DSK MBR2090PT Dual schottky rectifier Datasheet

Diode Semiconductor Korea MBR2070PT - - - MBR20100PT
VOLTAGE RANGE: 70 - 100 V
CURRENT: 20 A
DUAL SCHOTTKY RECTIFIERS
FEATURES
TO-3P(TO-247AD)
15.8± 0.2
21± 0.5
High current capacity, low forward voltage drop.
5.0± 0.15
4.9± 0.25
6.5± 0.3
High surge capacity.
For use in low voltage, high frequency inverters, free
111 wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
8.0± 0.2
2.0± 0.15
φ3 .6± 0.15
Guard ring for over voltage protection.
PIN
1
3
2
2.4± 0.2
20.4± 0.4
MECHANICAL DATA
Case:JEDEC TO-3P(TO-247AD),molded plastic body
Terminals:Leads, solderable per MIL-STD-750,
11 Method 2026
Polarity: As marked
2.2± 0.15
3.0± 0.1
1.2± 0.15
0.6± 0.1
5.4± 0.15
A1
K
A2
Weight: 0.223 ounce, 6.3 grams
A1
K
A2
Dimensions in millimeters
Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
MBR2070PT MBR2080PT MBR2090PT MBR20100PT UNITS
Maximum recurrent peak reverse voltage
VRRM
70
80
90
100
V
Maximum w orking peak reverse voltage
VRWM
49
56
63
70
V
Maximum DC blocking voltage
VDC
70
80
90
100
V
Maximum average forw ard total device1
111rectified current
@ TC = 133
IF(AV)
20.0
A
Peak forw ard surge current 8.3 ms single half
b sine-w ave superimposed on rated load
IFSM
150.0
A
Maximum forw ard
voltage per leg
(NOTE 1)
0.85
(IF=10A,TC=25 )
(IF=10A,TC=125 )
(IF=20A,TC=25 )
VF
at rated DC blocking voltage
@TA=25
@TA=125
0.95
IR
0.1
6.0
Maximum junction capacitance (NOTE2)
CT
400
Operating junction temperature range
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 175
Storage temperature range
V
0.85
(IF=20A,TC=125 )
Maximum reverse current
0.70
mA
pF
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. VR=5VDC,(test signal range 100KHz to 1MHz
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Diode Semiconductor Korea
FIG.1 -- FORWARD CURRENT DERATING CURVE
MBR2070PT - - - MBR20100PT
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PERLEG
cc
175
PEAK FORWARD SURGE
CURRENT,AMPERES
AVERAGE FORWARD
CURRENT,AMPERES
25
Resistive or inductive Load
20
15
10
5
0
0
50
100
150
T J=T Jmax
8.3ms Single Half Sine Wave
(JEDEC Method)
150
125
100
75
50
25
1
10
CASE TEMPERATURE
NUMBER OF CYCLES AT 60Hz
bn
INSTANTANEOUS REVERSE
CURRENT,MILLIAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
11111vCHARACTERISTICS PER LEG
40
10
TJ =125
1 00
Pulse Width=300µs
1% Duty Cycle
1
TJ=25
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
PER LEG
111
40
TJ=125
10
1
TJ=75
0.1
0.01
TJ=25
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
JUNCTION CAPACITANCE, pF
1FIG.5--TYPICAL JUNCTION CAPACITANCE PER LEG
4000
TJ=25
f=1.0MHz
Vsig=50MVp-p
1000
100
10
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
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