WILLAS FM120-M+ MMBD4148WTHRU SOT-323 Plastic-Encapsulate DIODE FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SWITCHING DIODE surface mounted application in order to • Low profile SOT-323 optimize board space. • Low power loss, high efficiency. FEATURES • High current capability, low forward voltage drop. z Speed High Switching surge capability. •Fast Guardring for overvoltage protection. Applications •For z General Purpose Switching • Ultra high-speed switching. z High Conductance • Silicon epitaxial planar chip, metal silicon junction. z package isenvironmental available standards of Lead-free parts meet •Pb-Free MIL-STD-19500 /228 RoHS product for packing code suffix ”G” • RoHS product for packing code suffix "G" Halogen freeproduct product for packing code"H" suffix “H” Halogen free for packing code suffix z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Moisture Sensitivity Mechanical dataLevel 1 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case Marking: A2: Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum RatingsMethod and Electrical Characteristics, Single Diode @TA=25℃ 2026 • Polarity : Indicated by cathode band Parameter • Mounting Position : Any Non-Repetitive reverse voltage • Weight Peak : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) Symbol Limits Unit VRM 100 V VRRM Peak Repetitive Peak reverse voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 75 Working Peak Reverse Voltage VRWM Ratings at 25℃ ambient DC Blocking Voltagetemperature unless otherwise specified. VR Single phase half wave, 60Hz, resistive of inductive load. RMS Reverseload, Voltage For capacitive derate current by 20% Average Rectified Output Current Marking Code Maximum Recurrent Peakcurrent Reverse@=1.0μs Voltage Peak forward surge Maximum DC Blocking Voltage 53 VR(RMS) V 300 FM150-MH FM160-MH FM180-MH FM1100-MH mA IFM FM120-MH FM130-MH FM140-MH FM1150-MH FM1200-MH U SYMBOL Forward Continuous Current RATINGS Maximum RMS Voltage V @=1.0s Power Dissipation 12 20 13 30 150 14 15 50 16 60 18 80 mA 10 VRRM 100 115 150 120 200 Vo IFSM VRMS 14 21 28 35 42 56 A70 105 140 Vo VDC 20 30 40 50 60 80 100 150 200 Vo IO IO Maximum Average Forward Rectified Current 1.0 200 Junction temperature IFSMTj 150 30 Storage temperature Typical Thermal Resistance (Note 2) RΘJASTG T -65~+150 40 120 superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless specified) -55otherwise to +125 Operating Temperature Range TJ Storage Temperature Range Symbol CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ Reverse voltage leakage current IR IR NOTES: Test conditions IR= 10µA 0.50 VR=75V VR=20V VF IF=1mA IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0, f=1MHz Reveres recovery time trr 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2-Forward Thermal Resistance voltageFrom Junction to Ambient 2012-06 2012-1 ℃ Am ℃ ℃ P -55 to +150 ℃ MIN ℃ MAX UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN V(BR) F V R Maximum Voltage voltage at 1.0A DC ReverseForward breakdown Am K/W - 65 to +175 TSTG Parameter mW 1.0 625 RθJA Thermal Resistance Junction to Ambient Peak Forward Surge Current 8.3 ms single half sine-wave PD 40 2.0 IF=IR=10mA,Irr=0.1×IR, RL=100Ω 0.70 75 0.85 V0.9 0.92 0.5 10 1 µA 25 nA 0.715 0.855 1 1.25 V 2 pF 4 nS Vo mA WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148WTHRU SOT-323 Plastic-Encapsulate DIODE FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Typical Characteristics • Batch process design, excellent power dissipation offers Features better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vol Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol IO 1.0 Am IFSM 30 Am RΘJA 40 120 ℃/ Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148WTHRU SOT-323 Plastic-Encapsulate DIODE FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-323 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .070(1.80) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRRM 12 20 13 30 14 40 15 50 .047(1.20) VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) .004(0.10)MAX. Storage Temperature Range IFSM 30 Am RΘJA 40 120 VF Maximum Average Reverse Current at @T A=25℃ IR .016(0.40) .008(0.20) @T A=125℃ NOTES: ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage -55 to +125 TSTG CHARACTERISTICS Vo Am TJ Operating Temperature Range 120 200 1.0 CJ Typical Junction Capacitance (Note 1) 115 150 IO Maximum Average Forward Rectified Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .043(1.10) .032(0.80) Marking Code .010(0.25) 16 18 10 .003(0.08) 60 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 0.70 0.85 0.9 0.92 0.5 10 Vo mA 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.