INCHANGE Semiconductor Product Specification MUR840 Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling diodes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 400 V VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current (Rated VR) 8 A IFM Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) 16 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 A Junction Temperature -65~175 ℃ Storage Temperature Range -65~175 ℃ TJ Tstg isc website：www.iscsemi.cn 1 INCHANGE Semiconductor Product Specification MUR840 Ultrafast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT 1.68 V VF Maximum Instantaneous Forward Voltage IF= 8A IR Maximum Instantaneous Reverse Current VRRM= 400V 3 μA trr Maximum Reverse Recovery Time IF= 0.5A, IR= 1A, Irr= 0.25A 60 ns isc website：www.iscsemi.cn 2