DISCRETE SEMICONDUCTORS DATA SHEET M3D082 BRY39 Programmable unijunction transistor/ Silicon controlled switch Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch FEATURES BRY39 PINNING • Silicon controlled switch PIN • Programmable unijunction transistor. APPLICATIONS DESCRIPTION 1 cathode 2 cathode gate 3 anode gate (connected to case) 4 anode • Switching applications such as: – Motor control – Oscillators – Relay replacement a handbook, halfpage 1 – Timers book, halfpage ag 2 – Pulse shapers, etc. 4 kg 3 MSB028 DESCRIPTION k Silicon planar PNPN switch or trigger device in a TO-72 metal package. It is an integrated PNP/NPN transistor pair with all electrodes accessible. MGL168 Fig.1 Simplified outline (TO-72) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT Silicon controlled switch PNP TRANSISTOR VEBO emitter-base voltage open collector −70 V NPN TRANSISTOR VCBO collector-base voltage IERM repetitive peak emitter current Ptot total power dissipation open emitter 70 V −2.5 A Tamb ≤ 25 °C 275 mW Tj junction temperature 150 °C VAK forward on-state voltage IA = 50 mA; IAG = 0; RKG-K = 10 kΩ 1.4 V IH holding current IAG = 10 mA; VBB = −2 V; RKG-K = 10 kΩ 1 mA ton turn-on time 0.25 µs toff turn-off time 15 µs 70 V 175 mA 150 °C 0.2 µA Programmable unijunction transistor VGA gate-anode voltage IA anode current (DC) Tj junction temperature Ip peak point current 1997 Jul 24 Tamb ≤ 25 °C VS = 10 V; RG = 10 kΩ 2 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Tamb ≤ 25 °C MIN. MAX. UNIT Ptot total power dissipation − 275 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Silicon controlled switch VCBO VCER collector-base voltage open emitter PNP − −70 V NPN − 70 V − − V − 70 V − −70 V − − V − −70 V − 5 V − − − 175 PNP − − NPN − 175 mA PNP − 175 mA NPN − −175 mA PNP − 2.5 A NPN − −2.5 A − 70 V − 175 mA collector-emitter voltage RBE = 10 kΩ PNP NPN VCEO collector-emitter voltage open base PNP NPN VEBO emitter-base voltage open collector PNP NPN IC collector current (DC) note 1 PNP NPN ICM IE IERM peak collector current mA note 2 emitter current (DC) repetitive peak emitter current tp = 10 µs; δ = 0.01 Programmable unijunction transistor VGA gate-anode voltage IA anode current (AV) 1997 Jul 24 Tamb ≤ 25 °C 3 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch SYMBOL IARM BRY39 PARAMETER repetitive peak anode current CONDITIONS tp = 10 µs; δ = 0.01 MIN. − MAX. 2.5 UNIT A IASM non-repetitive peak anode current tp = 10 µs; Tj = 150 °C − 3 A dIA/dt rate of rise of anode current IA ≤ 2.5 A − 20 A/µs Notes 1. Provided the IE rating is not exceeded. 2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series resistance of 100 kΩ. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 450 K/W in free air CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Silicon controlled switch INDIVIDUAL PNP TRANSISTOR IB = 0; VCE = −70 V; Tj = 150 °C − −10 µA emitter cut-off current IC = 0; VEB = −70 V; Tj = 150 °C − −10 µA DC current gain IE = 1 mA; VCE = −5 V 3 15 VCE = 70 V; RBE = 10 kΩ − 100 nA VCE = 70 V; RBE = 10 kΩ; Tj = 150 °C − 10 µA ICEO collector cut-off current IEBO hFE INDIVIDUAL NPN TRANSISTOR ICER collector cut-off current IEBO emitter cut-off current IC = 0; VEB = 5 V; Tj = 150 °C − 10 µA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 0.5 V VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA − 0.9 V hFE DC current gain IC = 10 mA; VCE = 2 V 50 − Cc collector capacitance IE = ie = 0; VCB = 20 V − 5 pF Ce emitter capacitance IC = ic = 0; VEB = 1 V; f = 1 MHz − 25 pF fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − MHz COMBINED DEVICE VAK IH 1997 Jul 24 forward on-state voltage holding current RKG-K = 10 kΩ IA = 50 mA; IAG = 0 − 1.4 V IA = 50 mA; IAG = 0; Tj = −55 °C − 1.9 V IA = 1 mA; IAG = 10 mA − 1.2 V − 1 mA VBB = −2 V; IAG = 10 mA; RKG-K = 10 kΩ; see Fig.14 4 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch SYMBOL BRY39 PARAMETER CONDITIONS MIN. MAX. UNIT SWITCHING TIMES ton turn-on time toff turn-off time VKG-K = −0.5 to 4.5 V; RKG-K = 1 kΩ; see Figs 15 and 16 − 0.25 µs VKG-K = −0.5 to 0.5 V; RKG-K = 10 kΩ − 1.5 µs RKG-K = 10 kΩ; see Figs 17 and 18 − 15 µs VS = 10 V; RG = 10 kΩ; see Figs 3 and 8 − 0.2 µA VS = 10 V; RG = 100 kΩ; see Figs 3 and 8 − 0.06 µA VS = 10 V; RG = 10 kΩ; see Figs 3 and 8 − 2 µA VS = 10 V; RG = 100 kΩ; see Figs 3 and 8 − 1 µA Programmable unijunction transistor peak point current Ip Iv valley point current Voffset offset voltage typical curve; IA = 0; for VP and VS see Fig.8 − − V IGAO gate-anode leakage current IK = 0; VGA = 70 V − 10 nA IGKS gate-cathode leakage current VAK = 0; VKG = 70 V − 100 nA VAK anode-cathode voltage IA = 100 mA − 1.4 V VOM peak output voltage VAA = 20 V; C = 10 nF; see Figs 9 and 11 6 − V tr rise time VAA = 20 V; C = 10 nF; see Fig.11 − 80 ns Explanation of symbols For application of the BRY39 as a programmable unijunction transistor, only the anode gate is used. To simplify the symbols, the term gate instead of anode gate will be used (see Fig.2). handbook, halfpage anode a g gate k cathode Fig.2 1997 Jul 24 MBB700 Programmable unijunction transistor explanation of symbols. 5 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 +VB handbook, halfpage handbook, halfpage a IA (1) C 1 nF RG g R2 DUT DUT VS k R1 MEA142 MEA141 Fig.3 Programmable unijunction transistor test circuit for peak and valley points. handbook, halfpage Fig.4 Programmable unijunction transistor with ‘program’ resistors R1 and R2. IA handbook, halfpage RG = VAK DUT VS = DUT R1 R2 R1 R2 R1 R1 R2 I GAO VB VGA MBB697 MBB699 Fig.5 1997 Jul 24 Programmable unijunction transistor equivalent test circuit for characteristics testing. Fig.6 6 Programmable unijunction transistor equivalent test circuit for gate-anode leakage current. Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 IA handbook, halfpage I GKS handbook, halfpage DUT VGK I(V) MBB696 I(P) VS V(P) VAK MEA143 Fig.7 Programmable unijunction transistor equivalent test circuit for gate-cathode leakage current. Fig.8 Programmable unijunction transistor offset voltage. handbook, halfpage VAA handbook, halfpage 1.5 MΩ MBB701 VO VOM 90 % 16 kΩ DUT C VO 20 Ω 27 kΩ 10 % MBB698 tr Fig.9 1997 Jul 24 Programmable unijunction transistor test circuit for peak output voltage. time Fig.10 Programmable unijunction transistor peak output voltage. 7 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 a (anode) (e2 ) e2 handbook, halfpage ag (anode gate) (c 1,b 2) PNP transistor b 1,c 2 kg (cathode gate) (b1 ,c 2) P N P NPN transistor MBB681 e1 k (cathode) (e1 ) MBB680 Fig.11 Silicon controlled switch two transistor equivalent circuit. handbook, halfpage Fig.12 PNPN silicon controlled switch structure. a IA IA handbook, halfpage IAG IAG a ag IKG c 1,b 2 N P N VAK ag RKG-K kg −IK VBB k kg k DUT MBB683 MBB682 Fig.14 Silicon controlled switch equivalent test circuit for holding current. Fig.13 Silicon controlled switch symbol. 1997 Jul 24 8 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 V (V) i handbook, halfpage MBB687 4.5 90 % handbook, halfpage +12 V 0 –0.5 2.7 kΩ VAK 16 kΩ 10 % time +50 V RKG-K VI VAG-K MBB685 time ton Fig.15 Silicon controlled switch test circuit for turn-on time. Fig.16 Silicon controlled switch pulse duration increased until dashed curve disappears. VAK halfpage handbook, MBB686 (V) +12 V handbook, halfpage 12 +50 V 1 kΩ 2.7 kΩ C = Copt 16 kΩ C VAK tq mercury wetted contact 0 C < Copt time RKG-K MBB684 – 12 Fig.18 Silicon controlled switch capacitance increased until C = Copt dashed curve disappears. Fig.17 Silicon controlled switch test circuit for turn-on time. 1997 Jul 24 9 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 MBB583 MBB584 1.8 1.2 handbook, halfpage handbook, halfpage hFE h FE X VAG-K = 5 V X 1.4 0.8 2V 1.0 0.4 0.6 0 0 50 IAG (mA) 0 100 X = value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 °C. 50 100 Tamb ( o C) 150 X = value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 °C. Fig.19 Silicon controlled switch normalized DC current gain as a function of anode gate current. Fig.20 Silicon controlled switch normalized DC current gain as a function of ambient temperature. MBB581 MBB587 1.2 1.2 handbook, halfpage handbook, halfpage IH VAK X X 1.1 1 1 0.8 0.9 0.8 −50 0.6 50 0 50 100 150 Tamb ( o C) X = value of VAK at IA = 1 mA; IAG = 10 mA; VBB = −2 V; RKG-K = 10 kΩ; Tamb = 25 °C. 50 100 150 Tamb (oC) X = value of IH at IAG = 10 mA; VBB = −2 V; RKG-K = 10 kΩ; Tamb = 25 °C. Fig.21 Silicon controlled switch normalized anode-cathode voltage as a function of ambient temperature. 1997 Jul 24 0 Fig.22 Silicon controlled switch normalized holding current as a function of ambient temperature. 10 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 MBB580 300 handbook, halfpage P tot (mW) 200 100 0 0 50 150 Tamb ( o C) 150 Fig.23 Silicon controlled switch power derating curve. MBB582 10 4 handbook, full pagewidth Z thj-a (K/W) 10 3 10 2 10 1 10 5 10 4 10 3 10 2 10 1 1 10 10 2 10 3 Fig.24 Silicon controlled switch thermal impedance as a function of pulse duration. 1997 Jul 24 11 t p (s) 10 4 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 MBB585 10 handbook, full pagewidth IA (A) δ = 0.01 0.02 0.05 1 0.1 0.2 0.5 10−1 10−2 10−2 10−1 1 10 tp (ms) 102 Tamb = 25 °C. Fig.25 Silicon controlled switch anode current as a function of pulse duration. MBB586 10 handbook, full pagewidth IA (A) δ = 0.01 0.02 1 0.05 0.1 0.2 0.5 10−1 10−2 10−2 10−1 1 10 tp (ms) Tamb = 70 °C. Fig.26 Silicon controlled switch anode current as a function of pulse duration. 1997 Jul 24 12 102 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 4 leads SOT18/9 α j seating plane B w M A M B M 1 b 4 k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.46 0.42 5.45 5.30 4.70 4.55 1.05 0.95 1.0 0.9 14.5 13.5 0.36 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/9 B12/C7 type 3 TO-72 1997 Jul 24 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 13 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 24 14 Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch BRY39 NOTES 1997 Jul 24 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117047/00/01/pp16 Date of release: 1997 Jul 24 Document order number: 9397 750 02639