BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 337 BC 338 Collector-Emitter-voltage B open VCE0 45 V 25 V Collector-Base-voltage E open VCB0 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (DC) IC 800 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 55…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 1 V, IC = 100 mA Group -16 hFE 100 160 250 Group -25 hFE 160 250 400 Group -40 hFE 250 400 630 Collector-Emitter cutoff current – Kollektorreststrom 1 VCE = 40 V BC 337 ICES – – 200 nA VCE = 20 V BC 338 ICES – – 200 nA VCE = 40 V, Tj = 125/C BC 337 ICES – – 10 :A VCE = 20 V, Tj = 125/C BC 338 ICES – – 10 :A ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 4 01.11.2003 General Purpose Transistors BC 337 / BC 338 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung IC = 10 mA IC = 0.1 mA BC 337 V(BR)CES 40 V – – BC 338 V(BR)CES 20 V – – BC 337 V(BR)CES 50 V – – BC 338 V(BR)CES 30 V – – V(BR)EB0 5V – – VCEsat – – 0.7 V VBE – – 1.2 V fT – 100 MHz – CCB0 – 12 pF – Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung IE = 10 :A Collector saturation volt. – Kollektor-Sättigungsspannung IC = 500 mA, IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung VCE = 1 V, IC = 300 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Cap. – Kollektor-Basis-Kap. VCB = 10 V, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 200 K/W 1) RthA BC 327 / BC 328 BC 337-16 BC 338-16 BC 337-25 BC 338-25 BC337-40 BC338-40 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003 5