isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF511 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 80 V ±20 V ID Drain Current-Continuous 5.6 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 43 W Tj Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ MAX UNIT Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF511 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 80 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4 V VGS= 10V; ID= 5.6A 0.74 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS=0 250 uA VSD Forward On-Voltage IS= 5.6A; VGS=0 2.5 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 135 pF 80 pF 20 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr Td(off) Tf PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time VDD=50V,ID=5.6A VGS=10V,RGEN=24Ω RGS=24Ω Fall Time isc website：www.iscsemi.cn PDF pdfFactory Pro CONDITIONS 2 MIN TYP MAX UNIT 8 11 ns 25 36 ns 15 21 ns 12 21 ns isc & iscsemi is registered trademark www.fineprint.cn