PHILIPS BYV118-35 Rectifier diodes schottky barrier Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
BYV118, BYV118B series
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 35 V/ 40 V/ 45 V
a2
3
a1
1
IO(AV) = 10 A
VF ≤ 0.6 V
k 2
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118 series is supplied in the SOT78 conventional leaded package.
The BYV118B series is supplied in the SOT404 surface mounting package.
PINNING
PIN
SOT78 (TO220AB)
DESCRIPTION
1
anode 1 (a)
2
cathode (k) 1
3
anode 2 (a)
tab
cathode (k)
SOT404
tab
tab
2
1
1 23
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BYV118BYV118B-
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current (per diode)
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
35
35
35
40
40
40
45
45
45
V
-
35
40
45
V
Tmb ≤ 108 ˚C
-
35
40
45
V
square wave; δ = 0.5;
Tmb ≤ 127 ˚C
-
10
A
square wave; δ = 0.5;
Tmb ≤ 127 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
10
A
-
100
110
A
A
-
1
A
-
150
˚C
- 65
175
˚C
1. It is not possible to make connection to pin 2 of the SOT404 pckage.
May 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
MIN.
-
TYP. MAX. UNIT
60
50
4.5
3
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
VF
Forward voltage per diode
IR
Reverse current per diode
Cd
Junction capacitance per
diode
May 1998
CONDITIONS
MIN.
IF = 5 A; Tj = 125˚C
IF = 10 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
2
-
TYP. MAX. UNIT
0.52
0.72
0.06
6
155
0.6
0.87
0.5
15
-
V
V
mA
mA
pF
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
5
BYV118, BYV118B series
Tmb(max) / C
137.5
Forward dissipation, PF (W) PBYR1045CTD
Vo = 0.43 V
Rs = 0.034 Ohms
132
0.5
0.2
125 C
10
100 C
146.5
0.1
1
2
tp
I
D=
tp
T
2
3
4
5
6
Average forward current, IF(AV) (A)
Tj = 25 C
t
T
1
50 C
0.1
155.5
0
75 C
141
1
0
PBYR645CT
Reverse current, IR (mA)
D = 1.0
4
3
100
7
150
8
0.01
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
0
25
Reverse voltage, VR (V)
50
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Forward dissipation, PF (W) PBYR1045CTD Tmb(max) / C
137.5
Vo = 0.43 V
Rs = 0.034 Ohms
a = 1.57
4
132
1.9
2.2
2.8
3
146.5
4
Cd / pF
5
PBYR645CT
1000
100
2
141
1
155.5
0
0
1
10
150
5
2
3
4
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
20
10
VR / V
100
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
BYV118
Forward current, IF (A)
1
10
Transient thermal impedance, Zth j-mb (K/W)
Tj = 25 C
Tj = 125 C
15
1
typ
10
max
0.1
PD
5
tp
D=
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
May 1998
1us
10us
100us
tp
T
t
1ms
10ms 100ms
1s
pulse width, tp (s)
BYV118
10s
Fig.6. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.7. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.9. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
May 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1998
6
Rev 1.300
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