ON MSD42WT1G Npn high voltage transistor Datasheet

MSD42WT1G,
NSVMSD42WT1G
NPN High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
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Features
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NSV Prefix for Automotive and Other Applications Requiring
COLLECTOR
3
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (TA = 25°C)
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
300
V
Collector-Emitter Voltage
V(BR)CEO
300
V
Emitter-Base Voltage
V(BR)EBO
6.0
V
IC
150
mA
Rating
Collector Current − Continuous
1
BASE
3
1
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
PD
450
mW
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
274
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+ 150
°C
Power Dissipation (Note 1)
MARKING DIAGRAM
1D MG
G
1
ELECTRICAL CHARACTERISTICS
SC−70
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO
300
−
V
Collector-Base Breakdown Voltage
(IC = 100 mA, IE = 0)
V(BR)CBO
300
−
V
Emitter-Base Breakdown Voltage
(IE = 100 mA, IE = 0)
V(BR)EBO
6.0
−
V
Collector-Base Cutoff Current
(VCB = 200 V, IE = 0)
ICBO
−
0.1
mA
Emitter−Base Cutoff Current
(VEB = 6.0 V, IB = 0)
IEBO
−
0.1
mA
hFE1
hFE2
25
40
−
−
VCE(sat)
−
0.5
Collector-Emitter Saturation Voltage
(Note 2) (IC = 20 mA, IB = 2.0 mA)
2
SC−70 (SOT−323)
CASE 419
STYLE 3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DC Current Gain (Note 2)
(VCE = 10 V, IC = 1.0 mA)
(VCE = 10 V, IC = 30 mA)
2
EMITTER
−
V
1D
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MSD42WT1G
SC−70
3000 / Tape & Reel
(Pb−Free)
NSVMSD42WT1G
SC−70
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR-4 @ 10 mm2, 1 oz. Copper traces.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 11
1
Publication Order Number:
MSD42WT1/D
MSD42WT1G, NSVMSD42WT1G
TYPICAL CHARACTERISTICS
1.2
1000
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 10 V
TJ = 150°C
25°C
100
−55°C
10
0.1
1
10
100
−55°C
1
10
100
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
−55°C
25°C
150°C
0.3
0.2
0.1
IC/IB = 10
0
0.1
1
10
100
1.0
0.9
0.8 −55°C
0.7
0.6
25°C
0.5
0.4
150°C
0.3
0.2
0.1
VCE = 10 V
0
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base−Emitter On Voltage vs.
Collector Current
0
−0.4
100
VCE = 10 V
−0.8
−1.2
−1.6
−2.0
qVB, for VBE
10
Cobo
1
−55°C to 150°C
−2.4
−2.8
0.1
TJ = 25°C
f = 1 MHz
Cibo
C, CAPACITANCE (pF)
qVB, TEMPERATURE COEFFICIENT (mV/°C)
0.2
Figure 1. DC Current Gain
0.5
0.4
25°C
0.4
IC, COLLECTOR CURRENT (mA)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.6
0.6
IC, COLLECTOR CURRENT (mA)
0.9
0.7
150°C
0.8
0.0
0.1
1.0
0.8
IC/IB = 10
1.0
1
10
100
0.1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Base−Emitter Temperature
Coefficient
Figure 6. Capacitance
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2
1000
MSD42WT1G, NSVMSD42WT1G
TYPICAL CHARACTERISTICS
1000
VCE = 20 V
TJ = 25°C
10
1
10
IC, COLLECTOR CURRENT (mA)
fTau, CURRENT−GAIN BANDWIDTH (MHz)
100
1 ms
100
10
1
0.1 Single Pulse Test at TA = 25°C
0.1
10
1
100
100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Current−Gain — Bandwidth Product
Figure 8. Safe Operating Area
1000
ts
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
t, TIME (ns)
100
10
1000
10000
tr
t, TIME (ns)
1 s 100 ms 10 ms
td @ VBE(off) = 2 V
1
10
100
100
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
tf
1000
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−On Time
Figure 10. Turn−Off Time
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3
100
MSD42WT1G, NSVMSD42WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
SCALE 10:1
0.7
0.028
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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MSD42WT1/D
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