SemiHow HCD7NE70S 700v n-channel super junction mosfet Datasheet

BVDSS = 700 V
RDS(on) typ = 0.95 ȍ
HCD7NE70S
ID = 6.0 A
700V N-Channel Super Junction MOSFET
D-PAK
FEATURES
2
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 9 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.95 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
700
V
Drain Current
– Continuous (TC = 25୅)
6.0
A
Drain Current
– Continuous (TC = 100୅)
3.8
A
IDM
Drain Current
– Pulsed
15.6
A
VGS
Gate-Source Voltage
Static
ρ20
V
AC (f>1 Hz)
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
40
mJ
IAR
Avalanche Current
(Note 1)
1.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.1
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
50
V/ns
Power Dissipation (TA = 25୅)*
2.1
W
Power Dissipation (TC = 25୅)
28
W
-55 to +150
୅
300
୅
ID
PD
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
4.4
RșJA
Junction-to-Ambient*
--
60.5
Tsold
Soldering temperature, wave soldering
only allowed at leads
--
260
Units
୅/W
୅
* When mounted on the minimum pad size recommended (PCB Mount)
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HCD7NE70S
Dec 2013
Device Marking
Week Marking
Package
Packing
Quantity
HCD7NE70S
YWWX
HCD7NE70S
YWWXg
TO-251
Tube / Reel
80 / 2,500
Pb Free
TO-251
Tube / Reel
80 / 2,500
Halogen Free
Electrical Characteristics TJ=25 qC
Symbol
Parameter
RoHS Status
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.3 A
--
0.95
1.1
Ÿ
VGS = 0 V, ID = 250 Ꮃ
700
--
--
V
VDS = 700 V, VGS = 0 V
--
--
1
Ꮃ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VDS = 560 V, TJ = 125୅
--
--
10
Ꮃ
VGS = ρ20 V, VDS = 0 V
--
--
ρ100
Ꮂ
VDS = 100 V, VGS = 0 V,
f = 1.0 MHz
--
340
440
Ꮔ
--
20
26
Ꮔ
--
5.0
6.5
Ꮔ
--
20
50
Ꭸ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Vplateau
VDS = 350 V, ID = 2.3 A,
RG = 10 Ÿ
(Note 4,5)
VDS = 560 V, ID = 2.3 A
VGS = 10 V
(Note 4,5)
Gate-Plateau Voltage
--
25
60
Ꭸ
--
60
130
Ꭸ
--
30
70
Ꭸ
--
9.0
12
nC
--
2.0
--
nC
--
3.0
--
nC
--
5.0
--
V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
6.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
15.2
VSD
Source-Drain Diode Forward Voltage
--
--
1.2
V
--
150
--
Ꭸ
--
1.1
--
ȝ&
--
12
--
A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
IS = 2.3 A, VGS = 0 V
IS = 2.3 A, VGS = 0 V
diF/dt = 100 A/ȝV
(Note 4)
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=15mH, IAS=2.3A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HCD7NE70S
Package Marking and Odering Information
HCD7NE70S
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
25oC
150oC
-25oC
* Notes :
1. VDS= 20V
2. 300us Pulse Test
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1
0.1
2
VDS, Drain-Source Voltage [V]
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
4
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
10
3
VGS = 10V
2
1
VGS = 20V
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0
0
3
6
9
0.1
0.0
12
0.2
0.4
Capacitances [pF]
1800
Coss
600
1.0
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Ciss
VDS = 140V
10
VDS = 350V
VDS = 560V
8
6
4
2
Crss
10-1
100
1.2
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1200
0.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
0.6
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Note : ID = 2.3A
101
102
0
0
2
4
6
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
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(continued)
1.2
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HCD7NE70S
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
* Note :
1. VGS = 10 V
2. ID = 2.3 A
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
o
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
6
Operation in This Area
is Limited by R DS(on)
5
100 Ps
1 ms
10 ms
100 ms
0
10
DC
* Notes :
1. TC = 25 oC
4
3
2
1
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
ZTJC(t), Thermal Response
ID, Drain Current [A]
ID, Drain Current [A]
10 Ps
101
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
* Notes :
1. ZTJC(t) = 4.4 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
0.05
0.02
10-1
PDM
0.01
t1
single pulse
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
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HCD7NE70S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HCD7NE70S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HCD7NE70S
Package Dimension
{vTY\YG
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