SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT955 FZT956 ISSUE 2 OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C E PARTMARKING DETAILS DEVICE TYPE IN FULL COMPLEMENTARY TYPES FZT955 - FZT855 FZT956 - N/A C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT955 FZT956 UNIT Collector-Base Voltage VCBO -180 -220 V Collector-Emitter Voltage VCEO -140 -200 V Emitter-Base Voltage VEBO Peak Pulse Current ICM -10 -5 A Continuous Collector Current IC -4 -2 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -6 V 3 W -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 284 FZT955 FZT955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -180 -210 MAX. TYPICAL CHARACTERISTICS UNIT CONDITIONS. V IC=-100µ A IC/IB=50 1.6 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -6 V -170 V -8 V IC=-1µ A, RB ≤ 1kΩ IC=-10mA* IE=-100µ A 1.2 1.0 0.8 0.6 0.4 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE nA VCB=-150V VCB=-150V,Tamb=100°C -10 nA VEB=-6V -30 -70 -110 -275 -60 -120 -150 -370 mV mV mV mV IC=-100mA, IB=-5mA* IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* -970 -1110 mV IC=-3A, IB=-300mA* fT 100 100 75 200 200 140 10 110 -950 mV 1.4 Output Capacitance Cobo 40 pF VCB=-20V, f=1MHz Switching Times ton toff 68 1030 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 285 0.6 0 10 20 0.001 0.01 VCE=5V 1 -55°C +25°C +100°C +175°C 1.6 300 10 20 IC/IB=10 1.4 1.0 200 0.8 0.6 100 0.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 10 20 1 0 0.001 1.6 1.4 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=5V 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 IC - Collector Current (Amps) 10 0 0.1 IC - Collector Current (Amps) 1.2 IC =-3A, VCE=-5V* MHz IC=-100mA, VCE=-10V f=50MHz 0.8 VCE(sat) v IC +100°C +25°C -55°C 1.6 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V* 300 1.0 VCE(sat) v IC 0 -830 1 VBE(sat) - (Volts) VCE(sat) µA 0.1 IC - Collector Current (Amps) Collector-Emitter Saturation Voltage -50 -1 0.01 hFE - Typical Gain IEBO VCB=-150V VCB=-150V,Tamb=100°C 1.2 IC - Collector Current (Amps) hFE - Normalised Gain ICER R ≤ 1kΩ nA µA IC/IB=10 0.2 0.001 -50 -1 1.4 0.4 0.2 0 Emitter Cut-Off Current Transition Frequency -140 -210 VBE - (Volts) Collector Cut-Off Current -180 1.6 VCE(sat) - (Volts) V(BR)CER VCE(sat) - (Volts) Collector-Emitter Breakdown Voltage -55°C +25°C +175°C Tamb=25°C IC/IB=10 1.4 0.01 0.1 1 10 20 Single Pulse Test at Tamb=25°C 1 0.1 0.01 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 286 10 20 1000 FZT955 FZT955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -180 -210 MAX. TYPICAL CHARACTERISTICS UNIT CONDITIONS. V IC=-100µ A IC/IB=50 1.6 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -6 V -170 V -8 V IC=-1µ A, RB ≤ 1kΩ IC=-10mA* IE=-100µ A 1.2 1.0 0.8 0.6 0.4 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE nA VCB=-150V VCB=-150V,Tamb=100°C -10 nA VEB=-6V -30 -70 -110 -275 -60 -120 -150 -370 mV mV mV mV IC=-100mA, IB=-5mA* IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* -970 -1110 mV IC=-3A, IB=-300mA* fT 100 100 75 200 200 140 10 110 -950 mV 1.4 Output Capacitance Cobo 40 pF VCB=-20V, f=1MHz Switching Times ton toff 68 1030 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 285 0.6 0 10 20 0.001 0.01 VCE=5V 1 -55°C +25°C +100°C +175°C 1.6 300 10 20 IC/IB=10 1.4 1.0 200 0.8 0.6 100 0.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 10 20 1 0 0.001 1.6 1.4 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=5V 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 IC - Collector Current (Amps) 10 0 0.1 IC - Collector Current (Amps) 1.2 IC =-3A, VCE=-5V* MHz IC=-100mA, VCE=-10V f=50MHz 0.8 VCE(sat) v IC +100°C +25°C -55°C 1.6 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V* 300 1.0 VCE(sat) v IC 0 -830 1 VBE(sat) - (Volts) VCE(sat) µA 0.1 IC - Collector Current (Amps) Collector-Emitter Saturation Voltage -50 -1 0.01 hFE - Typical Gain IEBO VCB=-150V VCB=-150V,Tamb=100°C 1.2 IC - Collector Current (Amps) hFE - Normalised Gain ICER R ≤ 1kΩ nA µA IC/IB=10 0.2 0.001 -50 -1 1.4 0.4 0.2 0 Emitter Cut-Off Current Transition Frequency -140 -210 VBE - (Volts) Collector Cut-Off Current -180 1.6 VCE(sat) - (Volts) V(BR)CER VCE(sat) - (Volts) Collector-Emitter Breakdown Voltage -55°C +25°C +175°C Tamb=25°C IC/IB=10 1.4 0.01 0.1 1 10 20 Single Pulse Test at Tamb=25°C 1 0.1 0.01 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 286 10 20 1000 FZT956 FZT956 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -220 -300 Collector-Emitter Breakdown Voltage V(BR)CER V IC=-100µ A -240 V -6 -8 V Collector Cut-Off Current ICBO -50 -1 nA µA VCB=-200V VCB=-200V,Tamb=100°C Collector Cut-Off Current ICER R ≤ 1kΩ -50 -1 nA µA VCB=-200V VCB=-200V,Tamb=100°C 1.0 0.6 0.4 0.4 0.2 0.2 VBE(on) Static Forward Current Transfer Ratio hFE IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* -970 -1110 mV IC=-2A, IB=-400mA -810 100 100 50 200 200 150 10 -950 mV IC=-2A, VCE=-5V* fT 110 MHz Output Capacitance Cobo 32 pF VCB=-20V, f=1MHz Switching Times ton toff 67 1140 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device VCE=1V 300 1 200 0.8 0.6 10 IC /IB =10 1.2 1.0 0.8 0.6 100 0.4 0.2 0.4 0.2 0.001 0.01 0.1 10 1 20 0 1.4 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 Single Pulse Test Tamb=25C 10 -55°C +25°C +100°C +175°C 1.6 VCE=1V 1 1.2 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.1 0.6 0.4 0.2 0 20 1.4 0.01 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) 1 10 100 VCE - Collector Voltage (V) Safe Operating Area VBE(on) v IC 3 - 287 0.1 -55°C +25°C +100°C +175°C 1.6 0.001 IC=-100mA, VCE=-10V f=50MHz 0.01 VCE(sat) v IC 1.0 0 0.001 VCE(sat) v IC 1.2 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* 300 0 20 IC - Collector Current (Amps) +100°C +25°C -55°C 1.4 10 - (Volts) mV mV mV 1 - Typical Gain -50 -165 -275 0.1 V Base-Emitter Turn-On Voltage -30 -120 -168 h VBE(sat) VEB=-6V 0.01 IC - Collector Current (Amps) h VCE(sat) nA 1.0 0.8 1.6 - Normalised Gain -10 IEBO 1.2 0.6 0.001 IC /IB =10 1.4 0.8 0 Base-Emitter Saturation Voltage Transition Frequency 1.2 IE=-100µ A - (Volts) Collector-Emitter Saturation Voltage 1.4 IC=-10mA* V(BR)EBO 1.6 - (Volts) IC=-1µ A, RB ≤ 1kΩ - (Volts) V -55°C +25°C +175°C Tamb=25°C IC /IB=10 V -200 -300 V V(BR)CEO -220 Emitter-Base Breakdown Voltage Emitter Cut-Off Current IC /IB=50 1.6 V Collector-Emitter Breakdown Voltage TYPICAL CHARACTERISTICS MAX. UNIT CONDITIONS. 3 - 288 1000 20 FZT956 FZT956 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -220 -300 Collector-Emitter Breakdown Voltage V(BR)CER V IC=-100µ A -240 V -6 -8 V Collector Cut-Off Current ICBO -50 -1 nA µA VCB=-200V VCB=-200V,Tamb=100°C Collector Cut-Off Current ICER R ≤ 1kΩ -50 -1 nA µA VCB=-200V VCB=-200V,Tamb=100°C 1.0 0.6 0.4 0.4 0.2 0.2 VBE(on) Static Forward Current Transfer Ratio hFE IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* -970 -1110 mV IC=-2A, IB=-400mA -810 100 100 50 200 200 150 10 -950 mV IC=-2A, VCE=-5V* fT 110 MHz Output Capacitance Cobo 32 pF VCB=-20V, f=1MHz Switching Times ton toff 67 1140 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device VCE=1V 300 1 200 0.8 0.6 10 IC /IB =10 1.2 1.0 0.8 0.6 100 0.4 0.2 0.4 0.2 0.001 0.01 0.1 10 1 20 0 1.4 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 Single Pulse Test Tamb=25C 10 -55°C +25°C +100°C +175°C 1.6 VCE=1V 1 1.2 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.1 0.6 0.4 0.2 0 20 1.4 0.01 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) 1 10 100 VCE - Collector Voltage (V) Safe Operating Area VBE(on) v IC 3 - 287 0.1 -55°C +25°C +100°C +175°C 1.6 0.001 IC=-100mA, VCE=-10V f=50MHz 0.01 VCE(sat) v IC 1.0 0 0.001 VCE(sat) v IC 1.2 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* 300 0 20 IC - Collector Current (Amps) +100°C +25°C -55°C 1.4 10 - (Volts) mV mV mV 1 - Typical Gain -50 -165 -275 0.1 V Base-Emitter Turn-On Voltage -30 -120 -168 h VBE(sat) VEB=-6V 0.01 IC - Collector Current (Amps) h VCE(sat) nA 1.0 0.8 1.6 - Normalised Gain -10 IEBO 1.2 0.6 0.001 IC /IB =10 1.4 0.8 0 Base-Emitter Saturation Voltage Transition Frequency 1.2 IE=-100µ A - (Volts) Collector-Emitter Saturation Voltage 1.4 IC=-10mA* V(BR)EBO 1.6 - (Volts) IC=-1µ A, RB ≤ 1kΩ - (Volts) V -55°C +25°C +175°C Tamb=25°C IC /IB=10 V -200 -300 V V(BR)CEO -220 Emitter-Base Breakdown Voltage Emitter Cut-Off Current IC /IB=50 1.6 V Collector-Emitter Breakdown Voltage TYPICAL CHARACTERISTICS MAX. UNIT CONDITIONS. 3 - 288 1000 20