DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose applications. DESCRIPTION 1 handbook, halfpage 3 2 PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and BC141. 2 3 1 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS UNIT − −40 V − − −60 V BC160 − − −40 V BC161 − − −60 V − − −1.5 A − − 3.7 W BC160-10; BC161-10 63 100 160 BC160-16; BC161-16 100 160 250 50 − − collector-emitter voltage open base ICM peak collector current Ptot total power dissipation Tcase ≤ 45 °C hFE DC current gain IC = −100 mA; VCE = −1 V transition frequency 1997 May 12 MAX. − BC161 fT TYP. open emitter BC160 VCES MIN. IC = −50 mA; VCE = −10 V; f = 100 MHz 2 MHz Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC160 − −40 V BC161 − −60 V BC160 − −40 V BC161 − −60 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −1 A ICM peak collector current − −1.5 A IBM peak base current − −200 mA open collector Ptot total power dissipation − 3.7 W Tstg storage temperature Tcase ≤ 45 °C −65 +150 °C Tj junction temperature − 175 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 May 12 CONDITIONS in free air 3 VALUE UNIT 200 K/W 35 K/W Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = −40 V MAX. UNIT nA −10 −100 IE = 0; VCB = −40 V; Tj = 150 °C − −10 −100 µA IC = 0; VEB = −5 V − − −100 nA collector cut-off current IEBO emitter cut-off current hFE DC current gain IC = −100 µA; VCE = −1 V hFE TYP. − ICBO hFE MIN. BC160-10; BC161-10 − 80 − BC160-16; BC161-16 − 120 − BC160-10; BC161-10 63 100 160 BC160-16; BC161-16 100 160 250 DC current gain DC current gain IC = −100 mA; VCE = −1 V IC = −1 A; VCE = −1 V BC160-10; BC161-10 − 20 − BC160-16; BC161-16 − 30 − VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA − −0.6 −1 V VBE base-emitter voltage IC = −1 A; VCE = −1 V − −1 −1.7 V Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 30 pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − − 180 pF fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 50 − − MHz − − 500 ns − − 650 ns Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time 1997 May 12 ICon = −100 mA; IBon = −5 mA; IBoff = 5 mA 4 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 May 12 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 5 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 12 6 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 NOTES 1997 May 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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