Renesas FS70UMJ-06F High-speed switching use nch power mos fet Datasheet

FS70UMJ-06F
High-Speed Switching Use
Nch Power MOS FET
REJ03G0250-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
VDSS : 60 V
rDS(ON) (max) : 7.0 mΩ
ID : 70 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 70 ns
Outline
TO-220
2, 4
4
1.
2.
3.
4.
1
1 2
3
Gate
Drain
Source
Drain
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Ratings
60
±20
70
280
70
70
280
125
– 55 to +150
– 55 to +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
VGS = 0 V
VDS = 0 V
L = 10 µH
Typical value
FS70UMJ-06F
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Min.
60
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
1.5
5.5
6.6
0.19
110
8500
1300
720
42
130
800
330
1.0
Max.
—
—
100
±10
2.0
7.0
8.3
0.25
—
—
—
—
—
—
—
—
1.5
Unit
V
V
µA
µA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
ID = 1 mA, VDS = 10 V
ID = 35 A, VGS = 10 V
ID = 35 A, VGS = 4 V
ID = 35 A, VGS = 10 V
ID = 35 A, VDS = 10 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
Thermal resistance
Reverse recovery time
Rth(ch-c)
trr
—
—
—
70
1.0
—
°C/W
ns
Channel to case
IS = 70 A, dis/dt = –100 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
VDD = 30 V, ID = 35 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 35 A, VGS = 0 V
FS70UMJ-06F
Performance Curves
Maximum Safe Operating Area
150
103
125
7
5
3
2
Drain Current ID (A)
Drain Power Dissipation PD (W)
Drain Power Dissipation Derating Curve
100
75
50
25
0
0
50
100
200
150
102
7
5
3
2
100µs
101
7
5
3 Tc = 25°C
2 Single Pulse
100
3 5 7 10 0 2 3
1ms
10ms
100ms
DC
5 7 101 2 3 5 7 102
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Output Characteristics (Typical)
100
50
80
VGS = 10V
5V
4V
60
PD = 125W
3.5V
40
2.5V
20
Drain Current ID (A)
3V
Drain Current ID (A)
tw = 10µs
40
VGS
= 10V
5V
3V
3.5V
4V
2.5V
30
20
10
Tc = 25°C
Pulse Test
0
0.4
0.8
1.2
1.6
0.4
0.6
0.8
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
Tc = 25°C
Pulse Test
0.8
ID = 100A
0.6
70A
0.4
30A
0.2
0
0.2
Drain-Source Voltage VDS (V)
1.0
0
0
0
2.0
2
4
6
8
Gate-Source Voltage VGS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
10
Drain-Source On-State Resistance rDS(ON) (mΩ)
Drain-Source On-State Voltage VDS(ON) (V)
0
Tc = 25°C
Pulse Test
1.0
10
Tc = 25°C
Pulse Test
8
VGS = 4V
6
10V
4
2
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Drain Current ID (A)
FS70UMJ-06F
Forward Transfer Admittance vs.
Drain Current (Typical)
Tc = 25°C
VDS = 10V
Pulse Test
160
120
80
40
0
0
2
4
6
2
Tc = 25°C
102
7
5
4
3
2
75°C
125°C
101
100
2 3 4 5 7 102
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
Tch = 25°C
f = 1MHz
VGS = 0V
104
7
5
Ciss
3
2
103
7
5
Coss
Crss
3
10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
103
7
5
4
3
td(off)
tf
2
tr
102
7
5
4
3
2
td(on)
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
101
100
2 3 4 5 7 101
2 3 4 5 7 102
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
100
10
VGS = 0V
Pulse Test
8
6
VDS = 10V
20V
4
40V
2
40
80
120
160
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
200
Source Current IS (A)
Tch = 25°C
ID = 70A
0
0
2 3 4 5 7 101
Drain Current ID (A)
2
Gate-Source Voltage VGS (V)
103
7 VDS = 10V
5 Pulse Test
4
3
Gate-Source Voltage VGS (V)
3
Capacitance (pF)
10
8
Switching Time (ns)
Drain Current ID (A)
200
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
80
Tc = 125°C
60
40
75°C
20
25°C
0
0
0.4
0.8
1.2
1.6
Source-Drain Voltage VSD (V)
2.0
On-State Resistance vs.
Channel Temperature (Typical)
101
7
5
4
3
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FS70UMJ-06F
VGS = 10V
ID = 35A
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
Transient Thermal Impedance Zth(ch-c) (°C/W)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
1.4
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
101
7
5
3
2
D = 1.0
100
7 0.5
5
3 0.2
2 0.1
0.05
10–1
0.02
7
5
0.01
3 Single Pulse
2
PDM
tw
T
D = tw
T
10–2
10–4 2 3 5 710–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RGEN
RL
Vin
Vout
RGS
10%
10%
10%
VDD
90%
td(on)
Rev.1.00, Aug.20.2004, page 5 of 6
tr
90%
td(off)
tf
FS70UMJ-06F
Package Dimensions
TO-220
EIAJ Package Code
JEDEC Code
Mass (g) (reference value)
Lead Material
Conforms
Conforms
2.0
Cu alloy
4.5
10.5
7.0
φ 3.6 ± 0.2
1.0
3.8 max
12.5 min
16 max
3.2 ± 0.2
1.3
0.8
2.5
0.5
2.5
2.6
4.5
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Static electricity prevention bag
100 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
FS70UMJ-06F
FS70UMJ-06F-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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