LINER LTC5530 Precision 300mhz to 7ghz rf detector with shutdown and gain adjustment Datasheet

LTC5530
Precision 300MHz to 7GHz
RF Detector with Shutdown
and Gain Adjustment
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DESCRIPTIO
FEATURES
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Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Frequency Range: 300MHz to 7GHz*
Wide Input Power Range: –32dBm to 10dBm
Buffered Detector Output with External Gain Control
Low Starting Voltage: 120mV ±35mV for Gain = 2X
Wide VCC Range of 2.7V to 6V
Low Operating Current: 500µA
Low Shutdown Current: <2µA
Available in a Low Profile (1mm) SOT-23 Package
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APPLICATIO S
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802.11a, 802.11b, 802.11g, 802.15, 802.16
Multimode Mobile Phone Products
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin. The output buffer gain is set via
external resistors. A power saving shutdown mode reduces current to less than 2µA.
The LTC5530 operates with input power levels from
–32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
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The LTC®5530 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
33pF
RF
INPUT
1
LTC5530
VCC 6
RFIN
VCC
100pF
2
DISABLE ENABLE
3
GND
VOUT
5
RA
SHDN
VM
5530 TA01
4
RB
0.1µF
VOUT OUTPUT VOLTAGE (mV)
300MHz to 7GHz RF Power Detector
VCC = 3.6V
3200 TA = 25°C
GAIN = 2
2800
2400
2000
1600
300MHz
1000MHz
2000MHz
3000MHz
4000MHz
5000MHz
6000MHz
7000MHz
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
5530 TA02
5530f
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LTC5530
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
VCC, VOUT, SHDN, VM ...................................... –0.3V to 6.5V
RFIN Voltage ......................................(VCC ± 1.5V) to 7V
RFIN Power (RMS) .............................................. 12dBm
IVOUT ...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
TOP VIEW
LTC5530ES6
RFIN 1
6 VCC
GND 2
5 VOUT
SHDN 3
4 VM
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LBDX
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
RA = RB = 1k, SHDN = HI unless otherwise noted.
PARAMETER
CONDITIONS
MIN
VCC Operating Voltage
●
TYP
2.7
MAX
UNITS
6
0.5
V
IVCC Operating Current
IVOUT = 0mA
●
0.7
mA
IVCC Shutdown Current
SHDN = LO
●
VOUT (No RF Input)
RLOAD = 2k
SHDN = LO
●
85
VOUT Output Current
VOUT = 1.75V, VCC = 2.7V, ∆VOUT < 10mV
●
2
VOUT Enable Time
SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k
●
VOUT Bandwidth
CLOAD = 33pF, RLOAD = 2k (Note 4)
VOUT Load Capacitance
(Notes 6, 7)
VOUT Slew Rate
VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3)
3
V/µs
VOUT Noise
VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
1
mVP-P
0.01
2
µA
100 to 140
1
155
mV
mV
4
8
mA
µs
20
2
MHz
33
●
pF
VM Voltage Range
●
0
VCC – 1.8V
V
VM Input Current
●
–0.5
0.5
µA
0.35
V
36
µA
SHDN Voltage LO, Chip Disabled
VCC = 2.7V to 6V
●
SHDN Voltage HI, Chip Enabled
VCC = 2.7V to 6V
●
SHDN Input Current
SHDN = 3.6V
●
RFIN Input Frequency Range
(Note 8)
1.4
V
22
300 to 7000
MHz
–32 to 10
dBm
RFIN Input Power Range
RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V
RFIN AC Input Resistance
F = 1000MHz, Pin = –25dBm
220
Ω
RFIN Input Shunt Capacitance
F = 1000MHz, Pin = –25dBm
0.65
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at VOUT is measured between 1.3V and 2.3V.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
Note 7: Capacitive loading greater than this value may result in circuit
instability.
Note 8: Higher frequency operation is achievable with reduced
performance. Consult factory for more information.
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LTC5530
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TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage
(RF Input Signal Off)
130
VOUT vs RF Input Power and VCC
1000MHz
Supply Current vs Supply Voltage
(RF Input Signal Off)
500
GAIN = 2
5600
GAIN = 2
TA = 85°C
120
TA = 25°C
TA = –40°C
115
480
460
TA = 25°C
440
TA = 25°C
GAIN = 2
4800
VOUT OUTPUT VOLTAGE (mV)
125
SUPPLY CURRENT (µA)
VOUT OUTPUT VOLTAGE (mV)
TA = –40°C
TA = 85°C
4000
3200
2400
VCC = 6V
VCC = 5V
VCC = 4V
VCC = 3V
1600
800
3.0
3.5
4.0
4.5
5.0 5.5
SUPPLY VOLTAGE VCC (V)
420
2.5
6.0
0
3.0
3.5
4.0
4.5
5.0 5.5
SUPPLY VOLTAGE VCC (V)
Typical Detector Characteristics,
300MHz
VOUT OUTPUT VOLTAGE (mV)
VCC = 3.6V
3200 GAIN = 2
TA = 25°C
1600
1200
TA = 85°C
800
TA = –40°C
2800
2400
TA = 25°C
2000
1600
1200
TA = 85°C
800
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
4
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
1200
800
400
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
5530 G07
TA = 85°C
0
4
2400
Typical Detector Characteristics,
5000MHz
VCC = 3.6V
3200 GAIN = 2
TA = –40°C
2000
1600
8
3600
2800
TA = 25°C
1200
800
400
8
800
5530 G06
VCC = 3.6V
3200 GAIN = 2
1600
1200
0
–32 –28 –24 –20 –16 –12 –8 –4
8
3600
VCC = 3.6V
3200 GAIN = 2
TA = 25°C
TA = 25°C
1600
Typical Detector Characteristics,
4000MHz
3600
2000
2000
5530 G05
Typical Detector Characteristics,
3000MHz
TA = –40°C
TA = –40°C
2400
RF INPUT POWER (dBm)
5530 G04
2400
2800
400
400
400
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
3600
VCC = 3.6V
3200 GAIN =2
2400
2800
Typical Detector Characteristics,
2000MHz
3600
VCC = 3.6V
3200 GAIN =2
2000
5530 G03
Typical Detector Characteristics,
1000MHz
3600
TA = –40°C
8 12
5530 G02
5530 G01
2800
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
6.0
VOUT OUTPUT VOLTAGE (mV)
110
2.5
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
2800
2400
TA = –40°C
2000
1600
TA = 25°C
1200
800
TA = 85°C
400
8
5530 G08
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
5530 G09
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LTC5530
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TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics,
6000MHz
Typical Detector Characteristics,
7000MHz
3600
3600
2800
VCC = 3.6V
3200 GAIN = 2
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
VCC = 3.6V
3200 GAIN = 2
TA = –40°C
2400
2000
TA = 25°C
1600
1200
800
TA = 85°C
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
2800
TA = –40°C
2400
2000
TA = 25°C
1600
1200
800
TA = 85°C
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
5530 G10
Typical Detector Characteristics,
1000MHz
3600
VCC = 3.6V
3200 GAIN = 4
TA = –40°C
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
3600
2800
2400
TA = 25°C
2000
1600
1200
8
5530 G11
Typical Detector Characteristics,
300MHz
VCC = 3.6V
3200 GAIN = 4
4
TA = 85°C
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
2800
2000
1600
4
5530 G12
TA = 25°C
1200
800
400
0
TA = –40°C
2400
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
5530 G13
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LTC5530
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TYPICAL PERFOR A CE CHARACTERISTICS
100
TA = –40°C
TA = 85°C
10
100
TA = –40°C
TA = 85°C
10
TA = 25°C
1
–30
–25
1000
VCC = 3.6V
GAIN = 2
VOUT SLOPE (mV/dB)
1000
VCC = 3.6V
GAIN = 2
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
1000
–20 –15 –10 –5
RF INPUT POWER (dBm)
1
–30
5
0
TA = 85°C
10
TA = 25°C
–25
–20 –15 –10 –5
RF INPUT POWER (dBm)
TA = 85°C
–25
–20 –15 –10 –5
RF INPUT POWER (dBm)
5530 G16
1000
100
TA = –40°C
TA = 85°C
10
VCC = 3.6V
GAIN = 2
100
TA = –40°C
10
TA = 85°C
TA = 25°C
–20 –15 –10 –5
RF INPUT POWER (dBm)
0
1
–30 –25
5
TA = 25°C
–20 –15 –10 –5
0
RF INPUT POWER (dBm)
VOUT Slope vs RF Input Power
7000MHz
1000
VOUT SLOPE (mV/dB)
VCC = 3.6V
GAIN = 2
100
TA = –40°C
TA = 85°C
TA = 25°C
–20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
5530 G19
5530 G18
VOUT Slope vs RF Input Power
6000MHz
1
–30 –25
1
–30 –25
5
–20 –15 –10 –5
0
RF INPUT POWER (dBm)
5530 G17
10
5
0
VOUT Slope vs RF Input Power
5000MHz
VCC = 3.6V
GAIN = 2
TA = 25°C
1000
1
–30
5
0
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
TA = –40°C
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
1000
100
–25
TA = –40°C
VOUT Slope vs RF Input Power
4000MHz
VCC = 3.6V
GAIN = 2
1
–30
100
5530 G15
VOUT Slope vs RF Input Power
3000MHz
10
VCC = 3.6V
GAIN = 2
TA = 25°C
5530 G14
1000
VOUT Slope vs RF Input Power
2000MHz
VOUT Slope vs RF Input Power
1000MHz
VOUT Slope vs RF Input Power
300MHz
VCC = 3.6V
GAIN = 2
100
10
TA = –40°C
TA = 85°C
TA = 25°C
5
5530 G20
1
–30 –25 –20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
5530 G21
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LTC5530
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.30
290.45
–136.22
0.50
234.41
–162.54
0.70
178.25
–170.53
0.90
137.31
–159.89
1.10
109.17
–147.57
1.30
86.30
–136.18
1.50
68.65
–121.74
1.70
57.48
–107.60
1.90
49.79
– 96.72
2.10
43.56
– 86.70
2.30
38.67
–77.91
2.50
34.82
–70.13
2.70
31.68
– 62.86
2.90
29.13
– 56.01
3.10
27.17
– 49.83
3.30
25.73
– 44.24
3.50
24.56
– 39.74
3.70
23.18
– 35.35
3.90
22.31
– 30.62
4.10
20.73
–26.88
4.30
19.88
–22.31
4.50
19.40
–18.23
4.70
19.05
–14.25
4.90
19.08
–10.21
5.10
19.55
– 6.30
5.30
20.85
– 2.84
5.50
21.94
–1.49
5.70
20.60
– 0.07
5.90
19.29
2.99
6.10
18.69
6.61
6.30
18.53
10.39
6.50
18.74
14.35
6.70
19.79
17.91
6.90
19.75
20.77
7.00
19.99
22.47
S11 Forward Reflection
Impedance
5530 TA03
0.3000GHz-7.000GHz
5508 TA03
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LTC5530
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.30
216.45
–76.47
0.50
190.63
–98.28
0.70
161.98
–112.03
0.90
133.17
–111.53
1.10
113.08
–109.05
1.30
94.55
–107.08
1.50
75.33
– 98.50
1.70
63.52
– 88.19
1.90
55.19
– 80.05
2.10
48.64
–72.23
2.30
43.73
– 64.81
2.50
39.71
– 58.31
2.70
36.47
– 52.27
2.90
33.69
– 46.77
3.10
31.61
– 41.25
3.30
29.78
–36.61
3.50
28.27
–32.39
3.70
26.63
–28.12
3.90
26.12
–23.97
4.10
24.20
–20.75
4.30
23.28
–16.69
4.50
22.60
–12.77
4.70
22.21
– 9.08
4.90
22.15
–5.24
5.10
22.61
–1.58
5.30
23.90
1.53
5.50
24.97
2.62
5.70
23.51
4.00
5.90
22.25
6.94
6.10
21.57
10.62
6.30
21.43
14.02
6.50
21.69
17.77
6.70
22.68
21.24
6.90
22.81
24.21
7.00
23.07
25.56
S11 Forward Reflection
Impedance
5530 TA04
0.3000GHz-7.000GHz
5508 TA04
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LTC5530
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PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
ensure that the part is in shutdown when no input is
applied. In shutdown VOUT is connected to ground via a
280Ω resistor.
VM (Pin 4): Negative Input to Buffer Amplifier.
VOUT (Pin 5): Detector Output.
GND (Pin 2): Ground.
SHDN (Pin 3): Shutdown Input. A logic low on the SHDN
pin places the part in shutdown mode. A logic high enables
the part. SHDN has an internal 160k pulldown resistor to
VCC (Pin 6): Power Supply Voltage, 2.7V to 6V. VCC should
be bypassed appropriately with ceramic capacitors.
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BLOCK DIAGRA
RFSOURCE
VCC
6
BIAS
SHUTDOWN
500Ω
RFIN
SD
1
+
500Ω
BUFFER
5
VOUT
4
VM
–
31k
+
25pF
50µA
GND 2
180Ω
RF DET
24k
–
SD
SD
50µA
100Ω
40k
160k
3
5530 BD
SHDN
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LTC5530
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APPLICATIO S I FOR ATIO
Operation
BANDWIDTH =
The LTC5530 RF detector integrates several functions to
provide RF power detection over frequencies ranging from
300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF
input signal to DC and a delay circuit to avoid voltage transients at VOUT when powering up. The LTC5530 has both
shutdown and gain setting capabilities.
4MHz
RB
= 4MHz •
(GAIN)
(RA + RB )
A capacitor can be placed across the feedback resistor RA
to shape the frequency response. In addition the amplifier
can be used as a comparator. VM can be connected to a
reference voltage. When the internal detector voltage
(which is connected to the positive input of the buffer
amplifier) exceeds the external voltage of VM, VOUT will
switch high.
Buffer Amplifier
RF Detector
The output buffer amplifier is capable of supplying typically 4mA into a load. The negative terminal VM is brought
out to a pin for gain selection. External resistors connected
between VOUT and VM (RA) and VM to ground (RB) will set
the amplifier gain.
GAIN = 1 +
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 55µA and drives a
25pF internal peak detector capacitor.
RA
RB
Shutdown
The amplifier is unity gain stable; however a minimum gain
of two is recommended to improve low output voltage
accuracy. The amplifier bandwidth is 2MHz for a gain of 2.
The part is in shutdown mode when SHDN is low. The
supply current is reduced to < 2µA and VOUT is shorted to
ground via a 280Ω resistor. When SHDN is asserted high,
the part is enabled after about 8µs.
For increased gain applications, the bandwidth is reduced
according to the formula:
Demo Board Schematic
VCC
2.7V TO 6V
RFIN
VCC
SHDN
C4
39pF
C1
0.1µF
LTC5530ES6
1
R1
(OPT)
2
R2
22k
3
RFIN
VCC
GND VOUT
SHDN VM
6
C2
100pF
5
4
R3
10k
VOUT
C3
(OPT)
R4
10k
5530 DB
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LTC5530
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APPLICATIO S I FOR ATIO
Applications
The LTC5530 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–32dBm to 10dBm for frequencies from 300MHz to 7GHz.
Operation at higher frequencies is achievable. Consult
factory for more information.
The LTC5530 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the RSSI output
can be split between two branches, providing AC-coupled
0.1µF
LTC5530ES6
1
2
3
DISABLE ENABLE
RFIN
VCC
GND VOUT
SHDN VM
data (or audio) output and DC-coupled RSSI output for
signal strength measurements and AGC.
The LTC5530 can be used for RF power detection and
control. Figure 1 is an example of transmitter power
control, using the LTC5530 with a capacitive tap to the
power amplifier. A 0.5pF capacitor (C1) followed by a
200Ω resistor (R1) forms a coupling circuit with about
20dB loss at 900MHz referenced to the LTC5530 RF input
pin. In the actual product implementation, component
values for the capacitive tap may be different depending on
parts placement, PCB parasitics and parameters of the
antenna.
Li-Ion
Tx PA
MODULE
R1
200Ω
1%
C1
0.5pF
±0.05pF
CELL BAND
6
DIPLEXER
5
4
PCS BAND
R2
R3
MOBILE
PHONE
DSP
VPC
BSE
5530 F01
Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap
5530f
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LTC5530
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PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62
MAX
2.90 BSC
(NOTE 4)
0.95
REF
1.22 REF
3.85 MAX 2.62 REF
1.4 MIN
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
0.09 – 0.20
(NOTE 3)
1.90 BSC
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5530f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LTC5530
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
Infrastructure
LT5511
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
DC-3GHz High Signal Level Downconverting Mixer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517
40MHz to 900MHz Direct Conversion Quadrature Demodulator
21dBm IIP3, Integrated LO Quadrature Generator
LT5519
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5522
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC®5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
100kHz to 1000MHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5531
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control and Shutdown
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Adjustable Gain and Offset
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
LT5506
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
LT5546
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1758
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1957
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC4400
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5530f
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Linear Technology Corporation
LT/TP 0304 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2004