Zetex FZT955 Pnp silicon planar high current (high performance) transistor Datasheet

SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
FZT955
FZT956
ISSUE 2 – OCTOBER 1995
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
C
E
PARTMARKING DETAILS –
DEVICE TYPE IN FULL
COMPLEMENTARY TYPES – FZT955 - FZT855
FZT956 - N/A
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT955
FZT956
UNIT
Collector-Base Voltage
VCBO
-180
-220
V
Collector-Emitter Voltage
VCEO
-140
-200
V
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
-10
-5
A
Continuous Collector Current
IC
-4
-2
A
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature
Range
Tj:Tstg
-6
V
3
W
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 284
FZT955
FZT955
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
-180
-210
MAX.
TYPICAL CHARACTERISTICS
UNIT CONDITIONS.
V
IC=-100µ A
IC/IB=50
1.6
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
-6
V
-170
V
-8
V
IC=-1µ A, RB ≤ 1kΩ
IC=-10mA*
IE=-100µ A
1.2
1.0
0.8
0.6
0.4
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
Current Transfer Ratio
hFE
nA
VCB=-150V
VCB=-150V,Tamb=100°C
-10
nA
VEB=-6V
-30
-70
-110
-275
-60
-120
-150
-370
mV
mV
mV
mV
IC=-100mA, IB=-5mA*
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
-970
-1110
mV
IC=-3A, IB=-300mA*
fT
100
100
75
200
200
140
10
110
-950
mV
1.4
Output Capacitance
Cobo
40
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
68
1030
ns
ns
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 285
0.6
0
10 20
0.001
0.01
VCE=5V
1
-55°C
+25°C
+100°C
+175°C
1.6
300
10 20
IC/IB=10
1.4
1.0
200
0.8
0.6
100
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.001
0.01
0.1
10 20
1
0
0.001
1.6
1.4
0.1
1
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=5V
1.2
1.0
0.8
0.6
0.4
0.2
0.001
0.01
IC - Collector Current (Amps)
10
0
0.1
IC - Collector Current (Amps)
1.2
IC =-3A, VCE=-5V*
MHz IC=-100mA, VCE=-10V
f=50MHz
0.8
VCE(sat) v IC
+100°C
+25°C
-55°C
1.6
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
300
1.0
VCE(sat) v IC
0
-830
1
VBE(sat) - (Volts)
VCE(sat)
µA
0.1
IC - Collector Current (Amps)
Collector-Emitter Saturation
Voltage
-50
-1
0.01
hFE - Typical Gain
IEBO
VCB=-150V
VCB=-150V,Tamb=100°C
1.2
IC - Collector Current (Amps)
hFE - Normalised Gain
ICER
R ≤ 1kΩ
nA
µA
IC/IB=10
0.2
0.001
-50
-1
1.4
0.4
0.2
0
Emitter Cut-Off Current
Transition Frequency
-140
-210
VBE - (Volts)
Collector Cut-Off Current
-180
1.6
VCE(sat) - (Volts)
V(BR)CER
VCE(sat) - (Volts)
Collector-Emitter
Breakdown Voltage
-55°C
+25°C
+175°C
Tamb=25°C
IC/IB=10
1.4
0.01
0.1
1
10 20
Single Pulse Test at Tamb=25°C
1
0.1
0.01
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3 - 286
10 20
1000
FZT955
FZT955
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
-180
-210
MAX.
TYPICAL CHARACTERISTICS
UNIT CONDITIONS.
V
IC=-100µ A
IC/IB=50
1.6
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
-6
V
-170
V
-8
V
IC=-1µ A, RB ≤ 1kΩ
IC=-10mA*
IE=-100µ A
1.2
1.0
0.8
0.6
0.4
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
Current Transfer Ratio
hFE
nA
VCB=-150V
VCB=-150V,Tamb=100°C
-10
nA
VEB=-6V
-30
-70
-110
-275
-60
-120
-150
-370
mV
mV
mV
mV
IC=-100mA, IB=-5mA*
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
-970
-1110
mV
IC=-3A, IB=-300mA*
fT
100
100
75
200
200
140
10
110
-950
mV
1.4
Output Capacitance
Cobo
40
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
68
1030
ns
ns
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 285
0.6
0
10 20
0.001
0.01
VCE=5V
1
-55°C
+25°C
+100°C
+175°C
1.6
300
10 20
IC/IB=10
1.4
1.0
200
0.8
0.6
100
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.001
0.01
0.1
10 20
1
0
0.001
1.6
1.4
0.1
1
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=5V
1.2
1.0
0.8
0.6
0.4
0.2
0.001
0.01
IC - Collector Current (Amps)
10
0
0.1
IC - Collector Current (Amps)
1.2
IC =-3A, VCE=-5V*
MHz IC=-100mA, VCE=-10V
f=50MHz
0.8
VCE(sat) v IC
+100°C
+25°C
-55°C
1.6
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
300
1.0
VCE(sat) v IC
0
-830
1
VBE(sat) - (Volts)
VCE(sat)
µA
0.1
IC - Collector Current (Amps)
Collector-Emitter Saturation
Voltage
-50
-1
0.01
hFE - Typical Gain
IEBO
VCB=-150V
VCB=-150V,Tamb=100°C
1.2
IC - Collector Current (Amps)
hFE - Normalised Gain
ICER
R ≤ 1kΩ
nA
µA
IC/IB=10
0.2
0.001
-50
-1
1.4
0.4
0.2
0
Emitter Cut-Off Current
Transition Frequency
-140
-210
VBE - (Volts)
Collector Cut-Off Current
-180
1.6
VCE(sat) - (Volts)
V(BR)CER
VCE(sat) - (Volts)
Collector-Emitter
Breakdown Voltage
-55°C
+25°C
+175°C
Tamb=25°C
IC/IB=10
1.4
0.01
0.1
1
10 20
Single Pulse Test at Tamb=25°C
1
0.1
0.01
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3 - 286
10 20
1000
FZT956
FZT956
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
-220
-300
Collector-Emitter
Breakdown Voltage
V(BR)CER
V
IC=-100µ A
-240
V
-6
-8
V
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-200V
VCB=-200V,Tamb=100°C
Collector Cut-Off Current
ICER
R ≤ 1kΩ
-50
-1
nA
µA
VCB=-200V
VCB=-200V,Tamb=100°C
1.0
0.6
0.4
0.4
0.2
0.2
VBE(on)
Static Forward
Current Transfer Ratio
hFE
IC=-100mA,IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-400mA*
-970
-1110
mV
IC=-2A, IB=-400mA
-810
100
100
50
200
200
150
10
-950
mV
IC=-2A, VCE=-5V*
fT
110
MHz
Output Capacitance
Cobo
32
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
67
1140
ns
ns
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCE=1V
300
1
200
0.8
0.6
10
IC /IB =10
1.2
1.0
0.8
0.6
100
0.4
0.2
0.4
0.2
0.001
0.01
0.1
10
1
20
0
1.4
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
Single Pulse Test Tamb=25C
10
-55°C
+25°C
+100°C
+175°C
1.6
VCE=1V
1
1.2
1.0
DC
1s
100ms
10ms
1ms
100µs
0.8
0.1
0.6
0.4
0.2
0
20
1.4
0.01
0.001
0.01
0.1
1
10
20
IC - Collector Current (Amps)
1
10
100
VCE - Collector Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 287
0.1
-55°C
+25°C
+100°C
+175°C
1.6
0.001
IC=-100mA, VCE=-10V
f=50MHz
0.01
VCE(sat) v IC
1.0
0
0.001
VCE(sat) v IC
1.2
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-5A, VCE=-5V*
300
0
20
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.4
10
- (Volts)
mV
mV
mV
1
- Typical Gain
-50
-165
-275
0.1
V
Base-Emitter
Turn-On Voltage
-30
-120
-168
h
VBE(sat)
VEB=-6V
0.01
IC - Collector Current (Amps)
h
VCE(sat)
nA
1.0
0.8
1.6
- Normalised Gain
-10
IEBO
1.2
0.6
0.001
IC /IB =10
1.4
0.8
0
Base-Emitter
Saturation Voltage
Transition Frequency
1.2
IE=-100µ A
- (Volts)
Collector-Emitter Saturation
Voltage
1.4
IC=-10mA*
V(BR)EBO
1.6
- (Volts)
IC=-1µ A, RB ≤ 1kΩ
- (Volts)
V
-55°C
+25°C
+175°C
Tamb=25°C
IC /IB=10
V
-200
-300
V
V(BR)CEO
-220
Emitter-Base Breakdown
Voltage
Emitter Cut-Off Current
IC /IB=50
1.6
V
Collector-Emitter
Breakdown Voltage
TYPICAL CHARACTERISTICS
MAX. UNIT CONDITIONS.
3 - 288
1000
20
FZT956
FZT956
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
-220
-300
Collector-Emitter
Breakdown Voltage
V(BR)CER
V
IC=-100µ A
-240
V
-6
-8
V
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-200V
VCB=-200V,Tamb=100°C
Collector Cut-Off Current
ICER
R ≤ 1kΩ
-50
-1
nA
µA
VCB=-200V
VCB=-200V,Tamb=100°C
1.0
0.6
0.4
0.4
0.2
0.2
VBE(on)
Static Forward
Current Transfer Ratio
hFE
IC=-100mA,IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-400mA*
-970
-1110
mV
IC=-2A, IB=-400mA
-810
100
100
50
200
200
150
10
-950
mV
IC=-2A, VCE=-5V*
fT
110
MHz
Output Capacitance
Cobo
32
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
67
1140
ns
ns
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCE=1V
300
1
200
0.8
0.6
10
IC /IB =10
1.2
1.0
0.8
0.6
100
0.4
0.2
0.4
0.2
0.001
0.01
0.1
10
1
20
0
1.4
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
Single Pulse Test Tamb=25C
10
-55°C
+25°C
+100°C
+175°C
1.6
VCE=1V
1
1.2
1.0
DC
1s
100ms
10ms
1ms
100µs
0.8
0.1
0.6
0.4
0.2
0
20
1.4
0.01
0.001
0.01
0.1
1
10
20
IC - Collector Current (Amps)
1
10
100
VCE - Collector Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 287
0.1
-55°C
+25°C
+100°C
+175°C
1.6
0.001
IC=-100mA, VCE=-10V
f=50MHz
0.01
VCE(sat) v IC
1.0
0
0.001
VCE(sat) v IC
1.2
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-5A, VCE=-5V*
300
0
20
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.4
10
- (Volts)
mV
mV
mV
1
- Typical Gain
-50
-165
-275
0.1
V
Base-Emitter
Turn-On Voltage
-30
-120
-168
h
VBE(sat)
VEB=-6V
0.01
IC - Collector Current (Amps)
h
VCE(sat)
nA
1.0
0.8
1.6
- Normalised Gain
-10
IEBO
1.2
0.6
0.001
IC /IB =10
1.4
0.8
0
Base-Emitter
Saturation Voltage
Transition Frequency
1.2
IE=-100µ A
- (Volts)
Collector-Emitter Saturation
Voltage
1.4
IC=-10mA*
V(BR)EBO
1.6
- (Volts)
IC=-1µ A, RB ≤ 1kΩ
- (Volts)
V
-55°C
+25°C
+175°C
Tamb=25°C
IC /IB=10
V
-200
-300
V
V(BR)CEO
-220
Emitter-Base Breakdown
Voltage
Emitter Cut-Off Current
IC /IB=50
1.6
V
Collector-Emitter
Breakdown Voltage
TYPICAL CHARACTERISTICS
MAX. UNIT CONDITIONS.
3 - 288
1000
20
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