DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS81; BAS82; BAS83 Schottky barrier diodes Product specification Supersedes data of 1996 Sep 30 1998 Jun 24 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a • High breakdown voltage • Guard ring protected • Hermetically-sealed small SMD package • Low diode capacitance. k handbook, halfpage hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering. a APPLICATIONS • Ultra high-speed switching MAM190 • Voltage clamping Cathode indicated by a grey band. • Protection circuits • Blocking diodes. Fig.1 Simplified outline (SOD80C), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage BAS81 − 40 V BAS82 − 50 V BAS83 − 60 V − 30 mA IF continuous forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 150 mA IFSM non-repetitive peak forward current tp = 1 s − 500 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C 1998 Jun 24 2 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.2 IF = 0.1 mA 330 mV IF = 1 mA 410 mV IF = 15 mA 1 V IR reverse current VR = VRmax; see Fig.3 200 nA Cd diode capacitance f = 1 MHz; VR = 2 V; see Fig.4 1.6 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD80 standard mounting conditions. 1998 Jun 24 3 VALUE UNIT 320 K/W Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 GRAPHICAL DATA MGC690 2 10halfpage handbook, MGC689 4 10halfpage handbook, IR (nA) IF (mA) (1) 10 3 (1) (2) (3) 10 2 10 (2) 10 1 1 (3) 10 −1 (1) (2) (3) 10 −1 0 0.2 0.4 0.6 0.8 10 −2 1.0 VF (V) 0 20 (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MGC688 2.0 Cd (pF) 1.5 1.0 0.5 0 0 15 30 45 60 VR (V) f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1998 Jun 24 4 40 VR (V) 60 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 PACKAGE OUTLINE Hermetically sealed glass surface mounted package; 2 connectors k SOD80C a (1) D L L H DIMENSIONS (mm are the original dimensions) 0 UNIT D H L mm 1.60 1.45 3.7 3.3 0.3 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD80C 100H01 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jun 24 5 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 NOTES 1998 Jun 24 6 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 NOTES 1998 Jun 24 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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