SFF7002KA2GW Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 300 mA 60 Volts 2 Ω Dual N-Channel Logic Level TrenchFET MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF7002KA2 __ __ │ │ │ │ │ └ Screening 2/ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package 3/ GW = GULLWING • • • • • Features: Low On-resistance, < 2 ohm Low Input Capacitance, < 25 pF Low threshold voltage, < 2 V Fast switching, < 25 ns TX, TXV, and S-Level Screening Available. Consult Factory Maximum Ratings Symbol Value Units Gate – Source Voltage VGS 20 Volts VDS 60 Volts ID 300 190 mA IDM 800 mA PD 350 500 mW mW Maximum Thermal Resistance, Junction to PCB RΘJ-PCB 5/ 250 ºC/W Operating & Storage Temperature TOP & TSTG -65 to +200 ºC Drain to Source Voltage o Continuous Drain Current TA= 25 C TA= 100oC Instantaneous (pulsed) Drain Current, Tj limited Per Device Total Power Dissipation @ TA= 25oC PACKAGE OUTLINE: GULLWING (GW) 2x .050 (=.100) .015 3x .015 .015±.010 PIN 6 PIN 4 PIN 4 6x .010 PIN 6 6x .030 SSDI .125 .193 .350 ±.010 .025 PIN 3 PIN 3 PIN 1 .034 5x R.018 PIN 1 .107 .040 ±.010 .107 .010 .130 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 6x R.010 .033 .035 DATA SHEET #: FT0024A DOC SFF7002KA2GW Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 4/ Symbol Min Typ Max Units Gate – Source Breakdown Voltage IG = 10 µA, VDS = 0 V BVDSS 60 70 –– Volts Gate to Source Threshold Voltage VDS = VGS , ID = 0.25 mA VGS(th) 1.0 2.0 2.5 Volts 0.0005 10 150 100 1000 uA nA nA nA 10 1 100 500 nA uA nA uA Gate to Source Leakage Current VGS = +/-20 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V VGS = +/-5 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V, TA = 85ºC IGSS VDS = 50 V, VGS = 0 V VDS = 60 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TA = 85ºC VDS = 60 V, VGS = 0 V,TA = 125ºC IDSS VDS = 7.5 V, VGS = 10 V VDS = 4.5 V, VGS = 10 V VDS = 25 V, VGS = 10 V ID(ON) Drain – Source On-Resistance ID = 500 mA, VGS = 10 V ID = 200 mA, VGS = 10 V ID = 50 mA, VGS = 5 V RDS(ON) Transconductance ID = 200 mA, VDS = 10 V GFS IS = 200 mA, VGS = 0 V VSD Total Gate Charge VDS = 10 V, VGS = 4.5 V, ID= 250 mA Qg - Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Ciss –– Zero Gate Voltage Drain Current On-state Drain Current Body Diode Forward Voltage 0.4 800 500 - 2.1 mA mA A 2.8 4.0 3.5 3.5 - Ω Ω Ω 100 mS 1.3 V 0.6 nC 30 - pF Output Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Coss –– 6 - pF Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Crss –– 2.5 - pF tON –– 10 25 ns tOFF –– 13 35 ns Turn-on time Turn-off time VDD = 30 V, ID = 200 mA, RL = 150 Ω , RG = 10 Ω, VG= 10 V NOTES: * Pulse Test: Pulse Width = 100 µsec, Duty Cycle = 2% 3/ For Package Outlines Contact Factory. 1/ For Ordering Information, Price, and Availability Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC 2/ Screening per MIL-PRF-19500 5/ Mounted on FR1 PCB Available Part Numbers: PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Gate Source Drain SFF7002KA2GW Package Gullwing Pin 1 Drain NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0024A Pin 5 Gate Pin 6 Source DOC