IDT54/74FCT827A IDT54/74FCT827B IDT54/74FCT827C HIGH-PERFORMANCE CMOS BUFFERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Faster than AMD’s Am29827 series • Equivalent to AMD’s Am29827 bipolar buffers in pinout/ function, speed and output drive over full temperature and voltage supply extremes • IDT54/74FCT827A equivalent to FAST • IDT54/74FCT827B 35% faster than FAST • IDT54/74FCT827C 45% faster than FAST • IOL = 48mA (commercial), and 32mA (military) • Clamp diodes on all inputs for ringing suppression • CMOS power levels (1mW typ. static) • TTL input and output level compatible • CMOS output level compatible • Substantially lower input current levels than AMD’s bipolar Am29800 series (5µA max.) • Product available in Radiation Tolerant and Radiation Enhanced versions • Military product compliant to MIL-STD-883, Class B The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. The IDT54/74FCT827A/B/C 10-bit bus drivers provide high-performance bus interface buffering for wide data/ address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maximum control flexibility. All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in high-impedance state. FUNCTIONAL BLOCK DIAGRAM Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 OE1 OE2 2609 drw 01 PRODUCT SELECTOR GUIDE 10-Bit Buffer Non-inverting IDT54/74FCT827A/B/C 2609 tbl 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. FAST is a trademark of National Semiconductor Co. MILITARY AND COMMERCIAL TEMPERATURE RANGES 1992 Integrated Device Technology, Inc. 7.20 MAY 1992 DSC-4612/2 1 IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES PIN CONFIGURATIONS 24 23 22 21 20 19 18 17 16 15 14 13 INDEX D2 D3 D4 NC D5 D6 D7 1 28 27 26 5 25 6 24 7 23 8 22 L28-1 9 21 10 20 11 19 1213 14 15 16 17 18 2609 drw 02 OEI I DI I Description When both are LOW, the outputs are enabled. When either one or both are HIGH, the outputs are High Z. 10-bit data input. YI O 10-bit data output. ABSOLUTE MAXIMUM RATINGS(1) Symbol Rating Commercial VTERM(2) Terminal Voltage –0.5 to +7.0 with Respect to GND VTERM(3) Terminal Voltage –0.5 to VCC with Respect to GND TA Operating 0 to +70 Temperature TBIAS Temperature –55 to +125 Under Bias TSTG Storage –55 to +125 Temperature PT Power Dissipation 0.5 DC Output Current OE1 OE2 2609 drw 04 2609 drw 03 Inputs 2609 tbl 02 IOUT Y0-9 FUNCTION TABLE(1) PIN DESCRIPTION I/O Y2 Y3 Y4 NC Y5 Y6 Y7 10 LCC TOP VIEW DIP/CERPACK/SOIC TOP VIEW Name 10 D0-9 4 3 2 D8 D9 GND NC OE2 Y9 Y8 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 OE2 D1 D0 OE1 NC VCC Y0 Y1 1 2 3 4 P24-1 5 D24-1 6 E24-1 & 7 8 SO24-2 9 10 11 12 OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND LOGIC SYMBOL 120 Output OE1 OE2 DI YI Function L L H X L L X H L H X X L H Z Z Transparent Three-State NOTE: 1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance 2609 tbl 03 CAPACITANCE (TA = +25°C, f = 1.0MHz) Military –0.5 to +7.0 Unit V –0.5 to VCC V –55 to +125 °C –65 to +135 °C –65 to +150 °C 0.5 W 120 mA Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V Typ. 6 Max. 10 Unit pF VOUT = 0V 8 12 pF NOTE: 2609 tbl 05 1. This parameter is measured at characterization but not tested. NOTES: 2609 tbl 04 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals only. 3. Outputs and I/O terminals only. 7.20 2 IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10% Parameter Input HIGH Level Test Conditions(1) Guaranteed Logic HIGH Level VIL Input LOW Level II H Input HIGH Current Symbol VIH II L IOZH Min. 2.0 Typ.(2) — Max. — Unit V Guaranteed Logic LOW Level — — 0.8 V VCC = Max. — — 5 µA VI = VCC Input LOW Current Off State (High Impedance) VCC = Max. Output Current IOZL VI = 2.7V — — 5(4) VI = 0.5V — — –5(4) VI = GND — — –5 VO = VCC — — 10 VO = 2.7V — — 10(4) VO = 0.5V — — –10(4) VO = GND VIK Clamp Diode Voltage VCC = Min., IN = –18mA Max.(3) , µA — — –10 — –0.7 –1.2 V IOS Short Circuit Current VCC = VO = GND –75 –120 — mA VOH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = –32µA VHC VCC — V VOL Output LOW Voltage VCC = Min. IOH = –300µA VHC VCC — VIN = VIH or VIL IOH = –15mA MIL. 2.4 4.3 — IOH = –24mA COM'L. 2.4 4.3 — VCC = 3V, VIN = VLC or VHC, IOL = 300µA — GND VLC VCC = Min. IOL = 300µA — GND VLC(4) VIN = VIH or VIL IOL = 32mA MIL. — 0.3 0.5 IOL = 48mA COM'L. — 0.3 0.5 NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient and maximum loading. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second. 4. This parameter is guaranteed but not tested. 7.20 V 2609 tbl 06 3 IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC – 0.2V Symbol ICC Parameter Quiescent Power Supply Current ICCD Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current (4) IC Total Power Supply Current (6) ∆ICC Test Conditions(1) VCC = Max. VIN ≥ VHC; V IN ≤ V LC VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle OE1 = OE2 = GND One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle OE1 = OE2 = GND Eight Bits Toggling Min. Typ.(2) Max. Unit — 0.2 1.5 mA — 0.5 2.0 mA VIN ≥ VHC VIN ≤ VLC — 0.15 0.25 mA/ MHz VIN ≥ VHC VIN ≤ VLC (FCT) VIN = 3.4V VIN = GND — 1.7 4.0 mA — 2.0 5.0 — 3.2 6.5 (5) — 5.2 14.5 (5) VIN ≥ VHC VIN ≤ VLC (FCT) VIN = 3.4V VIN = GND NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Per TTL driven input (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz. 7.20 2609 tbl 07 4 IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES SWITCHING CHARACTERISTICS OVER OPERATING RANGE Parameter tPLH tPHL tPZH tPZL tPHZ tPLZ Description Propagation Delay DI to YI Conditions (1) CL = 50pF RL = 500Ω CL = 300pF(3) Output Enable Time OEI to YI RL = 500Ω CL = 50pF RL = 500Ω CL = 300pF(3) Output Disable Time OEI to YI RL = 500Ω CL = 5pF(3) RL = 500Ω CL = 50pF RL = 500Ω IDT54/74FCT827A IDT54/74FCT827B IDT54/74FCT827C Com'l. Com'l. Com'l. (2) Min. Mil. (2) (2) Mil. (2) (2) Max. Min. Max. Min. Max. Min. Max. Min. 8.0 9.0 5.0 6.5 1.5 1.5 1.5 1.5 1.5 Mil. Max. Min. 4.4 (2) 1.5 Max. Unit 5.0 ns 1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0 1.5 10.0 1.5 11.0 1.5 12.0 1.5 13.0 1.5 1.5 1.5 1.5 1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0 1.5 14.0 1.5 15.0 1.5 1.5 9.0 1.5 6.0 1.5 7.0 1.5 5.7 1.5 6.7 1.5 10.0 1.5 7.0 1.5 8.0 1.5 6.0 1.5 7.0 9.0 1.5 10.0 NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These parameters are guaranteed but not tested. 8.0 9.0 7.0 8.0 ns ns 2609 tbl 08 7.20 5 IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES TEST CIRCUITS AND WAVEFORMS SWITCH POSITION TEST CIRCUITS FOR ALL OUTPUTS VCC 7.0V 500Ω V OUT VIN Pulse Generator D.U.T. 50pF RT 500Ω SET-UP, HOLD AND RELEASE TIMES Closed All Other Tests Open 3V 1.5V 0V tH TIMING INPUT 3V 1.5V 0V LOW-HIGH-LOW PULSE 3V 1.5V 0V HIGH-LOW-HIGH PULSE 1.5V tW t REM PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC. Open Drain Disable Low Enable Low PULSE WIDTH DATA INPUT ASYNCHRONOUS CONTROL Switch DEFINITIONS: 2609 tbl 09 CL = Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. CL t SU Test t SU 1.5V 3V 1.5V 0V tH PROPAGATION DELAY ENABLE AND DISABLE TIMES ENABLE DISABLE 3V 3V 1.5V SAME PHASE INPUT TRANSITION t PLH t PHL CONTROL INPUT t PZL 0V OUTPUT NORMALLY SWITCH LOW CLOSED t PZH VOH 1.5V OUTPUT VOL t PLH t PHL OUTPUT SWITCH NORMALLY OPEN HIGH 3V OPPOSITE PHASE INPUT TRANSITION 1.5V 1.5V 0V t PLZ 3.5V 3.5V 1.5V 0.3V V OL t PHZ 0.3V 1.5V 0V V OH 0V 0V NOTES 2609 drw 11 1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH. 2. Pulse Generator for All Pulses: Rate ≤ 1.0 MHz; ZO ≤ 50Ω; tF ≤ 2.5ns; tR ≤ 2.5ns. 7.20 6 IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION IDTXXFCT XX Device Type X Package X Process Blank B Commercial MIL-STD-883, Class B P D E L SO Plastic DIP CERDIP CERPACK Leadless Chip Carrier Small Outline IC 827A 827B 827C Non-Inverting 10-Bit Buffer Fast Non-Inverting 10-Bit Buffer Super Fast Non-Inverting 10-Bit Buffer 54 74 –55°C to +125°C 0°C to +70°C 2609 cnv* 10 7.20 7