MMBTH10RG MMBTH10RG NPN RF Transistor C • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. • Sourced from process 42. E B SOT-23 Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 40 Units V VCBO VEBO Collector-Base Voltage 40 V Emitter-Base Voltage 4.0 IC Collector Current V 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C - Continuous * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 1.0 mA, IB = 0 40 V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 µA, IC = 0 4.0 V ICBO Collector Cutoff Current VCB = 30 V, IE = 0 100 nA On Characteristics hFE DC Current Gain IC = 1.0 mA, VCE = 6.0 V VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 5.0 mA 50 120 V 0.2 V Small Signal Characteristics fT Current Gain - Bandwidth Product IC = 2.0 mA, VCE = 10 V, f = 100 MHz 450 MHz Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.6 pF rb’Cc Collector Base Time Constant IC = 5.0 mA, VCB = 10 V, f = 79.8 MHz 12 pS * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 225 1.8 Units mW mW/°C RθJA Thermal Resistance, Junction to Ambient 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 MMBTH10RG Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FPS™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ EnSigna™ I2C™ i-Lo™ FACT™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I10