PHILIPS BC161-16 Pnp medium power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D110
BC160; BC161
PNP medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• General purpose applications.
DESCRIPTION
1
handbook, halfpage
3
2
PNP medium power transistor in a TO-39 metal package.
NPN complements: BC140 and BC141.
2
3
1
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
UNIT
−
−40
V
−
−
−60
V
BC160
−
−
−40
V
BC161
−
−
−60
V
−
−
−1.5
A
−
−
3.7
W
BC160-10; BC161-10
63
100
160
BC160-16; BC161-16
100
160
250
50
−
−
collector-emitter voltage
open base
ICM
peak collector current
Ptot
total power dissipation
Tcase ≤ 45 °C
hFE
DC current gain
IC = −100 mA; VCE = −1 V
transition frequency
1997 May 12
MAX.
−
BC161
fT
TYP.
open emitter
BC160
VCES
MIN.
IC = −50 mA; VCE = −10 V; f = 100 MHz
2
MHz
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC160
−
−40
V
BC161
−
−60
V
BC160
−
−40
V
BC161
−
−60
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−1.5
A
IBM
peak base current
−
−200
mA
open collector
Ptot
total power dissipation
−
3.7
W
Tstg
storage temperature
Tcase ≤ 45 °C
−65
+150
°C
Tj
junction temperature
−
175
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 May 12
CONDITIONS
in free air
3
VALUE
UNIT
200
K/W
35
K/W
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −40 V
MAX.
UNIT
nA
−10
−100
IE = 0; VCB = −40 V; Tj = 150 °C
−
−10
−100
µA
IC = 0; VEB = −5 V
−
−
−100
nA
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
IC = −100 µA; VCE = −1 V
hFE
TYP.
−
ICBO
hFE
MIN.
BC160-10; BC161-10
−
80
−
BC160-16; BC161-16
−
120
−
BC160-10; BC161-10
63
100
160
BC160-16; BC161-16
100
160
250
DC current gain
DC current gain
IC = −100 mA; VCE = −1 V
IC = −1 A; VCE = −1 V
BC160-10; BC161-10
−
20
−
BC160-16; BC161-16
−
30
−
VCEsat
collector-emitter saturation voltage
IC = −1 A; IB = −100 mA
−
−0.6
−1
V
VBE
base-emitter voltage
IC = −1 A; VCE = −1 V
−
−1
−1.7
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
30
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
−
−
180
pF
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
50
−
−
MHz
−
−
500
ns
−
−
650
ns
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
1997 May 12
ICon = −100 mA; IBon = −5 mA;
IBoff = 5 mA
4
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 May 12
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
5
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 12
6
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
NOTES
1997 May 12
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 12
Document order number:
9397 750 02281
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