present
9.8
11.0
fRF = 1427MHz to 1463MHz, PLO = 0dBm,
single sideband, no blockers present
9.8
12.0
dB
3
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from
50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
TC = -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
PARAMETER
Noise Figure Temperature
Coefficient
Noise Figure with Blocker
SYMBOL
CONDITIONS
Single sideband, no blockers present,
TC = -40NC to +85NC
0.016
NFB
PBLOCKER = +8dBm, fRF = 1450MHz,
fLO = 1310MHz, fBLOCKER = 1550MHz,
PLO = 0dBm, VCC = 5.0V, TC = +25oC
(Notes 9, 10)
21.0
2x2
fRF = 1450MHz,
fLO = 1310MHz,
fSPUR = 1380MHz,
PLO = 0dBm,
VCC = 5.0V,
TC = +25oC
fRF = 1450MHz,
fLO = 1310MHz,
fSPUR = 1356.67MHz
3RF - 3LO Spur Rejection
(Note 9)
TYP
TCNF
fRF = 1450MHz,
fLO = 1310MHz,
fSPUR = 1380MHz
2RF - 2LO Spur Rejection
(Note 9)
MIN
3x3
fRF = 1450MHz,
fLO = 1310MHz,
fSPUR = 1356.67MHz,
PLO = 0dBm,
VCC = 5.0V,
TC = +25oC
PRF = -10dBm
58
72
PRF = -5dBm
53
67
PRF = -10dBm
61
72
MAX
UNITS
dB/NC
22.8
dB
dBc
dBc
PRF = -5dBm
56
67
PRF = -10dBm
77
93
PRF = -5dBm
67
83
PRF = -10dBm
82
93
dBc
dBc
PRF = -5dBm
72
83
LO and IF terminated into matched
impedance, LO on
21
LO port selected, RF and IF terminated into
matched impedance
24
LO port unselected, RF and IF terminated
into matched impedance
27
Nominal differential impedance of the IF
outputs
200
I
IF Output Return Loss
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
15
dB
RF-to-IF Isolation
(Note 5)
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
ZIF
dB
dB
33
dB
LO Leakage at RF Port
-38
dBm
2LO Leakage at RF Port
-27
dBm
4
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from
50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
TC = -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
PARAMETER
SYMBOL
LO Leakage at IF Port
CONDITIONS
MIN
(Note 5)
TYP
MAX
-18
UNITS
dBm
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
43
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
43
47
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1310MHz, fLO2 = 1311MHz (Note 5)
47
57
dB
LO Switching Time
50% of LOSEL to IF settled within 2 degrees
50
ns
Channel Isolation (Note 5)
47
dB
3.3V SUPPLY, LOW SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm,
fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz, TC = +25NC, unless otherwise noted.) (Note 7)
PARAMETER
SYMBOL
CONDITIONS
TYP
MAX
UNITS
6.2
dB
Conversion Gain Flatness
DGC
fRF = 1427MHz to 1463MHz
Q0.05
dB
Gain Variation Over Temperature
TCCG
TC = -40NC to +85NC
-0.009
dB/NC
Input Compression Point
IP1dB
(Note 8)
12.8
dBm
fRF1 - fRF2 = 1MHz
24.4
dBm
Q0.8
dBm
Conversion Gain
GC
(Note 5)
MIN
Input Third-Order Intercept Point
IIP3
Input Third-Order Intercept Point
Variation Over Temperature
TCIIP3
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40NC to +85NC
Noise Figure
NFSSB
Single sideband, no blockers present
9.8
dB
Noise Figure Temperature
Coefficient
TCNF
Single sideband, no blockers present,
TC = -40NC to +85NC
0.016
dB/NC
2RF - 2LO Spur Rejection
2x2
3RF - 3LO Spur Rejection
3x3
RF Input Return Loss
LO Input Return Loss
PRF = -10dBm
73
PRF = -5dBm
68
PRF = -10dBm
80
PRF = -5dBm
70
LO and IF terminated into matched
impedance, LO on
21
LO port selected, RF and IF terminated into
matched impedance
24
LO port unselected, RF and IF terminated
into matched impedance
27
dBc
dBc
dB
dB
5
MAX19993
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
3.3V SUPPLY, LOW SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm,
fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz, TC = +25NC, unless otherwise noted.) (Note 7)
PARAMETER
IF Output Return Loss
SYMBOL
CONDITIONS
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
MIN
TYP
15
MAX
UNITS
dB
RF-to-IF Isolation
33
dB
LO Leakage at RF Port
-45
dBm
2LO Leakage at RF Port
-27
dBm
LO Leakage at IF Port
-22
dBm
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
47
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
47
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1310MHz, fLO2 = 1311MHz
57
dB
LO Switching Time
50% of LOSEL to IF settled within
2 degrees
50
ns
Channel Isolation
dB
Note 5: 100% production tested for functionality.
Note 6: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics section.
Note 7: All limits reflect losses of external components, including a 0.5dB loss at fIF = 140MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.
Note 9: Not production tested.
Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
6
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
TC = +85°C
5
4
6
PLO = -6dBm, -3dBm, 0dBm, +3dBm
5
4
1400
1500
1600
1700
1300
RF FREQUENCY (MHz)
1400
MAX19993 toc04
28
1500
1600
5
1700
1200
1300
TC = -40°C
PLO = 0dBm
PLO = -3dBm
26
28
PRF = -5dBm/TONE
27
VCC = 5.0V
26
1400
1500
1600
1700
25
1200
1300
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
1700
12
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
7
1500
RF FREQUENCY (MHz)
1600
1700
1700
12
11
10
9
VCC = 4.75V, 5.0V, 5.25V
7
7
1400
1600
8
8
TC = -40°C
1500
NOISE FIGURE vs. RF FREQUENCY
11
9
1400
13
NOISE FIGURE (dB)
9
1300
1300
RF FREQUENCY (MHz)
MAX19993 toc08
MAX19993 toc07
10
1200
1200
NOISE FIGURE vs. RF FREQUENCY
TC = +25°C
8
1600
13
NOISE FIGURE (dB)
NOISE FIGURE (dB)
TC = +85°C
11
1500
RF FREQUENCY (MHz)
13
12
1400
MAX19993 toc09
1300
1700
VCC = 4.75V
25
1200
1600
VCC = 5.25V
PLO = -6dBm
25
1500
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
27
1400
RF FREQUENCY (MHz)
PLO = +3dBm
INPUT IP3 (dBm)
INPUT IP3 (dBm)
TC = +25°C
26
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
TC = +85°C
27
6
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
28
7
4
1200
INPUT IP3 (dBm)
1300
MAX19993 toc05
1200
MAX19993 toc03
7
CONVERSION GAIN (dB)
6
CONVERSION GAIN vs. RF FREQUENCY
8
MAX19993 toc02
MAX19993 toc01
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
TC = -40°C
TC = +25°C
7
CONVERSION GAIN vs. RF FREQUENCY
8
MAX19993 toc06
CONVERSION GAIN vs. RF FREQUENCY
8
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
7
MAX19993
Typical Operating Characteristics
(Typical Application Circuit (see Table 1). VCC = 5.0V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 5.0V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless
otherwise noted.)
TC = +25°C
TC = -40°C
60
70
60
PLO = -6dBm
PRF = -5dBm
MAX19993 toc12
PLO = 0dBm
MAX19993 toc11
PRF = -5dBm
PLO = +3dBm
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
2RF - 2LO RESPONSE (dBc)
TC = +85°C
70
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
2RF - 2LO RESPONSE (dBc)
2RF - 2LO RESPONSE (dBc)
PRF = -5dBm
MAX19993 toc10
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
70
VCC = 4.75V, 5.0V, 5.25V
60
PLO = -3dBm
50
1500
1600
1700
50
1200
1300
RF FREQUENCY (MHz)
TC = -40°C
75
TC = +25°C
65
PLO = 0dBm
55
1700
1200
PRF = -5dBm
85
PLO = -3dBm
75
1400
1500
1600
PLO = +3dBm
PLO = -6dBm
65
1700
1300
1400
1500
1600
VCC = 5.0V
TC = -40°C
14
13
15
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1400
1500
RF FREQUENCY (MHz)
1600
1700
VCC = 4.75V
65
1200
1300
1400
1500
1600
1700
17
VCC = 5.25V
16
15
VCC = 4.75V
VCC = 5.0V
14
13
1300
VCC = 5.25V
INPUT P1dB vs. RF FREQUENCY
14
1200
75
1700
MAX19993 toc17
16
INPUT P1dB (dBm)
15
PRF = -5dBm
85
INPUT P1dB vs. RF FREQUENCY
TC = +25°C
1700
RF FREQUENCY (MHz)
17
MAX19993 toc16
TC = +85°C
1600
3RF - 3LO RESPONSE vs. RF FREQUENCY
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
16
1500
55
1200
RF FREQUENCY (MHz)
17
1400
95
INPUT P1dB (dBm)
1300
1300
RF FREQUENCY (MHz)
55
1200
8
1600
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
3RF - 3LO RESPONSE (dBc)
3RF - 3LO RESPONSE (dBc)
85
MAX19993 toc13
PRF = -5dBm
TC = +85°C
1500
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
1400
MAX19993 toc15
1400
3RF - 3LO RESPONSE (dBc)
1300
MAX19993 toc14
1200
MAX19993 toc18
50
INPUT P1dB (dBm)
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
13
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
50
45
TC = -40°C, +25°C, +85°C
40
35
50
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
40
CHANNEL ISOLATION vs. RF FREQUENCY
55
1300
1400
1500
1600
1700
45
VCC = 4.75V, 5.0V, 5.25V
40
30
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
TC = +85°C
-30
PLO = -6dBm
-20
PLO = 0dBm
-30
PLO = +3dBm
1700
MAX19993 toc24
-10
0
VCC = 5.25V
LO LEAKAGE AT IF PORT (dBm)
TC = +25°C
-10
0
MAX19993 toc23
TC = -40°C
LO LEAKAGE AT IF PORT (dBm)
MAX19993 toc22
0
-20
50
35
30
1200
MAX19993 toc21
60
35
30
LO LEAKAGE AT IF PORT (dBm)
MAX19993 toc20
55
CHANNEL ISOLATION (dB)
MAX19993 toc19
CHANNEL ISOLATION (dB)
55
CHANNEL ISOLATION vs. RF FREQUENCY
60
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION vs. RF FREQUENCY
60
-10
VCC = 4.75V
-20
-30
VCC = 5.0V
PLO = -3dBm
-40
-40
1260
1360
1460
1560
-40
1060
1160
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
1460
1560
RF-TO-IF ISOLATION vs. RF FREQUENCY
TC = -40°C
20
40
30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
20
1300
1400
1500
RF FREQUENCY (MHz)
1160
1600
1700
1260
1360
1460
1560
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19993 toc26
MAX19993 toc25
30
1200
1060
LO FREQUENCY (MHz)
50
RF-TO-IF ISOLATION (dB)
RF-TO-IF ISOLATION (dB)
TC = +85°C
TC = +25°C
1360
LO FREQUENCY (MHz)
50
40
1260
MAX19993 toc27
1160
RF-TO-IF ISOLATION (dB)
1060
40
30
VCC = 4.75V, 5.0V, 5.25V
20
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
9
MAX19993
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 5.0V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 5.0V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless
otherwise noted.)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = -40°C
-40
-50
TC = +85°C
TC = +25°C
-60
-70
PLO = 0dBm
-40
-50
PLO = -6dBm
PLO = -3dBm
-60
1160
1270
1380
1490
1600
VCC = 4.75V, 5.0V, 5.25V
-50
-60
-70
1050
1160
1270
1380
1490
1600
1160
1050
1270
1380
1490
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-30
TC = +85°C
-50
-30
PLO = -6dBm
-40
PLO = -3dBm
-50
VCC = 5.0V
-60
1270
1380
1490
1600
1160
LO FREQUENCY (MHz)
1270
1380
1490
60
TC = +85°C
40
1600
1870
1380
LO FREQUENCY (MHz)
-50
1050
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19993 toc35
60
PLO = -6dBm, -3dBm, 0dBm, +3dBm
50
40
1160
VCC = 4.75V
-40
1160
1490
1600
1270
1380
1490
1600
LO FREQUENCY (MHz)
70
LO SWITCH ISOLATION (dB)
TC = -40°C
MAX19993 toc34
LO SWITCH ISOLATION vs. LO FREQUENCY
50
-30
LO FREQUENCY (MHz)
70
TC = +25°C
VCC = 5.25V
-20
-60
1050
LO SWITCH ISOLATION vs. LO FREQUENCY
70
LO SWITCH ISOLATION (dB)
1160
MAX19993 toc33
MAX19993 toc32
-20
PLO = 0dBm
1600
MAX19993 toc36
-40
PLO = +3dBm
-10
2LO LEAKAGE AT RF PORT (dBm)
TC = +25°C
-10
2LO LEAKAGE AT RF PORT (dBm)
-20
MAX19993 toc31
LO FREQUENCY (MHz)
-60
10
-40
LO FREQUENCY (MHz)
TC = -40°C
1050
-30
LO FREQUENCY (MHz)
-10
1050
MAX19993 toc30
PLO = +3dBm
-70
1050
2LO LEAKAGE AT RF PORT (dBm)
-30
-20
LO LEAKAGE AT RF PORT (dBm)
-30
-20
LO LEAKAGE AT RF PORT (dBm)
MAX19993 toc28
LO LEAKAGE AT RF PORT (dBm)
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19993 toc29
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO SWITCH ISOLATION (dB)
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
60
VCC = 4.75V, 5.0V, 5.25V
50
40
1050
1160
1870
1380
LO FREQUENCY (MHz)
1490
1600
1050
1160
1870
1380
LO FREQUENCY (MHz)
1490
1600
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
RF PORT RETURN LOSS
vs. RF FREQUENCY
5
0
VCC = 4.75V, 5.0V, 5.25V
5
IF PORT RETURN LOSS (dB)
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
15
20
25
15
LO = 1310MHz
20
LO = 1060MHz
25
30
1300
1400
1500
1600
30
1700
320
410
500
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
PLO = +3dBm
20
PLO = -3dBm
30
PLO = -6dBm
1400
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
20
30
40
50
1600
1800
2000
1200
1000
LO FREQUENCY (MHz)
1400
1600
1800
2000
LO FREQUENCY (MHz)
SUPPLY CURRENT vs. TEMPERATURE (TC)
370
360
SUPPLY CURRENT (mA)
1200
MAX19993 toc40
0
MAX19993 toc39
PLO = 0dBm
10
1000
230
IF FREQUENCY (MHz)
0
40
140
50
RF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS (dB)
1200
LO SELECTED PORT RETURN LOSS (dB)
LO = 1560MHz
10
VCC = 5.25V
VCC = 5.0V
MAX19993 toc41
RF PORT RETURN LOSS (dB)
IF = 140MHZ
MAX19993 toc37
0
MAX19993 toc38
IF PORT RETURN LOSS
vs. IF FREQUENCY
350
340
330
320
VCC = 4.75V
310
-40
-15
10
35
60
85
TEMPERATURE (°C)
11
MAX19993
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 5.0V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 3.3V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless
otherwise noted.)
TC = +85°C
5
TC = +25°C
4
6
PLO = -6dBm, -3dBm, 0dBm, +3dBm
5
4
1400
1500
1600
1700
1300
RF FREQUENCY (MHz)
6
VCC = 3.0V
5
1500
1600
1700
1200
1300
VCC = 3.3V
PRF = -5dBm/TONE
TC = +25°C
24
23
PLO = +3dBm
26
25
PLO = 0dBm
PLO = -6dBm
1500
1600
1700
INPUT IP3 vs. RF FREQUENCY
VCC = 3.3V
PRF = -5dBm/TONE
24
1400
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 (dBm)
INPUT IP3 (dBm)
25
1400
27
MAX19993 toc45
TC = +85°C
26
VCC = 3.3V
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
VCC = 3.6V
7
4
1200
27
23
VCC = 3.6V
PRF = -5dBm/TONE
26
INPUT IP3 (dBm)
1300
MAX19993 toc46
1200
MAX19993 toc44
7
MAX19993 toc47
6
VCC = 3.3V
CONVERSION GAIN vs. RF FREQUENCY
8
CONVERSION GAIN (dB)
7
MAX19993 toc42
VCC = 3.3V
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
TC = -40°C
CONVERSION GAIN vs. RF FREQUENCY
8
MAX19993 toc43
CONVERSION GAIN vs. RF FREQUENCY
8
VCC = 3.3V
25
24
VCC = 3.0V
23
TC = -40°C
22
22
22
PLO = -3dBm
21
21
1500
1600
1700
21
1200
1300
RF FREQUENCY (MHz)
13
MAX19993 toc48
11
10
9
11
10
9
PLO = -6dBm, -3dBm, 0dBm, +3dBm
8
TC = -40°C
7
1300
1400
1500
RF FREQUENCY (MHz)
1300
1600
1700
1400
1500
1600
1700
13
12
11
10
9
VCC = 3.0V, 3.3V, 3.6V
8
7
1200
1200
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V
TC = +25°C
12
1700
RF FREQUENCY (MHz)
12
NOISE FIGURE (dB)
TC = +85°C
8
1600
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V
12
1500
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
13
1400
MAX19993 toc50
1400
NOISE FIGURE (dB)
1300
MAX19993 toc49
1200
NOISE FIGURE (dB)
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
7
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
50
60
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
1400
1500
1600
1700
1300
RF FREQUENCY (MHz)
TC = +85°C
65
1400
1500
60
1600
1700
VCC = 3.0V
1200
1300
TC = -40°C
1400
1500
1600
1700
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
3RF - 3LO RESPONSE (dBc)
MAX19993 toc54
VCC = 3.3V
PRF = -5dBm
75
VCC = 3.3V
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
70
50
1200
VCC = 3.3V
PRF = -5dBm
75
65
PLO = -6dBm, -3dBm, 0dBm, +3dBm
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
PRF = -5dBm
VCC = 3.6V
3RF - 3LO RESPONSE (dBc)
1300
MAX19993 toc53
VCC = 3.6V
50
1200
3RF - 3LO RESPONSE (dBc)
MAX19993 toc52
70
PRF = -5dBm
MAX19993 toc56
60
TC = -40°C
PLO = +3dBm
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
2RF - 2LO RESPONSE (dBc)
TC = +25°C
VCC = 3.3V
PRF = -5dBm
MAX19993 toc55
2RF - 2LO RESPONSE (dBc)
70
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
2RF - 2LO RESPONSE (dBc)
VCC = 3.3V
PRF = -5dBm
TC = +85°C
MAX19993 toc51
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
75
VCC = 3.3V
65
TC = +25°C
55
1400
1500
1600
1700
1300
RF FREQUENCY (MHz)
MAX19993 toc57
13
TC = -40°C
15
1600
1700
TC = +25°C
11
10
VCC = 3.3V
13
12
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1400
1500
RF FREQUENCY (MHz)
1600
1700
1400
1500
1600
15
VCC = 3.6V
VCC = 3.3V
14
1700
13
12
VCC = 3.0V
11
10
1300
1300
INPUT P1dB vs. RF FREQUENCY
11
1200
1200
RF FREQUENCY (MHz)
14
INPUT P1dB (dBm)
INPUT P1dB (dBm)
TC = +85°C
12
1500
INPUT P1dB vs. RF FREQUENCY
VCC = 3.3V
14
1400
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
15
VCC = 3.0V
55
1200
INPUT P1dB (dBm)
1300
MAX19993 toc58
1200
MAX19993 toc59
55
10
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
13
MAX19993
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 3.3V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 3.3V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC +25°C, unless
otherwise noted.)
TC = +25°C
45
TC = +85°C
40
1300
1400
1500
1600
MAX19993 toc62
MAX19993 toc61
PLO = -6dBm, -3dBm, 0dBm, +3dBm
45
1700
50
VCC = 3.0V, 3.3V, 3.6V
45
40
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
TC = +85°C
-30
VCC = 3.3V
-20
-30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
-10
1700
MAX19993 toc65
TC = +25°C
-10
LO LEAKAGE AT IF PORT (dBm)
VCC = 3.3V
LO LEAKAGE AT IF PORT (dBm)
TC = -40°C
MAX19993 toc64
RF FREQUENCY (MHz)
MAX19993 toc63
LO LEAKAGE AT IF PORT (dBm)
50
40
1200
-10
VCC = 3.3V
CHANNEL ISOLATION vs. RF FREQUENCY
55
CHANNEL ISOLATION (dB)
TC = -40°C
50
CHANNEL ISOLATION vs. RF FREQUENCY
55
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION (dB)
VCC = 3.3V
MAX19993 toc60
CHANNEL ISOLATION vs. RF FREQUENCY
55
VCC = 3.6V
-20
VCC = 3.3V
-30
VCC = 3.0V
-40
-40
1360
1460
1560
-40
1060
1160
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
TC = +85°C
30
TC = -40°C
TC = +25°C
20
1560
1300
1400
1500
RF FREQUENCY (MHz)
1060
1160
1600
1700
1260
1360
1460
1560
LO FREQUENCY (MHz)
VCC = 3.3V
40
30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
20
1200
14
1460
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19993 toc66
VCC = 3.3V
40
1360
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
1260
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19993 toc68
1260
RF-TO-IF ISOLATION (dB)
1160
MAX19993 toc67
1060
RF-TO-IF ISOLATION (dB)
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
40
30
VCC = 3.0V, 3.3V, 3.6V
20
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
TC = +25°C
-40
-50
TC = -40°C
-60
-30
PLO = +3dBm
-40
PLO = 0dBm
-50
PLO = -3dBm
-60
-70
-70
1160
1270
1380
1490
1600
-40
VCC = 3.3V
-50
VCC = 3.0V
-60
-70
1050
1160
1270
1380
1490
1600
1050
1160
1270
1380
1490
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = +25°C
-30
TC = +85°C
-50
-20
PLO = -6dBm
-30
PLO = -3dBm
-40
PLO = +3dBm
-50
-10
1600
MAX19993 toc74
VCC = 3.3V
2LO LEAKAGE AT RF PORT (dBm)
TC = -40°C
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
MAX19993 toc73
LO FREQUENCY (MHz)
-10
-40
VCC = 3.6V
LO FREQUENCY (MHz)
MAX19993 toc72
1050
-30
PLO = -6dBm
TC = +85°C
2LO LEAKAGE AT RF PORT (dBm)
-20
MAX19993 toc71
VCC = 3.3V
LO LEAKAGE AT RF PORT (dBm)
-30
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19993 toc70
VCC = 3.3V
LO LEAKAGE AT RF PORT (dBm)
LO LEAKAGE AT RF PORT (dBm)
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19993 toc69
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
VCC = 3.6V
-30
VCC = 3.3V
-40
VCC = 3.0V
-50
PLO = 0dBm
-60
-60
1380
1490
1600
-60
1050
1160
LO FREQUENCY (MHz)
TC = -40°C
60
TC = +85°C
50
1490
1600
40
1160
1270
1380
LO FREQUENCY (MHz)
1160
VCC = 3.3V
60
PLO = -6dBm, -3dBm, 0dBm, +3dBm
50
1490
1600
1270
1380
1490
1600
LO FREQUENCY (MHz)
40
1050
1050
LO SWITCH ISOLATION vs. LO FREQUENCY
70
LO SWITCH ISOLATION (dB)
MAX19993 toc75
LO SWITCH ISOLATION (dB)
VCC = 3.3V
TC = +25°C
1380
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
70
1270
LO SWITCH ISOLATION vs. LO FREQUENCY
70
MAX19993 toc77
1270
LO SWITCH ISOLATION (dB)
1160
MAX19993 toc76
1050
60
VCC = 3.0V, 3.3V, 3.6V
50
40
1050
1160
1270
1380
LO FREQUENCY (MHz)
1490
1600
1050
1160
1270
1380
1490
1600
LO FREQUENCY (MHz)
15
MAX19993
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 3.3V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). VCC = 3.3V, fRF > fLO for a 140MHz IF, PRF = -5dBm, PLO = 0dBm, TC +25°C, unless
otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
5
0
IF PORT RETURN LOSS (dB)
VCC = 3.3V
IF = 140MHZ
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
15
20
VCC = 3.0V, 3.3V, 3.6V
5
10
MAX19993 toc79
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19993 toc78
RF PORT RETURN LOSS (dB)
0
LO = 1560MHz
15
LO = 1310MHz
25
LO = 1060MHz
20
1300
1400
1500
1600
320
410
500
IF FREQUENCY (MHz)
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
0
LO UNSELECTED PORT RETURN LOSS (dB)
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
20
30
40
VCC = 3.3V
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
20
30
40
50
1000
1200
1400
1600
1800
2000
1000
1200
LO FREQUENCY (MHz)
SUPPLY CURRENT vs. TEMPERATURE (TC)
MAX19993 toc82
VCC = 3.6V
300
SUPPLY CURRENT (mA)
1400
1600
LO FREQUENCY (MHz)
310
290
280
270
260
250
VCC = 3.3V
VCC = 3.0V
240
-40
-15
10
35
TEMPERATURE (°C)
16
230
RF FREQUENCY (MHz)
0
10
140
50
1700
MAX19993 toc80
1200
MAX19993 toc81
30
LO SELECTED PORT RETURN LOSS (dB)
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
60
85
1800
2000
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
LO2
GND
GND
GND
LOSEL
GND
VCC
GND
LO1
TOP VIEW
27
26
25
24
23
22
21
20
19
N.C.
28
18
N.C.
LO_ADJ_M
29
17
LO_ADJ_D
VCC
30
16
VCC
IND_EXTM
31
15
IND_EXTD
IFM-
32
14
IFD-
IFM+
33
13
IFD+
GND
34
12
GND
IFM_SET
35
11
IFD_SET
VCC
36
10
VCC
5
6
7
8
9
GND
TAPDIV
RFDIV
GND
4
VCC
3
GND
2
VCC
1
TAPMAIN
MAX19993
RFMAIN
+
EXPOSED PAD
TQFN
(6mm × 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
17
MAX19993
Pin Configuration
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Pin Description
PIN
NAME
1
RFMAIN
2
TAPMAIN
3, 5, 7, 12,
20, 22, 24,
25, 26, 34
GND
Ground
4, 6, 10, 16,
21, 30, 36
VCC
Power Supply. Bypass to GND with capacitors as close as possible to the pin, as shown in the
Typical Application Circuit.
8
TAPDIV
9
RFDIV
11
IFD_SET
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity IF amplifier. See the Typical Application Circuit.
13, 14
IFD+, IFD-
Diversity Mixer Differential IF Output +/-. Connect pullup inductors from each of these pins to VCC.
See the Typical Application Circuit.
15
IND_EXTD
Diversity External Inductor Connection. Connect to ground through a 0I resistor (0603) as close as
possible to the pin. For improved RF-to-IF and LO-to-IF isolation, contact the factory for details.
17
LO_ADJ_D
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity LO amplifier. See the Typical Application Circuit.
18, 28
N.C.
No Connection. Not internally connected.
19
LO1
Local Oscillator 1 Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
23
LOSEL
27
LO2
29
LO_ADJ_M
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main LO amplifier. See the Typical Application Circuit.
31
IND_EXTM
Main External Inductor Connection. Connect to ground through a 0I resistor (0603) as close as
possible to the pin. For improved RF-to-IF and LO-to-IF isolation, contact the factory for details.
32, 33
IFM-, IFM+
Main Mixer Differential IF Output -/+. Connect pullup inductors from each of these pins to VCC. See
the Typical Application Circuit.
35
IFM_SET
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main IF amplifier. See the Typical Application Circuit.
—
EP
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the noted RF performance.
18
FUNCTION
Main Channel RF Input. Internally matched to 50I. Requires an input DC-blocking capacitor.
Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Diversity Channel RF Input. Internally matched to 50I. Requires an input DC-blocking capacitor.
Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
Local Oscillator 2 Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
The MAX19993 is a dual-channel downconverter
designed to provide up to 6.4dB of conversion gain,
+27dBm input IP3, 15.4dBm 1dB input compression
point, and a noise figure of 9.8dB.
In addition to its high-linearity performance, the device
achieves a high level of component integration. It integrates two double-balanced mixers for two-channel
downconversion. Both the main and diversity channels
include a balun and matching circuitry to allow 50I
single-ended interfaces to the RF ports and the two LO
ports. An integrated single-pole/double-throw (SPDT)
switch provides 50ns switching time between the two LO
inputs with 57dB of LO-to-LO isolation and -38dBm of
LO leakage at the RF port. Furthermore, the integrated
LO buffers provide a high drive level to each mixer core,
reducing the LO drive required at the device‘s inputs
to a range of -6dBm to +3dBm. The IF ports for both
channels incorporate differential outputs for downconversion, which is ideal for providing enhanced 2RF - 2LO
performance.
The device is specified to operate over an RF input range
of 1200MHz to 1700MHz, an LO range of 1000MHz to
1560MHz, and an IF range of 50MHz to 500MHz. The
external IF components set the lower frequency range. See
the Typical Operating Characteristics section for details.
Operation beyond these ranges is possible; see the
Typical Operating Characteristics section for additional
information. Although this device is optimized for lowside LO injection applications, it can operate in highside LO injection modes as well. However, performance degrades as fLO continues to increase. Contact
the factory for a variant with increased high-side LO
performance.
RF Port and Balun
The RF input ports of both the main and diversity
channels are internally matched to 50I, requiring no
external matching components. A DC-blocking capacitor
is required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return
loss is typically better than 19dB over the 1400MHz to
1700MHz RF frequency range.
LO Inputs, Buffer, and Balun
The device is optimized for a 1000MHz to 1560MHz
LO frequency range. As an added feature, the device
includes an internal LO SPDT switch for use in frequencyhopping applications. The switch selects one of the two
single-ended LO ports, allowing the external oscillator
to settle on a particular frequency before it is switched
in. LO switching time is typically 50ns, which is more
than adequate for typical GSM applications. If frequency
hopping is not employed, simply set the switch to
either of the LO inputs. The switch is controlled by a
digital input (LOSEL), where logic-high selects LO1
and logic-low selects LO2. LO1 and LO2 inputs are
internally matched to 50I, requiring only 39pF
DC-blocking capacitors.
If LOSEL is connected directly to a logic source, then
voltage MUST be applied to VCC before digital logic
is applied to LOSEL to avoid damaging the part.
Alternatively, a 1kI resistor can be placed in series at
the LOSEL to limit the input current in applications where
LOSEL is applied before VCC.
The main and diversity channels incorporate a two-stage
LO buffer that allows for a wide-input power range for
the LO drive. The on-chip low-loss baluns, along with LO
buffers, drive the double-balanced mixers. All interfacing
and matching components from the LO inputs to the IF
outputs are integrated on-chip.
High-Linearity Mixer
The core of the device’s dual-channel downconverter
consists of two double-balanced, high-performance
passive mixers. Exceptional linearity is provided by
the large LO swing from the on-chip LO buffers. When
combined with the integrated IF amplifiers, the cascaded
IIP3, 2RF - 2LO rejection, and noise-figure performance
are typically +27dBm, 72dBc, and 9.8dB, respectively.
Differential IF
The device has a 50MHz to 500MHz IF frequency range,
where the low-end frequency depends on the frequency
response of the external IF components. Note that these
differential ports are ideal for providing enhanced IIP2
performance. Single-ended IF applications require a
4:1 (impedance ratio) balun to transform the 200I
differential IF impedance to a 50I single-ended system.
After the balun, the return loss is typically 15dB. The user
can use a differential IF amplifier on the mixer IF ports,
but a DC block is required on both IFD+/IFD- and IFM+/
IFM- ports to keep external DC from entering the IF ports
of the mixer.
19
MAX19993
Detailed Description
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50I.
No matching components are required. The RF port
input return loss is typically better than 19dB over the
1400MHz to 1700MHz RF frequency range and return
loss at the LO ports are typically better than 15dB over
the entire LO range. RF and LO inputs require only
DC-blocking capacitors for interfacing.
The IF output impedance is 200I (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50I single-ended
output. See the Typical Application Circuit.
Reduced-Power Mode
Each channel of the device has two pins (LO_ADJ_D/
LO_ADJ_M, IFD_SET/IFM_SET) that allow external
resistors to set the internal bias currents. Nominal values
for these resistors are given in Table 1. Larger value
resistors can be used to reduce power dissipation at the
expense of some performance loss. If Q1% resistors are
not readily available, substitute with Q5% resistors.
Significant reductions in power consumption can also
be realized by operating the mixer with an optional 3.3V
supply voltage. Doing so reduces the overall power
consumption by approximately 46%. See the 3.3V Supply
AC Electrical Characteristics table and the relevant 3.3V
curves in the Typical Operating Characteristics section.
IND_EXT_ Inductors
The default application circuit calls for connecting
IND_EXT_ (pins 15 and 31) to ground through a 0I
resistor (0603) as close as possible to the pin. For
improved RF-to-IF and LO-to-IF isolation, contact the
factory for details.
20
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF- and IF+ to
ground does not exceed several picofarads. For the best
performance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed pad
MUST be connected to the ground plane of the PCB. It is
suggested that multiple vias be used to connect this pad
to the lower-level ground planes. This method provides a
good RF/thermal-conduction path for the device. Solder
the exposed pad on the bottom of the device package
to the PCB. The MAX19993 evaluation kit can be used
as a reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and
TAPMAIN/TAPDIV with the capacitors shown in the
Typical Application Circuit. See Table 1 for component
values. Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19993’s 36-pin TQFNEP package provides a low thermal-resistance path to
the die. It is important that the PCB on which the device
is mounted be designed to conduct heat from the EP. In
addition, provide the EP with a low-inductance path to
electrical ground. The EP MUST be soldered to a ground
plane on the PCB, either directly or through an array of
plated via holes.
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
VCC
T1
27
4:1
N.C.
C19
C21
LO_ADJ_M
C20
L1
L2
VCC
VCC
R2
VCC
C17
R3
IND_EXTM
IFMIFM+
GND
IFM_SET
VCC
R1
VCC
26
24
IF DIV OUTPUT
23
22
21
LO1
GND
C14
VCC
GND
25
LO1
20
19
4:1
28
18 N.C.
29
17
30
16
EXPOSED PAD
MAX19993
31
L3
GND
LO2
GND
C16
C15
GND
IF MAIN OUTPUT
LO SELECT
LOSEL
LO2
LO_ADJ_D
IND_EXTD
15
32
14
33
13
34
12
35
11
36
10
IFD-
C13
L6
R5
C12
L5
C10
L4
VCC
R6
IFD+
GND
IFD_SET
VCC
VCC
C9
C18
C11
VCC
VCC
T2
R4
VCC
9
C7
VCC
C3
8
RFDIV
7
TAPDIV
6
GND
5
C2
C1
L7
4
GND
3
GND
RFMAIN
2
TAPMAIN
1
VCC
+
C8
VCC
C4
RF MAIN INPUT
C5
L8
C6
RF DIV INPUT
Table 1. Component Values
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
C1, C2, C7, C8,
C14, C16
6
39pF microwave capacitors (0402)
Murata Electronics North America, Inc.
C3, C6
2
0.033FF microwave capacitors (0603)
Murata Electronics North America, Inc.
C4, C5
2
0402, not used
—
C9, C13, C15,
C17, C18
5
0.01FF microwave capacitors (0402)
Murata Electronics North America, Inc.
21
MAX19993
Typical Application Circuit
MAX19993
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Table 1. Component Values (continued)
DESIGNATION
QTY
C10, C11, C12,
C19, C20, C21
6
150pF microwave capacitors (0603)
Murata Electronics North America, Inc.
L1, L2, L4, L5
4
330nH wire-wound high-Q inductors (0805)
Coilcraft, Inc.
L3, L6
2
0I resistors (0603). For improved RF-to-IF and
LO-to-IF isolation, contact factory for details.
Digi-Key Corp.
L7, L8
2
Additional tuning elements (0402, not used)
—
2
681I ±1% resistors (0402). Used for VCC = 5.0V
applications. Larger values can be used to reduce
power at the expense of some performance loss.
Digi-Key Corp.
R1, R4
DESCRIPTION
COMPONENT SUPPLIER
681I ±1% resistors (0402). Used for VCC = 3.3V
applications.
R2, R5
2
1.82kI ±1% resistors (0402). Used for VCC = 5.0V
applications. Larger values can be used to reduce
power at the expense of some performance loss.
Digi-Key Corp.
1.43kI ±1% resistors (0402). Used for VCC = 3.3V
applications.
R3, R6
2
0I resistors (1206)
Digi-Key Corp.
T1, T2
2
4:1 transformers (200:50) TC4-1W-7A
Mini-Circuits
U1
1
MAX19993 IC (36 TQFN-EP)
Maxim Integrated Products, Inc.
Chip Information
PROCESS: SiGe BiCMOS
22
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN
36 Thin QFN-EP
T3666+2
21-0141
90-0049
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
REVISION
NUMBER
REVISION
DATE
0
6/10
DESCRIPTION
Initial release
PAGES
CHANGED
—
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
©
2010 Maxim Integrated Products
23
Maxim is a registered trademark of Maxim Integrated Products, Inc.
MAX19993
Revision History
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