Diode Semiconductor Korea MBR2070PT - - - MBR20100PT VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A DUAL SCHOTTKY RECTIFIERS FEATURES TO-3P(TO-247AD) 15.8± 0.2 21± 0.5 High current capacity, low forward voltage drop. 5.0± 0.15 4.9± 0.25 6.5± 0.3 High surge capacity. For use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. 8.0± 0.2 2.0± 0.15 φ3 .6± 0.15 Guard ring for over voltage protection. PIN 1 3 2 2.4± 0.2 20.4± 0.4 MECHANICAL DATA Case:JEDEC TO-3P(TO-247AD),molded plastic body Terminals:Leads, solderable per MIL-STD-750, 11 Method 2026 Polarity: As marked 2.2± 0.15 3.0± 0.1 1.2± 0.15 0.6± 0.1 5.4± 0.15 A1 K A2 Weight: 0.223 ounce, 6.3 grams A1 K A2 Dimensions in millimeters Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. MBR2070PT MBR2080PT MBR2090PT MBR20100PT UNITS Maximum recurrent peak reverse voltage VRRM 70 80 90 100 V Maximum w orking peak reverse voltage VRWM 49 56 63 70 V Maximum DC blocking voltage VDC 70 80 90 100 V Maximum average forw ard total device1 111rectified current @ TC = 133 IF(AV) 20.0 A Peak forw ard surge current 8.3 ms single half b sine-w ave superimposed on rated load IFSM 150.0 A Maximum forw ard voltage per leg (NOTE 1) 0.85 (IF=10A,TC=25 ) (IF=10A,TC=125 ) (IF=20A,TC=25 ) VF at rated DC blocking voltage @TA=25 @TA=125 0.95 IR 0.1 6.0 Maximum junction capacitance (NOTE2) CT 400 Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 175 Storage temperature range V 0.85 (IF=20A,TC=125 ) Maximum reverse current 0.70 mA pF NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. VR=5VDC,(test signal range 100KHz to 1MHz www.diode.kr Diode Semiconductor Korea FIG.1 -- FORWARD CURRENT DERATING CURVE MBR2070PT - - - MBR20100PT FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PERLEG cc 175 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 25 Resistive or inductive Load 20 15 10 5 0 0 50 100 150 T J=T Jmax 8.3ms Single Half Sine Wave (JEDEC Method) 150 125 100 75 50 25 1 10 CASE TEMPERATURE NUMBER OF CYCLES AT 60Hz bn INSTANTANEOUS REVERSE CURRENT,MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG.3 -- TYPICAL INSTANTANEOUS FORWARD 11111vCHARACTERISTICS PER LEG 40 10 TJ =125 1 00 Pulse Width=300µs 1% Duty Cycle 1 TJ=25 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS PER LEG 111 40 TJ=125 10 1 TJ=75 0.1 0.01 TJ=25 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, JUNCTION CAPACITANCE, pF 1FIG.5--TYPICAL JUNCTION CAPACITANCE PER LEG 4000 TJ=25 f=1.0MHz Vsig=50MVp-p 1000 100 10 0.1 1 10 100 REVERSE VOLTAGE,VOLTS www.diode.kr