FDS4141_F085 ® P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0mΩ Features Applications Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A Control switch in synchronous & non-synchronous buck Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A Load switch Typ Qg(TOT) = 35nC at VGS = -10V Inverter High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D D G SO-8 S S Pin 1 ©2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A S 1 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET May 2009 Symbol VDSS Drain to Source Voltage VGS ID Parameter Gate to Source Voltage Drain Current Continuous (VGS = 10V) Ratings -40 Units V ±20 V -10.8 A Pulsed -36 EAS Single Pulse Avalanche Energy 229 PD Power Dissipation 1.6 W -55 to +150 oC TJ, TSTG Operating and Storage Temperature mJ Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 30 o 81 oC/W C/W Package Marking and Ordering Information Device Marking FDS4141 Device FDS4141_F085 Package SO-8 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 - - V IDSS Zero Gate Voltage Drain Current VDS = -32V, - - -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, - - ±100 nA V On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA -1.0 -1.7 -3.0 ID = -10.5A, VGS = -10V - 10.5 13.0 ID = -8.4A, VGS = -4.5V - 14.8 19.0 ID = -10.5A, VGS = -10V, TJ = 125oC - 15.3 19.0 ID = -10.5A, VDD = -5V 34 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(TOT) Total Gate Charge at -10V VGS = 0 to -10V Qg(-5) Total Gate Charge at -5V VGS = 0 to -5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDS4141_F085 Rev. A VDS = -20V, VGS = 0V, f = 1MHz 2 VDD = -20V ID = -10.5A - 2005 - pF - 355 - pF - 190 - pF - 5.0 - Ω - 35 45 nC - 18.6 24.2 nC - 5.2 - nC - 6.6 - nC www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 25 ns td(on) Turn-On Delay Time - 9.7 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff VDD = -20V, ID = -10.5A VGS = -10V, RGEN = 6Ω - 4.4 - ns - 41 - ns Fall Time - 11.6 - ns Turn-Off Time - - 84 ns ISD = -10.5A - -0.8 -1.3 ISD = -2.1A - -0.7 -1.2 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = -10.5A, dSD/dt = 100A/µs V - 26 34 ns - 13.4 17.4 nC Notes: 1: Starting TJ = 25oC, L = 6.2mH, IAS = -8.6A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDS4141_F085 Rev. A 3 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted 1.0 -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 9 1.2 0.8 0.6 0.4 0.2 VGS = -10V 6 VGS = -4.5V 3 o RθJA = 81 C/W 0 0.0 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 25 150 150 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 50 75 100 125 TA, CASE TEMPERATURE (oC) DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 81 C/W 0.001 -3 10 -2 10 -1 2 10 1 10 t, RECTANGULAR PULSE DURATION (s) 3 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 -IDM, PEAK CURRENT (A) VGS = -10V TA = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 - TA I = I25 125 10 SINGLE PULSE o RθJA = 81 C/W 1 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 Figure 4. Peak Current Capability FDS4141_F085 Rev. A 4 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 60 -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 100 10 1ms 1 10 10ms 100ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.01 SINGLE PULSE TJ = MAX RATED o TA = 25 C If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1s DC STARTING TJ = 25oC STARTING TJ = 150oC 1 0.01 0.1 1 10 100 300 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area 36 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 36 VDD = -5V 27 18 TJ = 150oC 9 TJ = 25oC TJ = -55oC 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 40 30 TJ = 150oC 20 TJ = 25oC 0 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDS4141_F085 Rev. A VGS = -4V VGS = -3.5V 18 VGS = -3V 9 1 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 Figure 8. Saturation Characteristics ID = -10.5A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) VGS = -4.5V 0 50 2 VGS = -10V 27 0 4 Figure 7. Transfer Characteristics 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -75 ID = -10.5A VGS = -10V -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 VGS = VDS ID = -250µA 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1000 Coss Crss 60 Figure 13. Capacitance vs Drain to Source Voltage FDS4141_F085 Rev. A 0.95 0.90 -80 -VGS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pF) Ciss 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 -40 0 40 80 120 160 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4000 100 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature f = 1MHz VGS = 0V ID = -1mA 10 ID = -10.5A 8 VDD = -20V 6 VDD = -15V VDD = -25V 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 35 40 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDS4141_F085 Rev. A 7 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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