Fairchild D217R2801S Dual channel phototransistor Datasheet

MOCD217M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers (Low Input Current)
Features
Description
■ UL Recognized (File #E90700, Volume 2)
The MOCD217M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
■ VDE Recognized (File #136616) (add option “V” for
VDE approval, i.e, MOCD217VM)
■ Low Input Current (specified @ 1mA)
■ Minimum BVCEO of 30 Volts Guaranteed
■ Convenient Plastic SOIC-8 Surface Mountable
Package Style
■ Standard SOIC-8 Footprint, with 0.050" Lead Spacing
■ High Input-Output Isolation of 2500 VAC(rms)
Guaranteed
Applications
■ Interfacing and Coupling Systems of Different
Potentials and Impedances
■ General Purpose Switching Circuits
■ Monitor and Detection Circuits
Schematic
Package Outline
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
Figure 2. Package Outline
ANODE 2 3
6 COLLECTOR 2
5 EMITTER 2
CATHODE 2 4
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
April 2013
Symbol
Rating
Value
Unit
60
mA
Emitter
IF
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
1.0
A
VR
Reverse Voltage
6.0
V
PD
LED Power Dissipation @ TA = 25°C
Derate above 25°C
90
0.8
mW
mW/°C
VCEO
Collector-Emitter Voltage
30
V
VECO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
150
mA
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
150
1.76
mW
mW/°C
IF (pk)
Detector
Total Device
VISO
Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute)
2500
Vac(rms)
PD
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
250
2.94
mW
mW/°C
TA
Ambient Operating Temperature Range
-40 to +100
°C
Storage Temperature Range
-40 to +150
°C
Tstg
Notes:
1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second.
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
2
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
TA = 25°C unless otherwise specified.
Symbol
Parameter
Test Conditions
Min.
Typ.* Max.
Unit
Emitter
VF
Input Forward Voltage
IF = 10 mA
1.05
1.3
V
IR
Reverse Leakage Current
VR = 6.0 V
0.1
100
µA
C
Capacitance
18
pF
Detector
ICEO1
Collector-Emitter Dark Current
ICEO2
VCE = 10 V, TA = 25°C
1.0
VCE = 10 V, TA = 100°C
1.0
50
µA
nA
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 100 µA
30
90
V
BVECO
Emitter-Collector Breakdown
Voltage
IE = 100 µA
7.0
7.8
V
CCE
Collector-Emitter Capacitance
f = 1.0 MHz, VCE = 0 V
7.0
pF
Current Transfer Ratio(4)
IF = 1.0 mA, VCE = 5 V
130
%
Coupled
CTR
VCE (sat) Collector-Emitter Saturation
100
IC = 2.0 mA, IF = 10 mA
0.35
0.4
V
Voltage
ton
Turn-On Time
IC = 2.0 mA, VCC = 10 V, RL = 100 Ω
(Fig. 8)
7.5
µs
toff
Turn-Off Time
IC = 2.0 mA, VCC = 10 V, RL = 100 Ω
(Fig. 8)
5.7
µs
tr
Rise Time
IC = 2.0 mA, VCC = 10 V, RL = 100 Ω
(Fig. 8)
3.2
µs
tf
Fall Time
IC = 2.0 mA, VCC = 10 V, RL = 100 Ω
(Fig. 8)
4.7
µs
VISO
Isolation Surge Voltage(1)(2)(3)
(2)
RISO
Isolation Resistance
CISO
Isolation Capacitance(2)
f = 60 Hz, t = 1 minute
2500
VI-O = 500 V
1011
VI-O = 0 V, f = 1 MHz
Vac(rms)
Ω
0.2
pF
*Typical values at TA = 25°C
Notes:
1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second.
4. Current Transfer Ratio (CTR) = IC / IF x 100%.
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
3
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Electrical Characteristics
1.8
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
VF – FORWARD VOLTAGE (V)
1.7
1.6
1.5
1.4
TA = -55°C
1.3
1.2
TA = 25°C
1.1
TA = 100°C
1.0
1
10
100
VCE = 5V
NORMALIZED TO IF = 10 mA
1
0.1
IF - LED FORWARD CURRENT (mA)
0.01
Figure 3. LED Forward Voltage vs. Forward Current
0.1
1
10
100
IF - LED INPUT CURRENT (mA)
Figure 4. Output Curent vs. Input Current
1.6
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1
NORMALIZED TO TA = 25 o C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I F = 10 mA
NORMALIZED TO VCE = 5 V
0.0
0
120
1
2
3
4
5
6
7
8
9
10
VCE – COLLECTOR-EMITTER VOLTAGE (V)
o
TA – AMBIENT TEMPERATURE ( C)
Figure 6. Output Current vs. Collector - Emitter Voltage
Figure 5. Output Current vs. Ambient Temperature
I CEO – COLLECTOR -EMITTER DARK CURRENT (nA)
10000
VCE = 10 V
1000
100
10
1
0.1
0
20
40
60
80
100
o
TA – AMBIENT TEMPERATURE ( C)
Figure 7. Dark Current vs. Ambient Temperature
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
4
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Typical Performance Curves
WAVEFORMS
VCC = 10 V
INPUT PULSE
IF
IC
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
tr
Adjust IF to produce IC = 2 mA
ton
tf
toff
Figure 8. Switching Time Test Circuit and Waveform
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
5
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
TEST CIRCUIT
8-pin SOIC Surface Mount
8
0.164 (4.16)
0.144 (3.66)
SEATING PLANE
1
0.202 (5.13)
0.182 (4.63)
0.010 (0.25)
0.006 (0.16)
0.143 (3.63)
0.123 (3.13)
0.021 (0.53)
0.011 (0.28)
0.008 (0.20)
0.003 (0.08)
0.244 (6.19)
0.224 (5.69)
0.050 (1.27) Typ.
Lead Coplanarity: 0.004 (0.10) MAX
Recommended Pad Layout
0.024 (0.61)
0.060 (1.52)
0.275 (6.99)
0.155 (3.94)
0.050 (1.27)
Dimensions in inches (mm).
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
6
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Package Dimensions
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Ordering Information
Option
Order Entry Identifier
V
V
R2
R2
R2V
R2V
Description
VDE 0884
Tape and Reel (2500 units per reel)
VDE 0884, Tape and Reel (2500 units per reel)
Marking Information
1
D217
V
X YY S
3
4
2
6
5
Definitions
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘8’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
www.fairchildsemi.com
7
8.0 ± 0.10
2.0 ± 0.05
3.50 ± 0.20
0.30 MAX
Ø1.5 MIN
1.75 ± 0.10
4.0 ± 0.10
5.5 ± 0.05
8.3 ± 0.10
5.20 ± 0.20
0.1 MAX
6.40 ± 0.20
12.0 ± 0.3
Ø1.5 ± 0.1
User Direction of Feed
Dimensions in mm
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
8
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Carrier Tape Specifications
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Reflow Profile
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
tP
Tsmax
tL
Preheat Area
Tsmin
ts
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second maximum
Time 25°C to Peak Temperature
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
8 minutes maximum
www.fairchildsemi.com
9
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
10
www.fairchildsemi.com
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
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