AOSMD AO3400L N-channel enhancement mode field effect transistor Datasheet

AO3400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3400 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400 is Pb-free
(meets ROHS & Sony 259 specifications). AO3400L
is a Green Product ordering option. AO3400 and
AO3400L are electrically identical.
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 33mΩ (VGS = 4.5V)
RDS(ON) < 52mΩ (VGS = 2.5V)
TO-236
(SOT-23)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
Junction and Storage Temperature Range
A
Alpha & Omega Semiconductor, Ltd.
W
1
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
30
°C
-55 to 150
Symbol
A
V
1.4
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
±12
4.9
ID
IDM
TA=25°C
A
Units
V
5.8
TA=70°C
Pulsed Drain Current B
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
AO3400
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
5
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
A
VGS=4.5V, ID=5A
27.3
33
mΩ
VGS=2.5V, ID=4A
43.3
52
mΩ
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
1.4
28
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Rg
nA
39
Forward Transconductance
Crss
100
32
VSD
Output Capacitance
1.1
µA
22.8
TJ=125°C
gFS
Coss
V
TJ=55°C
VGS=10V, ID=5.8A
IS
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
10
15
0.71
823
mΩ
S
1
V
2.5
A
1030
pF
VGS=0V, VDS=15V, f=1MHz
99
VGS=0V, VDS=0V, f=1MHz
1.2
3.6
Ω
9.7
12
nC
pF
77
VGS=4.5V, VDS=15V, ID=5.8A
1.6
Qgd
Gate Drain Charge
3.1
tD(on)
Turn-On DelayTime
3.3
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
pF
nC
nC
5
ns
4.8
7
ns
26.3
40
ns
4.1
6
ns
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
16
20
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
8.9
12
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
10V
3V
VDS=5V
16
20
4.5V
2.5V
12
ID(A)
ID (A)
15
8
10
125°C
VGS=2V
5
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
0
60
Normalized On-Resistance
RDS(ON) (mΩ)
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
1.8
50
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
10
1.6
VGS=4.5V
1.4
VGS=10V
1.2
VGS=2.5V
1
0.8
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
60
1.0E+00
ID=5A
1.0E-01
50
125°C
IS (A)
RDS(ON) (mΩ)
25°C
4
40
30
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
1.0E-05
1.0E-06
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=5A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
Crss
200
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
TJ(Max)=150°C
TA=25°C
30
100µs
Power (W)
ID (Amps)
15
40
TJ(Max)=150°C
TA=25°C
1ms
0.1s
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
10.0 limited
5
10ms
1.0
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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