FS70UMJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0250-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : 60 V rDS(ON) (max) : 7.0 mΩ ID : 70 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 70 ns Outline TO-220 2, 4 4 1. 2. 3. 4. 1 1 2 3 Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.1.00, Aug.20.2004, page 1 of 6 Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 70 280 70 70 280 125 – 55 to +150 – 55 to +150 2.0 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value FS70UMJ-06F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Min. 60 ±20 — — 1.0 — — — — — — — — — — — — Typ. — — — — 1.5 5.5 6.6 0.19 110 8500 1300 720 42 130 800 330 1.0 Max. — — 100 ±10 2.0 7.0 8.3 0.25 — — — — — — — — 1.5 Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VGS = 4 V ID = 35 A, VGS = 10 V ID = 35 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz Thermal resistance Reverse recovery time Rth(ch-c) trr — — — 70 1.0 — °C/W ns Channel to case IS = 70 A, dis/dt = –100 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 VDD = 30 V, ID = 35 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 35 A, VGS = 0 V FS70UMJ-06F Performance Curves Maximum Safe Operating Area 150 103 125 7 5 3 2 Drain Current ID (A) Drain Power Dissipation PD (W) Drain Power Dissipation Derating Curve 100 75 50 25 0 0 50 100 200 150 102 7 5 3 2 100µs 101 7 5 3 Tc = 25°C 2 Single Pulse 100 3 5 7 10 0 2 3 1ms 10ms 100ms DC 5 7 101 2 3 5 7 102 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 100 50 80 VGS = 10V 5V 4V 60 PD = 125W 3.5V 40 2.5V 20 Drain Current ID (A) 3V Drain Current ID (A) tw = 10µs 40 VGS = 10V 5V 3V 3.5V 4V 2.5V 30 20 10 Tc = 25°C Pulse Test 0 0.4 0.8 1.2 1.6 0.4 0.6 0.8 Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) Tc = 25°C Pulse Test 0.8 ID = 100A 0.6 70A 0.4 30A 0.2 0 0.2 Drain-Source Voltage VDS (V) 1.0 0 0 0 2.0 2 4 6 8 Gate-Source Voltage VGS (V) Rev.1.00, Aug.20.2004, page 3 of 6 10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 Tc = 25°C Pulse Test 1.0 10 Tc = 25°C Pulse Test 8 VGS = 4V 6 10V 4 2 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain Current ID (A) FS70UMJ-06F Forward Transfer Admittance vs. Drain Current (Typical) Tc = 25°C VDS = 10V Pulse Test 160 120 80 40 0 0 2 4 6 2 Tc = 25°C 102 7 5 4 3 2 75°C 125°C 101 100 2 3 4 5 7 102 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) Tch = 25°C f = 1MHz VGS = 0V 104 7 5 Ciss 3 2 103 7 5 Coss Crss 3 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 103 7 5 4 3 td(off) tf 2 tr 102 7 5 4 3 2 td(on) Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω 101 100 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 100 10 VGS = 0V Pulse Test 8 6 VDS = 10V 20V 4 40V 2 40 80 120 160 Gate Charge Qg (nC) Rev.1.00, Aug.20.2004, page 4 of 6 200 Source Current IS (A) Tch = 25°C ID = 70A 0 0 2 3 4 5 7 101 Drain Current ID (A) 2 Gate-Source Voltage VGS (V) 103 7 VDS = 10V 5 Pulse Test 4 3 Gate-Source Voltage VGS (V) 3 Capacitance (pF) 10 8 Switching Time (ns) Drain Current ID (A) 200 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 80 Tc = 125°C 60 40 75°C 20 25°C 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 4 3 Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS70UMJ-06F VGS = 10V ID = 35A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 Transient Thermal Impedance Zth(ch-c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) 1.4 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Threshold Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics 101 7 5 3 2 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 0.05 10–1 0.02 7 5 0.01 3 Single Pulse 2 PDM tw T D = tw T 10–2 10–4 2 3 5 710–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout RGS 10% 10% 10% VDD 90% td(on) Rev.1.00, Aug.20.2004, page 5 of 6 tr 90% td(off) tf FS70UMJ-06F Package Dimensions TO-220 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms 2.0 Cu alloy 4.5 10.5 7.0 φ 3.6 ± 0.2 1.0 3.8 max 12.5 min 16 max 3.2 ± 0.2 1.3 0.8 2.5 0.5 2.5 2.6 4.5 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Static electricity prevention bag 100 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example FS70UMJ-06F FS70UMJ-06F-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0